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    SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE PROCESSING METHOD
    1.
    发明申请
    SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE PROCESSING METHOD 审中-公开

    公开(公告)号：US20170125255A1

    公开(公告)日：2017-05-04

    申请号：US15310840

    申请日：2015-06-03

    Applicant: Tokyo Electron Limited

    Inventor： Akinobu KAKIMOTO ,  Yoshinobu HAYAKAWA ,  Satoshi MIZUNAGA ,  Yasuhiro HAMADA ,  Mitsuhiro OKADA

    IPC: H01L21/3065 ,  H01L21/308

    Abstract: There is provided a substrate processing system including an etching apparatus configured to supply a gas containing fluorocarbon to generate plasma so as to perform an etching process on a film including silicon formed on a substrate, wherein the etching process is performed by using plasma through a mask formed on the film including silicon, a film forming apparatus configured to supply a gas containing carbon so as to form a film including carbon on the etched film including silicon. The film forming apparatus is provided separately from the etching apparatus, the etching apparatus performing, a first etching step in which the film including silicon is partway etched by using plasma; and a second etching step in which the film including silicon, on which the film including carbon is formed, is further etched by using plasma, the film forming apparatus performing a film forming step in which the film including carbon is formed, without generating plasma, on the film including silicon on which the first etching step has been performed.

    PROCESSING APPARATUS
    3.
    发明申请
    PROCESSING APPARATUS 审中-公开

    公开(公告)号：US20200035497A1

    公开(公告)日：2020-01-30

    申请号：US16596056

    申请日：2019-10-08

    Applicant: Tokyo Electron Limited

    Inventor： Akinobu KAKIMOTO ,  Yoshinobu HAYAKAWA ,  Satoshi MIZUNAGA ,  Yasuhiro HAMADA ,  Mitsuhiro OKADA

    IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/308

    Abstract: A processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) etching a silicon-containing film to a first depth with a first plasma in the chamber, thereby forming a recess in the silicon-containing film; (b) forming a protection film on a side wall of the recess with a second plasma in the chamber, the protection film having a first thickness at an upper portion of the recess and a second thickness at a lower portion of the recess, the second thickness being smaller than the first thickness; and (c) etching the silicon-containing film to a second depth with the third plasma in the chamber, the second depth being greater than the first depth.

    FILM FORMING METHOD AND FILM FORMING APPARATUS
    5.
    发明申请
    FILM FORMING METHOD AND FILM FORMING APPARATUS 有权

    公开(公告)号：US20250154645A1

    公开(公告)日：2025-05-15

    申请号：US18838661

    申请日：2023-02-06

    Applicant: Tokyo Electron Limited

    Inventor： Tadashi MITSUNARI ,  Hiroki ARAI ,  Yuutaro KISHI ,  Yasuhiro HAMADA

    IPC: C23C16/26 ,  C23C16/509 ,  H01J37/32 ,  H01L21/02

    Abstract: A film forming method includes placing a substrate on a substrate placement stage provided inside a processing container, exhausting and depressurizing an inside of the processing container, forming a carbon film on the substrate by generating plasma through application of radio frequency power for plasma generation to the substrate placement stage while supplying a process gas including a carbon-containing gas into the depressurized processing container, and performing plasma processing by applying a negative direct current voltage to a counter electrode facing the substrate placement stage, along with application of the radio frequency power for plasma generation to the substrate placement stage.

    PROCESSING APPARATUS
    6.
    发明申请
    PROCESSING APPARATUS 有权

    公开(公告)号：US20220415660A1

    公开(公告)日：2022-12-29

    申请号：US17902918

    申请日：2022-09-05

    Applicant: Tokyo Electron Limited

    Inventor： Akinobu KAKIMOTO ,  Yoshinobu HAYAKAWA ,  Satoshi MIZUNAGA ,  Yasuhiro HAMADA ,  Mitsuhiro OKADA

    IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/308 ,  H01L21/311 ,  H01L21/67

    Abstract: A processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) etching a silicon-containing film to a first depth with a first plasma in the chamber, thereby forming a recess in the silicon-containing film; (b) forming a protection film on a side wall of the recess with a second plasma in the chamber, the protection film having a first thickness at an upper portion of the recess and a second thickness at a lower portion of the recess, the second thickness being smaller than the first thickness; and (c) etching the silicon-containing film to a second depth with the third plasma in the chamber, the second depth being greater than the first depth.

    WAFER PROCESSING METHOD
    7.
    发明申请
    WAFER PROCESSING METHOD 有权

    公开(公告)号：US20210280419A1

    公开(公告)日：2021-09-09

    申请号：US17190818

    申请日：2021-03-03

    Applicant: Tokyo Electron Limited

    Inventor： Noriaki OKABE ,  Takuya SEINO ,  Ryota KOZUKA ,  Yasuhiro HAMADA ,  Yuutaro KISHI

    IPC: H01L21/033 ,  H01L21/311 ,  H01L21/308

    Abstract: A method of processing a wafer includes preparing a wafer having a substrate and a silicon-containing film formed on the substrate; forming a hard mask on the silicon-containing film; forming a pattern on the hard mask by etching the hard mask; and etching the silicon-containing film using the hard mask on which the pattern is formed, wherein the hard mask has a first film formed on the silicon-containing film and containing tungsten, and a second film formed on the first film and containing zirconium or titanium and oxygen.

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