公开(公告)号：US20250154645A1

公开(公告)日：2025-05-15

申请号：US18838661

申请日：2023-02-06

Applicant: Tokyo Electron Limited

Inventor： Tadashi MITSUNARI ,  Hiroki ARAI ,  Yuutaro KISHI ,  Yasuhiro HAMADA

IPC: C23C16/26 ,  C23C16/509 ,  H01J37/32 ,  H01L21/02

Abstract: A film forming method includes placing a substrate on a substrate placement stage provided inside a processing container, exhausting and depressurizing an inside of the processing container, forming a carbon film on the substrate by generating plasma through application of radio frequency power for plasma generation to the substrate placement stage while supplying a process gas including a carbon-containing gas into the depressurized processing container, and performing plasma processing by applying a negative direct current voltage to a counter electrode facing the substrate placement stage, along with application of the radio frequency power for plasma generation to the substrate placement stage.

公开(公告)号：US20210280419A1

公开(公告)日：2021-09-09

申请号：US17190818

申请日：2021-03-03

Applicant: Tokyo Electron Limited

Inventor： Noriaki OKABE ,  Takuya SEINO ,  Ryota KOZUKA ,  Yasuhiro HAMADA ,  Yuutaro KISHI

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/308

Abstract: A method of processing a wafer includes preparing a wafer having a substrate and a silicon-containing film formed on the substrate; forming a hard mask on the silicon-containing film; forming a pattern on the hard mask by etching the hard mask; and etching the silicon-containing film using the hard mask on which the pattern is formed, wherein the hard mask has a first film formed on the silicon-containing film and containing tungsten, and a second film formed on the first film and containing zirconium or titanium and oxygen.