公开(公告)号：US20210280419A1

公开(公告)日：2021-09-09

申请号：US17190818

申请日：2021-03-03

Applicant: Tokyo Electron Limited

Inventor： Noriaki OKABE ,  Takuya SEINO ,  Ryota KOZUKA ,  Yasuhiro HAMADA ,  Yuutaro KISHI

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/308

Abstract: A method of processing a wafer includes preparing a wafer having a substrate and a silicon-containing film formed on the substrate; forming a hard mask on the silicon-containing film; forming a pattern on the hard mask by etching the hard mask; and etching the silicon-containing film using the hard mask on which the pattern is formed, wherein the hard mask has a first film formed on the silicon-containing film and containing tungsten, and a second film formed on the first film and containing zirconium or titanium and oxygen.

公开(公告)号：US20230178378A1

公开(公告)日：2023-06-08

申请号：US18098112

申请日：2023-01-18

Applicant: Tokyo Electron Limited

Inventor： Noriaki OKABE ,  Naoki SHINDO ,  Gen YOU ,  Takuya SEINO

IPC: H01L21/311 ,  H01L21/67

CPC classification number: H01L21/31116 ,  H01L21/31144 ,  H01L21/67069

Abstract: An etching method includes a preparing step and a removing step. In the preparing step, a substrate is prepared which includes a first film, a second film stacked on the first film, and a hard mask stacked on the second film, such that the second film is etched with the hard mask having a formed pattern as a mask until the first film is exposed. In the removing step, the hard mask is removed using a fluorine-containing gas. Further, the removing step is executed for a time longer than a first time from a start of a supply of the fluorine-containing gas to a start of an etching of the hard mask, and shorter than a second time from the start of the supply of the fluorine-containing gas to a start of an etching of the first film.