公开(公告)号：US20210302846A1

公开(公告)日：2021-09-30

申请号：US17204161

申请日：2021-03-17

Applicant: Tokyo Electron Limited

Inventor： Einosuke TSUDA ,  Daisuke TORIYA ,  Satoshi YONEKURA ,  Satoshi TAKEDA ,  Motoshi FUKUDOME ,  Kyoko IKEDA

IPC: G03F7/20

Abstract: The present invention provides a substrate stage and a substrate processing apparatus that appropriately control a temperature of a staging surface on which a substrate is placed. The substrate stage includes a stage base including a cooling surface therein, and a supply flow path forming member formed of a material having a lower thermal conductivity than that of the stage base and including cooling nozzles configured to spray a coolant toward the cooling surface.

公开(公告)号：US20240052950A1

公开(公告)日：2024-02-15

申请号：US18233243

申请日：2023-08-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi YONEKURA ,  Tamaki TAKEYAMA ,  Tatsuhiko TANIMURA ,  Shigeyuki OKURA

IPC: F16K39/02 ,  G05D16/16

CPC classification number: F16K39/028 ,  G05D16/16

Abstract: An automatic pressure control device that controls a pressure in a processing container to which a source gas for forming a film on a substrate is supplied, includes: a vacuum exhauster configured to vacuum-exhaust a gas in the processing container; an exhaust path connecting the processing container and the vacuum exhauster; and a butterfly valve including an annular valve seat having an inner wall surface and a valve body configured as a plate-shaped body. The valve body is rotatably installed to the valve seat via a shaft and configured to change an opening area of the exhaust path by being arranged to be inclined and changing an inclination angle of the valve body. The butterfly valve is configured to control the pressure in the processing container by changing the inclination angle of the valve body based on a result of detecting the pressure in the processing container.