公开(公告)号：US20160358756A1

公开(公告)日：2016-12-08

申请号：US15171017

申请日：2016-06-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Michitaka AITA ,  Jun YOSHIKAWA ,  Motoshi FUKUDOME

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50

Abstract: Disclosed is a plasma processing apparatus including: a processing container that includes a bottom portion and a sidewall and defines a processing space; a microwave generator that generates microwaves; and a dielectric window attached to the sidewall of the processing container. The dielectric window is supported by a support surface formed in an upper end portion of the sidewall or a support surface formed in a conductor member disposed in the upper end portion of the sidewall, and includes a non-facing portion that does not face the processing space. Corner portions are formed on surfaces of the non-facing portion to fix a position of a node of standing waves. A distance from a sidewall corner portion to at least one of the plurality of corner portions is a distance in which a position of another node of the standing waves overlaps with a position of the sidewall corner portion.

Abstract translation: 公开了一种等离子体处理装置，包括：处理容器，其包括底部和侧壁并限定处理空间; 产生微波的微波发生器; 以及附着在处理容器的侧壁上的电介质窗。 电介质窗口由形成在侧壁的上端部中的支撑表面或形成在设置在侧壁的上端部的导体构件中的支撑表面支撑，并且包括不面向加工的不面对部分 空间。 角部分形成在不面对部分的表面上以固定驻波节点的位置。 从侧壁角部到多个角部中的至少一个的距离是驻波的另一个节点的位置与侧壁角部的位置重叠的距离。

公开(公告)号：US20220270940A1

公开(公告)日：2022-08-25

申请号：US17675225

申请日：2022-02-18

Applicant: Tokyo Electron Limited

Inventor： Shingo HISHIYA ,  Nobutoshi TERASAWA ,  Fumiaki NAGAI ,  Kazuaki SASAKI ,  Hiroaki KIKUCHI ,  Masayuki KITAMURA ,  Kazuo YABE ,  Motoshi FUKUDOME ,  Tatsuya MIYAHARA ,  Eiji KIKAMA ,  Yuki TANABE ,  Tomoyuki NAGATA

IPC: H01L21/66 ,  C23C16/52 ,  C23C16/455 ,  H01L21/02

Abstract: An abnormality detection method includes: supplying a gas controlled to a selected rate to a gas supply pipe via the gas pipe connected to the gas supply pipe, thereby introducing the gas into a reaction region of a processing container provided in a processing apparatus from a gas hole of the gas supply pipe; measuring a pressure inside the gas pipe by a pressure gauge attached to the gas pipe; and detecting an abnormality of at least one of the gas supply pipe and the gas pipe based on the pressure measured at the measuring.

公开(公告)号：US20210302846A1

公开(公告)日：2021-09-30

申请号：US17204161

申请日：2021-03-17

Applicant: Tokyo Electron Limited

Inventor： Einosuke TSUDA ,  Daisuke TORIYA ,  Satoshi YONEKURA ,  Satoshi TAKEDA ,  Motoshi FUKUDOME ,  Kyoko IKEDA

IPC: G03F7/20

Abstract: The present invention provides a substrate stage and a substrate processing apparatus that appropriately control a temperature of a staging surface on which a substrate is placed. The substrate stage includes a stage base including a cooling surface therein, and a supply flow path forming member formed of a material having a lower thermal conductivity than that of the stage base and including cooling nozzles configured to spray a coolant toward the cooling surface.

公开(公告)号：US20150294839A1

公开(公告)日：2015-10-15

申请号：US14681161

申请日：2015-04-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki TAKABA ,  Tetsuya NISHIZUKA ,  Naoki MATSUMOTO ,  Michitaka AITA ,  Takashi MINAKAWA ,  Kazuki TAKAHASHI ,  Jun YOSHIKAWA ,  Motoshi FUKUDOME ,  Naoki MIHARA ,  Hiroyuki KONDO

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/3222

Abstract: Disclosed is a plasma processing apparatus including a processing container, a placing table, a central introduction section, and a peripheral introduction section. The central introduction section is provided above the placing table. The central introduction introduces a gas toward the placing table along the axis passing through a center of the placing table. The peripheral introduction section is provided between the central introduction section and a top surface of the placing table in a height direction. In addition, the peripheral introduction section is formed along a side wall. The peripheral introduction section provides a plurality of gas ejection ports arranged in a circumferential direction with respect to the axis. The plurality of gas ejection ports of the peripheral introduction section extend away from the placing table as the gas ejection ports come close to the axis.

Abstract translation: 公开了一种等离子体处理装置，其包括处理容器，放置台，中央引入部和周边引入部。 中心介绍部分在放置台上方提供。 中心介绍沿着穿过放置台的中心的轴线向放置台引入气体。 周边引入部设置在中心引导部和放置台的上表面之间的高度方向。 另外，周边导入部沿着侧壁形成。 周边引入部分提供沿相对于轴线沿圆周方向布置的多个气体喷射口。 当气体喷射口靠近轴线时，周边引入部分的多个气体喷射口远离放置台延伸。