公开(公告)号：US20230096191A1

公开(公告)日：2023-03-30

申请号：US17947545

申请日：2022-09-19

Applicant: Tokyo Electron Limited

Inventor： Takeshi ITATANI ,  Einosuke TSUDA ,  Tadahiro ISHIZAKA ,  Satoshi TAKEDA

IPC: H01L21/285 ,  C23C16/16 ,  C23C16/54

Abstract: A method of forming a ruthenium film on a substrate by supplying a ruthenium-containing gas includes: forming an adsorption inhibition layer that inhibits adsorption of the ruthenium-containing gas by supplying an adsorption inhibition gas to an end portion and a rear surface of the substrate; transferring the substrate to a chamber; and forming the ruthenium film on the substrate by supplying the ruthenium-containing gas to the chamber.

公开(公告)号：US20210287916A1

公开(公告)日：2021-09-16

申请号：US17198005

申请日：2021-03-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Manabu NAKAGAWASAI ,  Satoshi TAKEDA

IPC: H01L21/48 ,  H01L21/52 ,  H01L21/228

Abstract: A substrate processing device is provided. The substrate processing device includes a processing container including a mounting table, a refrigeration device disposed to have a gap between the mounting table and the refrigeration device, a first elevating device configured to raise or lower the refrigeration device, a refrigerant flow path to supply a refrigerant to the gap, a compression device configured to compress the refrigerant supplied to the refrigerant flow path, and refrigerant transfer pipes connected to both a first connection-fixing unit which is a flow path port of the refrigerant flow path and a second connection-fixing unit fluid-communicating with the compression device. Further, each of the refrigeration transfer pipes extends such that at least a portion of the refrigerant transfer pipe is curved between the first and second connection-fixing units, and each of the refrigerant transfer pipes is placed on a support member at the second connection-fixing unit.

公开(公告)号：US20210302846A1

公开(公告)日：2021-09-30

申请号：US17204161

申请日：2021-03-17

Applicant: Tokyo Electron Limited

Inventor： Einosuke TSUDA ,  Daisuke TORIYA ,  Satoshi YONEKURA ,  Satoshi TAKEDA ,  Motoshi FUKUDOME ,  Kyoko IKEDA

IPC: G03F7/20

Abstract: The present invention provides a substrate stage and a substrate processing apparatus that appropriately control a temperature of a staging surface on which a substrate is placed. The substrate stage includes a stage base including a cooling surface therein, and a supply flow path forming member formed of a material having a lower thermal conductivity than that of the stage base and including cooling nozzles configured to spray a coolant toward the cooling surface.

公开(公告)号：US20210249295A1

公开(公告)日：2021-08-12

申请号：US17172641

申请日：2021-02-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TAKEDA

IPC: H01L21/683 ,  H01L21/67 ,  H01L43/08 ,  H01L43/12 ,  H01J37/34 ,  H01J37/32 ,  C23C14/35 ,  C23C14/50

Abstract: A stage device includes a stage having a copper main body and an electrostatic chuck, a cooling unit disposed below the stage, and a power supply mechanism for supplying power to an attraction electrode of the electrostatic chuck from a DC power supply disposed below the stage. The power supply mechanism includes a pair of terminals disposed at an outer peripheral portion of the stage while being spaced apart from each other, a first power supply line having a pair of metal rods spaced apart from each other while extending toward the stage and being connected to the DC power supply, a second power supply line having a pair of metal rods spaced apart from each other and connected to the terminals, and a connecting unit where the metal rods of the first power supply line and the metal rods of the second power supply line are connected.