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公开(公告)号：US20200095680A1
公开(公告)日：2020-03-26
申请号：US16574977
申请日：2019-09-18
发明人： Kohichi SATOH , Toshiaki FUJISATO , Daisuke TORIYA
IPC分类号： C23C16/458
摘要： A placement apparatus is provided in the present disclosure. The apparatus includes a stage on which a substrate is placed; a support configured to support the stage from a side of a rear surface of the stage that is opposite to a placement surface on which the substrate is placed; a temperature adjustment member including a plate securing the stage from a lower surface of the stage, a shaft extending downwards from the plate, and a hole accommodating the support through the shaft from the plate, and being capable of a temperature adjustment; a heat-insulating member disposed between the stage and the temperature adjustment member; and an abutment member configured to abut the substrate placed on the stage.
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公开(公告)号：US20210005493A1
公开(公告)日：2021-01-07
申请号：US16767480
申请日：2018-10-12
IPC分类号： H01L21/683 , H01L21/67 , C23C16/455 , C23C16/458 , H01L21/285
摘要： When performing processing on a substrate in a plasma-free atmosphere, the substrate is reliably attracted to perform processing with high uniformity in the plane of the substrate. An apparatus includes a DC power source and a processing gas supply part. The DC power source has a positive electrode connected to one of an electrode of an electrostatic chuck and a conductive member, and a negative electrode connected to the other of the electrode and the conductive member, and attracts the substrate to a dielectric layer of the electrostatic chuck by electrostatic attraction force generated by applying voltage between the conductive member located at a processing position and the electrode in a state in which plasma is not formed inside a processing container. The processing gas supply part performs processing by supplying a processing gas to the substrate in a state in which the substrate is attracted to the dielectric layer.
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公开(公告)号：US20200165723A1
公开(公告)日：2020-05-28
申请号：US16698381
申请日：2019-11-27
IPC分类号： C23C16/458 , C23C16/50 , C23C16/455
摘要： A substrate holder according to one embodiment of the present disclosure comprises a stage made of a dielectric material and configured to support a substrate; an attraction electrode provided in the stage and configured to electrostatically attract the substrate; and a heater configured to heat the stage. By applying a DC voltage to the attraction electrode, the substrate is electrostatically attached to a surface of the stage by a Johnsen-Rahbek force. The stage comprises an annular close contact area with which the substrate comes into close contact at a position corresponding to an outer periphery of the substrate on the surface of the stage; and a groove provided in an annular shape in a portion outside the close contact area, and a conductive deposition film formed by the raw material gas is accumulated in the groove.
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公开(公告)号：US20160083837A1
公开(公告)日：2016-03-24
申请号：US14787860
申请日：2014-02-10
IPC分类号： C23C16/44 , C23C16/455 , C23C16/34 , C23C16/458
CPC分类号： C23C16/4408 , C23C16/34 , C23C16/4405 , C23C16/4409 , C23C16/4412 , C23C16/45544 , C23C16/4583 , H01L21/68742 , H01L21/68792
摘要： A film formation device includes: a processing vessel; a mounting stand installed within the processing vessel and configured to mount a substrate thereon; an elevating shaft installed so as to extend in an up-down direction while supporting the mounting stand and connected to an external elevator mechanism through a through-hole formed in the processing vessel; a bellows installed between the processing vessel and the elevator mechanism and configured to cover a periphery of the elevating shaft at a lateral side of the elevating shaft; a lid member disposed so as to surround the elevating shaft with a gap left between a lateral circumferential surface of the elevating shaft and the lid member; and a purge gas supply part configured to supply a purge gas into the bellows so that a gas flow from the bellows toward the processing vessel through the gap is formed.
摘要翻译： 一种成膜装置，包括：处理容器; 安装台，其安装在所述处理容器内并构造成在其上安装基板; 安装成沿着上下方向延伸的升降轴，同时支撑安装台并通过形成在处理容器中的通孔连接到外部升降机构; 安装在处理容器和升降机构之间的波纹管，其构造成在升降轴的侧面覆盖升降轴的周边; 盖构件，其设置成围绕所述升降轴，所述间隙留在所述升降轴的侧向周面和所述盖构件之间; 以及净化气体供给部，其构造成将吹扫气体供给到所述波纹管中，使得形成从所述波纹管到所述处理容器的气体通过所述间隙流动。
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公开(公告)号：US20140130743A1
公开(公告)日：2014-05-15
申请号：US14074302
申请日：2013-11-07
发明人： Daisuke TORIYA , Eiichi KOMORI , Manabu AMIKURA
IPC分类号： H01L21/02
CPC分类号： C23C16/45544 , C23C16/4412 , C23C16/45565 , C23C16/45574 , C23C16/4585 , H01L21/02175 , H01L21/68721
摘要： A film forming apparatus that includes a mounting table for loading a wafer, a encompassing member surrounding the mounting table and dividing an inside of a process container, an exhaust part that vacuum exhausts the process container, a clamp ring loaded upon an upper space of the encompassing member and lifted from the upper space of the encompassing member while contacting an inner circumference part thereof with an outer circumference of the wafer loaded on the mounting table, and a cylindrical wall extended downward from the clamp ring, formed along a circumference of the clamp ring into a cylinder shape, and positioned between an outer circumference surface of the mounting table and an inner circumference surface of the encompassing member.
摘要翻译： 一种成膜装置，包括用于装载晶片的安装台，围绕安装台并分隔处理容器内部的包围构件，真空排出处理容器的排气部分，装载在工作容器的上部空间的夹紧环 包围构件，并且在包围构件的上部空间中被提升，同时使其内周部分与装载在安装台上的晶片的外周接触，并且沿着夹具的圆周形成从夹紧环向下延伸的圆柱形壁 环形成圆柱形，并且定位在安装台的外周表面和包围构件的内圆周表面之间。
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公开(公告)号：US20210302846A1
公开(公告)日：2021-09-30
申请号：US17204161
申请日：2021-03-17
发明人： Einosuke TSUDA , Daisuke TORIYA , Satoshi YONEKURA , Satoshi TAKEDA , Motoshi FUKUDOME , Kyoko IKEDA
IPC分类号： G03F7/20
摘要： The present invention provides a substrate stage and a substrate processing apparatus that appropriately control a temperature of a staging surface on which a substrate is placed. The substrate stage includes a stage base including a cooling surface therein, and a supply flow path forming member formed of a material having a lower thermal conductivity than that of the stage base and including cooling nozzles configured to spray a coolant toward the cooling surface.
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7.发明申请公开(公告)号：US20200248306A1
公开(公告)日：2020-08-06
申请号：US16775520
申请日：2020-01-29
发明人： Daisuke TORIYA , Yuichi FURUYA , Toshiaki FUJISATO
IPC分类号： C23C16/44 , C23C16/458 , C23C16/46
摘要： A method of controlling a substrate processing apparatus that includes a stage, an annular member, a gas introduction mechanism, an exhaust part and a heat transfer gas introduction supply/exhaust part, the method including: mounting a substrate on the stage, and mounting the annular member on the substrate to press the substrate; creating a pressure of a heat transfer gas to be supplied into a space formed between a rear surface of the substrate and a front surface of the stage using the heat transfer gas supply/exhaust part; supplying the heat transfer gas into the space from the heat transfer gas supply/exhaust part; introducing the gas from the gas introduction mechanism into a container; exhausting the heat transfer gas from the space through an orifice; subsequently, exhausting the heat transfer gas from the space; and removing the annular member from the substrate.
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公开(公告)号：US20200010956A1
公开(公告)日：2020-01-09
申请号：US16456794
申请日：2019-06-28
发明人： Daisuke TORIYA , Toshiaki FUJISATO , Yuichi FURUYA
IPC分类号： C23C16/46 , C23C16/44 , C23C16/448 , H01L21/687
摘要： There is provided a film-forming apparatus including: a processing container, wherein a reaction gas is supplied into the processing container; a stage disposed inside the processing container and provided with a substrate heating part, the stage being configured to place a substrate thereon; a support member configured to support the stage from a rear surface of the stage, wherein the rear surface faces a placement surface on which the substrate is placed; a temperature control member disposed on the rear surface of the stage and including a hollow portion formed to cover the support member, the temperature control member configured to have a controllable temperature; a heat-insulating member disposed between the stage and the temperature control member; and a purge gas supply part configured to supply a purge gas to a first gap formed between the support member and the temperature control member.
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公开(公告)号：US20180171478A1
公开(公告)日：2018-06-21
申请号：US15843551
申请日：2017-12-15
发明人： Takashi KAKEGAWA , Yuichi FURUYA , Daisuke TORIYA
IPC分类号： C23C16/455 , H01L21/285 , C23C16/06
CPC分类号： C23C16/45544 , C23C16/06 , C23C16/45565 , C23C16/45574 , H01L21/28568 , H01L21/68742
摘要： A gas treatment apparatus includes: a mounting part of a substrate; a gas diffusion plate of a processing gas; gas dispersion parts forming a diffusion space of the processing gas between the gas dispersion parts and the gas diffusion plate; and a flow path having an upstream side forming a common flow path of the gas dispersion parts and a downstream side connected to each of the gas dispersion parts, lengths from the common flow path to respective of the gas dispersion parts being aligned, wherein centers of the gas dispersion parts are located around a central portion of the diffusion space, and the gas dispersion parts are arranged along first circles with two or more of the gas dispersion parts arranged on each of the first circles and distances from the central portion of the diffusion space to the centers of gas dispersion parts being different from one another.
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公开(公告)号：US20160355928A1
公开(公告)日：2016-12-08
申请号：US15243048
申请日：2016-08-22
发明人： Daisuke TORIYA , Eiichi KOMORI , Manabu AMIKURA
IPC分类号： C23C16/455 , H01L21/687 , H01L21/02 , C23C16/44 , C23C16/458
CPC分类号： C23C16/45544 , C23C16/4412 , C23C16/45565 , C23C16/45574 , C23C16/4585 , H01L21/02175 , H01L21/68721
摘要： A film forming apparatus includes: a mounting table that is lifted/lowered between a processing location and a delivery location below the processing location; an encompassing member for encompassing the mounting table positioned at the processing location and to divide an inside of a processing container into a processing space of an upper space and a space of a lower side; an exhaust part for evacuating the inside of the processing container through the processing space; a purge gas supply unit configured to supply a purge gas to the lower side space; a clamp ring stacked on an upper surface of the encompassing member when the mounting table is positioned at the delivery location; and a guiding part formed at the encompassing member to be extended between an upper side of the mounting table and a lower side of the clamp ring and to guide a flow of the purge gas.
摘要翻译： 一种成膜设备包括：安装台，其在处理位置和处理位置下方的传送位置之间升降; 用于包围位于处理位置处的安装台并将处理容器的内部分成上侧空间和下侧空间的处理空间的包围构件; 排气部，其通过处理空间排出处理容器的内部; 净化气体供给单元，其构造成向下侧空间供给净化气体; 夹紧环，当所述安装台位于所述传送位置时，堆叠在所述包围构件的上表面上; 以及形成在所述封闭构件上以在所述安装台的上侧和所述夹紧环的下侧之间延伸并且引导所述吹扫气体的流动的引导部。
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