公开(公告)号：US09425074B2

公开(公告)日：2016-08-23

申请号：US13922450

申请日：2013-06-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinji Asari ,  Hidekazu Sato ,  Tomohiro Shiobara

IPC: F26B19/00 ,  H01L21/67

CPC classification number: H01L21/67109

Abstract: A heat treatment apparatus performs a heat treatment on a plurality of target objects held by a holding unit while allowing an inert gas to flow upwardly in a vertical processing container with at least one heating unit provided in the vicinity of the processing container. The heat treatment apparatus includes: a main temperature control unit configured to control the heating unit; an inert gas passage through which the inert gas flows into the processing container; an inert gas heating unit installed in the inert gas passage and configured to heat the inert gas; a first temperature measuring unit installed in the inert gas heating unit; and a temperature controller configured to control the inert gas heating unit based on temperatures measured by the first temperature measuring unit.

Abstract translation: 热处理装置对由保持单元保持的多个目标物体进行热处理，同时允许惰性气体在垂直处理容器中向上流动，其中至少一个加热单元设置在处理容器附近。 热处理装置包括：主温度控制单元，被配置为控制加热单元; 惰性气体通道，惰性气体通过其流入处理容器; 惰性气体加热单元，安装在惰性气体通道中并构造成加热惰性气体; 安装在惰性气体加热单元中的第一温度测量单元; 以及温度控制器，其被配置为基于由所述第一温度测量单元测量的温度来控制所述惰性气体加热单元。

公开(公告)号：US12051566B2

公开(公告)日：2024-07-30

申请号：US17648436

申请日：2022-01-20

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Hiroyuki Kikuchi ,  Shinji Asari ,  Yuji Sawada

IPC: H01J37/32 ,  C23C16/50 ,  H01L21/687 ,  C23C16/458 ,  H01L21/02

CPC classification number: H01J37/32422 ,  C23C16/50 ,  H01J37/32082 ,  H01J37/32715 ,  H01L21/68771 ,  C23C16/4584 ,  H01J37/3211 ,  H01J37/3244 ,  H01J2237/20214 ,  H01J2237/332 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/68764

Abstract: A plasma processing apparatus includes a process chamber. A turntable is disposed in the process chamber and is configured to receive a substrate along a circumferential direction thereof. A process gas supply nozzle is configured to supply a process gas to the turntable. A plasma antenna is disposed on the process chamber at a position covering at least a part of the process gas supply nozzle. An ion trap plate is disposed over the process gas supply nozzle at a position overlapping at least a part of the plasma antenna in the process chamber.

公开(公告)号：US10096504B2

公开(公告)日：2018-10-09

申请号：US14247371

申请日：2014-04-08

Applicant: Tokyo Electron Limited

Inventor： Katsuhiko Oyama ,  Yasushi Takeuchi ,  Shinji Asari

IPC: H01L21/677 ,  H01L21/673

Abstract: A method for managing an atmosphere in a storage container in a processing apparatus including a substrate transfer region and a container transfer region which are partitioned by a partition wall; a load port; a container keeping rack; and a cover opening/closing mechanism, includes substituting the internal atmosphere of the storage container that stores non-processed substrates with the inert gas for using the cover opening/closing mechanism; transferring the storage container of which the internal atmosphere has been substituted with the inert gas, to the container keeping rack and placing and keeping the storage container on the container keeping rack; and putting the storage container on standby on the container keeping rack while maintaining the atmosphere substituted with the inert gas.