SUBSTRATE PROCESSING APPARATUS
    1.
    发明公开

    公开(公告)号:US20230317422A1

    公开(公告)日:2023-10-05

    申请号:US18129437

    申请日:2023-03-31

    CPC classification number: H01J37/32449 H01J37/32724 H01J2237/002

    Abstract: A substrate processing apparatus comprising a plasma processing chamber having a substrate support therein which supports a substrate. A shower head faces the substrate support and includes a shower plate formed with a plurality of gas introduction ports through each of which a gas is discharged. A cooling plate holds the shower plate and is formed with a coolant passage through which a coolant is supplied. A plurality of gas diffusion chambers are formed between the shower plate and the cooling plate, and each of the plurality of gas diffusion chambers communicates with each of a plurality of gas supply flow paths and one or more of the plurality of gas introduction ports, respectively. At least a part of the coolant passage is disposed above a heat transfer surface between the shower plate and the cooling plate, in a plan view.

    UPPER ELECTRODE AND PLASMA PROCESSING APPARATUS

    公开(公告)号:US20230298864A1

    公开(公告)日:2023-09-21

    申请号:US18120050

    申请日:2023-03-10

    CPC classification number: H01J37/32541 H01J37/32568 H01J37/32091

    Abstract: An upper electrode disclosed forms a shower head in a capacitively-coupled plasma processing apparatus. The upper electrode includes a first member, a second member, and a third member. The first member is formed of a conductor. The first member provides a first gas hole. The first gas hole penetrates the first member. The second member is formed of a conductor. The second member is provided on the first member. The second member provides a second gas hole. The third member is formed of a dielectric. The third member is provided between the first member and the second member. The third member defines the gas diffusion chamber. The first gas hole and the second gas hole are connected to the gas diffusion chamber.

    SUBSTRATE PROCESSING APPARATUS
    3.
    发明公开

    公开(公告)号:US20230268164A1

    公开(公告)日:2023-08-24

    申请号:US18113862

    申请日:2023-02-24

    CPC classification number: H01J37/32449 C23C16/45565

    Abstract: There is provided a substrate processing apparatus including: a processing chamber; a substrate support that is disposed in the processing chamber and holds a substrate; and a shower head facing the substrate support, the shower head including a shower plate formed with a gas flow path through which a gas is discharged, and a cooling plate holding and cooling the shower plate, and the cooling plate including a first plate having a gas distribution layer through which the gas is distributed, a second plate having a coolant passage through which a coolant is supplied and a gas diffusion space into which the gas distributed by the gas distribution layer is supplied, and a fastening member fastening the first plate and the second plate.

    TEMPERATURE MEASUREMENT DEVICE, LIGHT EMITTING MODULE AND TEMPERATURE MEASUREMENT METHOD

    公开(公告)号:US20170176264A1

    公开(公告)日:2017-06-22

    申请号:US15115989

    申请日:2015-02-25

    CPC classification number: G01K11/12 G01K11/32 G01K15/005

    Abstract: A temperature measurement device includes a light emitting part including a first light source configured to output measurement light with a first wavelength and a second light source configured to output reference light with a second wavelength, a light receiving part configured to receive reflected light of the measurement light and reflected light of the reference light that have passed through a temperature sensing device that changes light transmission characteristics with changes in temperature, a control part configured to measure a temperature detected by the temperature sensing device based on an amount of light of the received reflected light of the measurement light and an amount of light of the received reflected light of the reference light, and a temperature adjustment part configured to separately adjust the temperature of the first light source and the temperature of the second light source.

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