公开(公告)号：US20240207882A1

公开(公告)日：2024-06-27

申请号：US18419592

申请日：2024-01-23

Applicant: Tokyo Electron Limited

Inventor： Takayuki ISHII ,  Kazuya NAGASEKI ,  Michishige SAITO

IPC: B05C5/02 ,  B05C11/10 ,  B05C17/005 ,  C23C14/00 ,  C23C16/455

CPC classification number: B05C5/02 ,  B05C11/1013 ,  B05C17/00536 ,  C23C14/0042 ,  C23C14/0063 ,  C23C16/45557

Abstract: A film forming apparatus is disclosed. The apparatus comprises a chamber; an exhaust unit configured to reduce the pressure in the chamber to a predetermined vacuum level; a holder disposed in the chamber and configured to hold a film forming target member on which a film is to be formed; a supply unit configured to supply a film forming material containing silicon to a surface of the film forming target member; and a heat source configured to perform heating at the predetermined vacuum level to melt the supplied film forming material.

公开(公告)号：US20220062943A1

公开(公告)日：2022-03-03

申请号：US17458691

申请日：2021-08-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki ISHII ,  Kazuya NAGASEKI ,  Michishige SAITO

IPC: B05C5/02 ,  B05C11/10 ,  B05C17/005

Abstract: A film forming apparatus is disclosed. The apparatus comprises a chamber; an exhaust unit configured to reduce the pressure in the chamber to a predetermined vacuum level; a holder disposed in the chamber and configured to hold a film forming target member on which a film is to be formed; a supply unit configured to supply a film forming material containing silicon to a surface of the film forming target member; and a heat source configured to perform heating at the predetermined vacuum level to melt the supplied film forming material.

公开(公告)号：US20210391153A1

公开(公告)日：2021-12-16

申请号：US17337696

申请日：2021-06-03

Applicant: Tokyo Electron Limited

Inventor： Takayuki ISHII ,  Kazuya NAGASEKI ,  Michishige SAITO

IPC: H01J37/32 ,  H01L21/687

Abstract: A stage includes a first member made of a material having a density of 5.0 g/cm3 or less, and a second member joined to the first member. The second member is made of a material having a linear expansion coefficient of 5.0×10−6/K or less and a thermal conductivity of 100 W/mK or more. A flow passage for a temperature control medium is formed in at least one of the first member and the second member.

公开(公告)号：US20210366697A1

公开(公告)日：2021-11-25

申请号：US16646277

申请日：2019-05-10

Applicant: Tokyo Electron Limited

Inventor： Michishige SAITO ,  Kazuya NAGASEKI ,  Shota KANEKO

IPC: H01J37/32

Abstract: A forming method of a component used in a plasma processing apparatus includes irradiating an energy beam to a source material of the component while supplying the source material based on a surface state of the component.

公开(公告)号：US20230061699A1

公开(公告)日：2023-03-02

申请号：US17983128

申请日：2022-11-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Michishige SAITO

IPC: H01J37/32 ,  C23C4/11 ,  C23C4/04 ,  C23C4/12

Abstract: In an exemplary embodiment, an upper electrode is disposed in a processing chamber to face a susceptor and provided with a plate-like member and an electrode part. In an exemplary embodiment, the plate-like member is formed with a gas distribution hole that distributes a processing gas used for a plasma processing. The electrode part is formed in a film shape by thermally spraying silicon onto a surface of the plate-like member where an outlet of the gas distribution hole is formed.

公开(公告)号：US20200312623A1

公开(公告)日：2020-10-01

申请号：US16834612

申请日：2020-03-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki MOYAMA ,  Kazuya NAGASEKI ,  Shinji HIMORI ,  Michishige SAITO ,  Gen TAMAMUSHI

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/67 ,  C23C16/455

Abstract: A substrate processing apparatus includes a processing chamber that accommodates a substrate, a gas supply having a gas diffusion chamber and a plurality of gas holes that communicates the gas diffusion chamber with the processing chamber, a gas inlet tube that introduces a gas into the gas diffusion chamber of the gas supply, and a gas source connected to the gas inlet tube and supplies the gas to the gas inlet tube. The gas supply has a volume variable device for changing a volume in the gas diffusion chamber.

公开(公告)号：US20200211823A1

公开(公告)日：2020-07-02

申请号：US16728203

申请日：2019-12-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryuji HISATOMI ,  Chishio KOSHIMIZU ,  Michishige SAITO

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a processing container; an electrode that places a substrate thereon within the processing container; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies bias power to the electrode; a part exposed to the plasma in the processing container; a DC power supply that supplies a DC voltage to the part; a controller that executes a process including a first control procedure in which a first state in which the DC voltage has a first voltage value and a second state in which the DC voltage has a second voltage value higher than the first voltage value are periodically repeated, and the first voltage value is applied in a partial period in each cycle of a potential of the electrode, and the second voltage value is applied such that the first state and the second state are continuous.

公开(公告)号：US20220310367A1

公开(公告)日：2022-09-29

申请号：US17701744

申请日：2022-03-23

Applicant: Tokyo Electron Limited

Inventor： Michishige SAITO

IPC: H01J37/32 ,  H01J37/20

Abstract: There is provided a substrate support comprising: a base; a first flow path that opens on a bottom surface of the base at a central portion of the base; a second flow path that surrounds the first flow path and opens on the bottom surface of the base; at least one third flow path communicating with the first flow path and arranged from the central portion toward an outer peripheral portion of the base; and at least one fourth flow path communicating with the second flow path, arranged from the central portion toward the outer peripheral portion of the base, and communicating with the at least one third flow path at the outer peripheral portion of the base.

公开(公告)号：US20220076921A1

公开(公告)日：2022-03-10

申请号：US17531348

申请日：2021-11-19

Applicant: Tokyo Electron Limited

Inventor： Ryuji HISATOMI ,  Chishio KOSHIMIZU ,  Michishige SAITO

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a processing container; an electrode that places a substrate thereon within the processing container; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies bias power to the electrode; a part exposed to the plasma in the processing container; a DC power supply that supplies a DC voltage to the part; a controller that executes a process including a first control procedure in which a first state in which the DC voltage has a first voltage value and a second state in which the DC voltage has a second voltage value higher than the first voltage value are periodically repeated, and the first voltage value is applied in a partial period in each cycle of a potential of the electrode, and the second voltage value is applied such that the first state and the second state are continuous.

公开(公告)号：US20210398782A1

公开(公告)日：2021-12-23

申请号：US17348999

申请日：2021-06-16

Applicant: Tokyo Electron Limited

Inventor： Michishige SAITO ,  Yousuke NAGAHATA

IPC: H01J37/32

Abstract: A high frequency power supply member for supplying high frequency power includes: an inner conductor that forms a hollow; and an outer conductor arranged to surround the inner conductor, wherein a refrigerant flow path is provided inside a wall surface of at least one of the inner conductor and the outer conductor.