公开(公告)号：US11456180B2

公开(公告)日：2022-09-27

申请号：US16930483

申请日：2020-07-16

Applicant: Tokyo Electron Limited

Inventor： Takahiro Yokoyama ,  Maju Tomura ,  Yoshihide Kihara ,  Ryutaro Suda ,  Takatoshi Orui

IPC: H01L21/3065 ,  H01L21/02 ,  H01J37/32

Abstract: An etching method of an exemplary embodiment involves providing a substrate in a chamber of a plasma treatment system. The substrate includes a silicon-containing film. The method further involves etching the silicon-containing film by a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen gas component and phosphorous gas component.

公开(公告)号：US11600501B2

公开(公告)日：2023-03-07

申请号：US17090991

申请日：2020-11-06

Applicant: Tokyo Electron Limited

Inventor： Takahiro Yokoyama ,  Maju Tomura ,  Yoshihide Kihara ,  Ryutaro Suda ,  Takatoshi Orui

IPC: H01L21/67 ,  C23C16/02 ,  H01J37/32

Abstract: An etching method enables plasma etching of a silicon-containing film with reduced lateral etching. The etching method includes providing a substrate in a chamber included in a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method further includes setting a flow rate proportion of a phosphorus-containing gas with respect to a total flow rate of the process gas so as to establish a predetermined ratio of an etching rate of an alternate stack of a silicon oxide film and a silicon nitride film to an etching rate of the silicon oxide film.

公开(公告)号：US20230307242A1

公开(公告)日：2023-09-28

申请号：US17704372

申请日：2022-03-25

Applicant: Tokyo Electron Limited

Inventor： Yu-Hao Tsai ,  Du Zhang ,  Mingmei Wang ,  Takatoshi Orui ,  Motoi Takahashi ,  Masahiko Yokoi ,  Koki Tanaka ,  Yoshihide Kihara

IPC: H01L21/3065

CPC classification number: H01L21/3065

Abstract: A method of processing a substrate includes patterning a mask over a dielectric layer and etching openings in the dielectric layer. The dielectric layer is disposed over the substrate. The etching includes flowing an etchant, a polar or H-containing gas, and a phosphorus-halide gas. The method may further include forming contacts by filling the openings with a conductive material.

公开(公告)号：US11551937B2

公开(公告)日：2023-01-10

申请号：US17666570

申请日：2022-02-08

Applicant: Tokyo Electron Limited

Inventor： Takahiro Yokoyama ,  Maju Tomura ,  Yoshihide Kihara ,  Ryutaro Suda ,  Takatoshi Orui

IPC: H01L21/3213 ,  H01L21/3065 ,  H01L21/311

Abstract: An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component.

公开(公告)号：US20250046603A1

公开(公告)日：2025-02-06

申请号：US18362150

申请日：2023-07-31

Applicant: Tokyo Electron Limited

Inventor： Du Zhang ,  Koki Mukaiyama ,  Takatoshi Orui ,  Tomohiko Niizeki ,  Maju Tomura ,  Yoshihide Kihara ,  Mingmei Wang

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/308

Abstract: A method for processing a substrate that includes: forming a passivation layer over sidewalls of a recess in a carbon-containing layer over a substrate by a cyclic passivation process including a plurality of cycles, each of the plurality of cycles including, exposing the substrate to a first gas including a refractory metal in the absence of a plasma, and after exposing to the first gas, exposing the substrate to a second gas including oxygen or nitrogen.

公开(公告)号：US12142484B2

公开(公告)日：2024-11-12

申请号：US18113078

申请日：2023-02-23

Applicant: Tokyo Electron Limited

Inventor： Takahiro Yokoyama ,  Maju Tomura ,  Yoshihide Kihara ,  Ryutaro Suda ,  Takatoshi Orui

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component.

公开(公告)号：US12198938B2

公开(公告)日：2025-01-14

申请号：US17517723

申请日：2021-11-03

Applicant: Tokyo Electron Limited

Inventor： Takatoshi Orui ,  Ryutaro Suda ,  Maju Tomura ,  Yoshihide Kihara

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3065

Abstract: An etching method that is disclosed includes providing a substrate into a chamber. The substrate has a silicon-containing film including a silicon nitride film. The etching method includes generating plasma from a processing gas in the chamber to etch the silicon-containing film. The processing gas includes a fluorine-containing gas and a boron-containing gas. In the etching, a temperature of a substrate support supporting the substrate is set to a temperature of less than 0° C.

公开(公告)号：US11615964B2

公开(公告)日：2023-03-28

申请号：US17692227

申请日：2022-03-11

Applicant: Tokyo Electron Limited

Inventor： Takahiro Yokoyama ,  Maju Tomura ,  Yoshihide Kihara ,  Ryutaro Suda ,  Takatoshi Orui

IPC: H01L21/3213 ,  H01L21/3065 ,  H01L21/311

Abstract: An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component.

公开(公告)号：US11417530B2

公开(公告)日：2022-08-16

申请号：US16930483

申请日：2020-07-16

Applicant: Tokyo Electron Limited

Inventor： Takahiro Yokoyama ,  Maju Tomura ,  Yoshihide Kihara ,  Ryutaro Suda ,  Takatoshi Orui

IPC: H01L21/3065 ,  H01L21/02 ,  H01J37/32

Abstract: An etching method of an exemplary embodiment involves providing a substrate in a chamber of a plasma treatment system. The substrate includes a silicon-containing film. The method further involves etching the silicon-containing film by a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen gas component and phosphorous gas component.