公开(公告)号：US11637020B2

公开(公告)日：2023-04-25

申请号：US17398601

申请日：2021-08-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koki Tanaka

IPC: H01L21/311 ,  H01L21/3213 ,  H01J37/32

Abstract: An etching method includes: (a) providing a substrate that contains silicon, on a support; (b) etching the substrate with plasma generated from a first gas that includes a fluorine-containing gas, to form an etching shape having a bottom; (c) generating plasma from a second gas that includes a hydrogen fluoride (HF) gas, to selectively form a condensed or solidified layer of HF at the bottom of the etching shape; and (d) etching the bottom with the plasma generated from the second gas, by supplying a bias power to the support. During (c) and (d), a temperature of the substrate is maintained to be 0° C. or lower.

公开(公告)号：US12072693B2

公开(公告)日：2024-08-27

申请号：US17193026

申请日：2021-03-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koki Tanaka ,  Ryu Nagai

IPC: G06T7/00 ,  G05B23/02 ,  G06N20/00

CPC classification number: G05B23/0221 ,  G06N20/00 ,  G06T7/0008 ,  G06T2207/10036 ,  G06T2207/30148

Abstract: An analysis device includes learning circuitry configured to perform machine learning using a time series data group measured in association with a processing of an object in a processing space and to calculate a value indicating a relationship of time series data in a corresponding time range between respective measurement items and evaluation circuitry configured to evaluate an unknown condition of the processing space based on the value indicating the relationship calculated by performing machine learning by the learning circuitry using a time series data group measured in association with a processing of the object under a known condition of the processing space.

公开(公告)号：US20230100292A1

公开(公告)日：2023-03-30

申请号：US17955073

申请日：2022-09-28

Applicant: Tokyo Electron Limited

Inventor： KYURI MOTOKAWA ,  Yuya Minoura ,  Muneyuki Omi ,  Koki Tanaka ,  Ryu Nagai ,  Nobuhiko Shirahama

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/67

Abstract: A plasma processing method includes (a) forming a first protective film on a surface of an inner member of a chamber by a first processing gas including a precursor gas that does not contain halogen; and (b) performing plasma processing on a processing target that is carried in inside the chamber by a plasma of a second processing gas after the first protective film is formed on the surface of the member.

公开(公告)号：US20230307242A1

公开(公告)日：2023-09-28

申请号：US17704372

申请日：2022-03-25

Applicant: Tokyo Electron Limited

Inventor： Yu-Hao Tsai ,  Du Zhang ,  Mingmei Wang ,  Takatoshi Orui ,  Motoi Takahashi ,  Masahiko Yokoi ,  Koki Tanaka ,  Yoshihide Kihara

IPC: H01L21/3065

CPC classification number: H01L21/3065

Abstract: A method of processing a substrate includes patterning a mask over a dielectric layer and etching openings in the dielectric layer. The dielectric layer is disposed over the substrate. The etching includes flowing an etchant, a polar or H-containing gas, and a phosphorus-halide gas. The method may further include forming contacts by filling the openings with a conductive material.

公开(公告)号：US20230245897A1

公开(公告)日：2023-08-03

申请号：US18129628

申请日：2023-03-31

Applicant: Tokyo Electron Limited

Inventor： Koki Tanaka

IPC: H01L21/311 ,  H01L21/3213 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32724 ,  H01J37/32743 ,  H01L21/32137 ,  H01J37/32082 ,  H01J2237/334

Abstract: A plasma etching apparatus includes: a chamber; a support configured to support a substrate in the chamber; a gas supply configured to supply a processing gas into the chamber, the processing gas including hydrogen fluoride gas with a volume flow ratio of 30% or more with respect to a total flow rate of the processing gas; a plasma generator configured to generate a plasma from the processing gas in the chamber to etch the substrate with the plasma; and a cooler configured to maintain the support at 0° C. or lower during generation of the plasma.

公开(公告)号：US11127600B2

公开(公告)日：2021-09-21

申请号：US16793344

申请日：2020-02-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koki Tanaka ,  Maju Tomura

IPC: H01L21/3213 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/311

Abstract: An etching method includes: providing a substrate including a silicon oxide film on a stage; controlling a surface temperature of the substrate to be −70° C. or lower; and etching the silicon oxide film with plasma generated by supplying a radio-frequency power to a gas containing fluorine and hydrogen, after the controlling the surface temperature of the substrate; and increasing the surface temperature of the substrate to volatilize a by-product generated by the etching.