公开(公告)号：US20230386787A1

公开(公告)日：2023-11-30

申请号：US18032786

申请日：2021-10-05

Applicant: Tokyo Electron Limited

Inventor： Atsutoshi INOKUCHI ,  Yasuhiko SAITO ,  Kiyoshi MAEDA

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01J37/32137 ,  H01L21/3065 ,  H01L21/308 ,  H01J37/3244 ,  H01J37/32091 ,  H01J37/321 ,  H01J2237/334

Abstract: A substrate processing method for a substrate processing device includes (a) supplying a process gas with specific conditions to a processing container having therein a stage on which a workpiece having an etching target film and a mask on the etching target film is placed, (b) performing a plasma processing on the workpiece with first plasma generated from the process gas under a first plasma generation condition, (c) performing a plasma processing on the workpiece with second plasma generated from the process gas under a second plasma generation condition that is different from the first plasma generation condition in a radio-frequency power condition and a processing time, and is the same as the first plasma generation condition in other conditions, and (d) repeating (b) and (c).

公开(公告)号：US20170069473A1

公开(公告)日：2017-03-09

申请号：US15255409

申请日：2016-09-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuhiko SAITO ,  Takenao NEMOTO

IPC: H01J37/32 ,  C23C16/02 ,  H01L43/10 ,  C23C16/44 ,  H01L43/12 ,  H01L43/08 ,  C23C16/50 ,  C23C16/34

Abstract: A method includes performing an etching process in a first process module, moving a workpiece formed by the etching process from the first process module to a second process module, and performing a film forming process on the workpiece in the second process module. In the performing the film forming process, an insulating film is formed on a first surface and a second surface of a laminated portion by plasma of a processing gas that contains hydrogen. In the performing the film forming process, an internal pressure of the second process module is 200 mTorr or more, and a hydrogen partial pressure of the second process module is 15 mTorr or less. The performing the etching process, the moving the workpiece, and the performing the film forming process are consistently performed in a state where oxygen is exhausted.

Abstract translation: 一种方法包括在第一处理模块中执行蚀刻处理，将通过蚀刻工艺形成的工件从第一处理模块移动到第二处理模块，以及在第二处理模块中对工件执行成膜处理。 在进行成膜工艺中，通过含有氢的处理气体的等离子体，在层压部分的第一表面和第二表面上形成绝缘膜。 在进行成膜处理时，第二处理组件的内部压力为200mTorr以上，第二处理模块的氢分压为15mTorr以下。 执行蚀刻工艺，移动工件和执行成膜工艺在氧气排出的状态下始终如一地执行。