公开(公告)号：US20210066048A1

公开(公告)日：2021-03-04

申请号：US17003577

申请日：2020-08-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohei MIZOTA ,  Shin OKAMOTO ,  Atsutoshi INOKUCHI

IPC: H01J37/32 ,  H01J37/16 ,  H05H1/46

Abstract: An apparatus for plasma processing that performs an etching on a workpiece, includes: a container; a gas supply system for supplying a processing gas into the container; a plasma source for exciting the processing gas; a support for holding the workpiece inside the container; an exhaust system for exhausting an internal space of the container; electrode plates provided on an inner wall of the container; insulators for electrically insulating the electrode plates from each other; a DC power supply for independently applying a DC voltage to each of the electrode plates; and a controller for controlling the gas supply system, the plasma source, and the DC power supply. The controller controls the gas supply system, the plasma source, and the DC power supply such that the DC voltage is supplied to each electrode plate during execution of the etching or after completion of the etching.

公开(公告)号：US20140099734A1

公开(公告)日：2014-04-10

申请号：US14041004

申请日：2013-09-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehisa SAITO ,  Atsutoshi INOKUCHI ,  Shogo MASUDA

IPC: H01L21/02 ,  C23C16/511

CPC classification number: H01L21/0226 ,  C23C16/045 ,  C23C16/345 ,  C23C16/511 ,  C23C16/56 ,  H01J37/32192 ,  H01J37/32238 ,  H01J37/32449 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02329

Abstract: Disclosed is a method for depositing an insulating film with a high coverage through a low temperature process. The deposition method deposits an insulating film on a substrate using a deposition apparatus which includes a processing container that defines a processing space in which plasma is generated, a gas supply unit configured to supply a gas into the processing space, and a plasma generating unit configured to generate plasma by supplying microwave into the processing container. The deposition method includes depositing an insulating film that includes SiN on the substrate by supplying into a gas formed by adding H2 to trisilylamine into the processing container and generating plasma.

Abstract translation: 公开了一种通过低温工艺沉积具有高覆盖度的绝缘膜的方法。 沉积方法使用包括限定产生等离子体的处理空间的处理容器的沉积装置将衬底上的绝缘膜沉积在被配置为向处理空间供给气体的气体供给单元以及配置在等离子体产生单元中的等离子体生成单元 通过向处理容器提供微波来产生等离子体。 沉积方法包括通过将通过将H 2加入到三甲胺中而形成的气体加入到处理容器中并产生等离子体，在衬底上沉积包括SiN的绝缘膜。

公开(公告)号：US20230386787A1

公开(公告)日：2023-11-30

申请号：US18032786

申请日：2021-10-05

Applicant: Tokyo Electron Limited

Inventor： Atsutoshi INOKUCHI ,  Yasuhiko SAITO ,  Kiyoshi MAEDA

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01J37/32137 ,  H01L21/3065 ,  H01L21/308 ,  H01J37/3244 ,  H01J37/32091 ,  H01J37/321 ,  H01J2237/334

Abstract: A substrate processing method for a substrate processing device includes (a) supplying a process gas with specific conditions to a processing container having therein a stage on which a workpiece having an etching target film and a mask on the etching target film is placed, (b) performing a plasma processing on the workpiece with first plasma generated from the process gas under a first plasma generation condition, (c) performing a plasma processing on the workpiece with second plasma generated from the process gas under a second plasma generation condition that is different from the first plasma generation condition in a radio-frequency power condition and a processing time, and is the same as the first plasma generation condition in other conditions, and (d) repeating (b) and (c).

公开(公告)号：US20150069674A1

公开(公告)日：2015-03-12

申请号：US14542793

申请日：2014-11-17

Applicant: TOKYO ELECTRON LIMITED ,  NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY

Inventor： Masahiro OKESAKU ,  Tadahiro OHMI ,  Tetsuya GOTO ,  Takaaki MATSUOKA ,  Toshihisa NOZAWA ,  Atsutoshi INOKUCHI ,  Kiyotaka ISHIBASHI

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  C23C16/45565 ,  C23C16/45568 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/3255

Abstract: A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

Abstract translation: 喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。 具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结 并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。