公开(公告)号：US20150144622A1

公开(公告)日：2015-05-28

申请号：US14550065

申请日：2014-11-21

Applicant: Tokyo Electron Limited

Inventor： Seokhyoung HONG ,  Taichi MONDEN ,  Yoshihiro MIYAGAWA ,  Masaki KOIZUMI

IPC: H05B6/80 ,  H01L21/67 ,  H05B6/64

Abstract: A microwave heat treatment apparatus includes: a processing vessel configured to accommodate a substrate therein; a support member configured to rotatably support the substrate in the processing vessel; a microwave introduction device configured to generate a microwave for processing the substrate and introduce the microwave into the processing vessel; a first cooling gas introduction part installed to face a main surface of the substrate supported by the support member, the main surface being a target to be processed; a second cooling gas introduction part installed in a lateral side of the substrate supported by the support member; and a control unit configured to independently control the introduction of a cooling gas from the first cooling gas introduction part and the introduction of the cooling gas from the second cooling gas introduction part.

Abstract translation: 微波热处理装置包括：处理容器，其构造成在其中容纳基板; 支撑构件，其构造成将所述基板可旋转地支撑在所述处理容器中; 微波引入装置，被配置为产生用于处理所述基板并将所述微波引入所述处理容器的微波; 第一冷却气体导入部，其安装成面对由所述支撑构件支撑的所述基板的主表面，所述主表面为待加工对象物; 第二冷却气体引入部，安装在由所述支撑构件支撑的所述基板的侧面中; 以及控制单元，其被配置为独立地控制从所述第一冷却气体导入部引入冷却气体和从所述第二冷却气体导入部引入所述冷却气体。

公开(公告)号：US20140367377A1

公开(公告)日：2014-12-18

申请号：US14293794

申请日：2014-06-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taichi MONDEN ,  Kouji SHIMOMURA ,  Seokhyoung HONG ,  Yoshihiro MIYAGAWA ,  Jun YAMASHITA ,  Taro IKEDA ,  Yuki MOTOMURA

IPC: H05B6/74 ,  H05B6/80 ,  H05B6/64

CPC classification number: H05B6/74 ,  H01L21/67115 ,  H01L21/68742 ,  H01L21/68792 ,  H05B6/705 ,  H05B6/806 ,  H05B2206/044

Abstract: A microwave heating apparatus includes a phase control unit configured to change a phase of a standing wave of microwave introduced into the process chamber by the microwave introduction unit. The phase control unit includes a recessed portion with respect to an inner surface of the bottom wall. The phase control unit is formed of a bottom portion and a fixing plate installed at a lower surface of the bottom portion from the outer side of the process chamber. The phase of the standing wave in the process chamber is changed by the incidence and reflection of the microwave in the recessed portion of the phase control unit surrounded by metallic wall.

Abstract translation: 微波加热装置包括：相位控制单元，被配置为通过微波引入单元改变引入到处理室的微波驻波的相位。 相位控制单元包括相对于底壁的内表面的凹部。 相位控制单元由从处理室的外侧安装在底部的下表面的底部和固定板形成。 处理室中的驻波的相位由金属壁包围的相位控制单元的凹部中的微波的入射和反射而改变。

公开(公告)号：US20150144621A1

公开(公告)日：2015-05-28

申请号：US14549175

申请日：2014-11-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Seokhyoung HONG ,  Mitsutoshi ASHIDA ,  Yoshihiro MIYAGAWA ,  Masaki KOIZUMI

IPC: H05B6/68 ,  H05B6/64

CPC classification number: H01L21/67115 ,  H05B6/6411 ,  H05B6/705 ,  H05B6/806

Abstract: A matching method and a microwave heating method in a microwave heating apparatus for heating a substrate by introducing a microwave into a processing chamber comprises an initial matching step of performing a matching so that a reflection power to a microwave introducing unit is minimized in a state where the substrate is maintained at a first height position by a supporting member. And a second height position determination step of introducing the microwave into the processing chamber by the microwave introducing unit and determining a second height position of the substrate based on at least a temperature of the substrate while adjusting a height of the substrate by the supporting member.

Abstract translation: 微波加热装置中的匹配方法和微波加热方法，用于通过将微波引入处理室来加热基板包括：初始匹配步骤，执行匹配，使得对微波导入单元的反射功率最小化， 基板通过支撑构件保持在第一高度位置。 以及第二高度位置确定步骤，通过微波引入单元将微波引入处理室，并且在通过支撑构件调节基板的高度的同时基于至少基板的温度确定基板的第二高度位置。