公开(公告)号：US20170372914A1

公开(公告)日：2017-12-28

申请号：US15629027

申请日：2017-06-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YAMASHITA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/311 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/3322 ,  H01L21/02263 ,  H01L21/31116

Abstract: An apparatus for processing a gas includes: a mounting part installed in a processing container and on which a substrate is mounted; a first gas flow path where a first gas is supplied from a first gas supply mechanism to an upstream portion of the first gas flow path, and a downstream portion of the first gas flow path is branched to form first branch paths; a second gas flow path where a second gas is supplied from a second gas supply mechanism to an upstream portion of the second gas flow path, and a downstream portion of the second gas flow path is branched to form second branch paths; an annular mixing chamber to which a discharge path is connected; and a gas discharge part discharging a mixture gas.

公开(公告)号：US20130168390A1

公开(公告)日：2013-07-04

申请号：US13727000

申请日：2012-12-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Shigeru KASAI ,  Jun YAMASHITA ,  Masakazu BAN

IPC: H05B6/64

CPC classification number: H05B6/6402 ,  H05B6/6426 ,  H05B6/70 ,  H05B6/707 ,  H05B6/72 ,  H05B6/806

Abstract: In the microwave heating apparatus, four microwave introduction ports are arranged at positions spaced apart from each other at an angle of about 90° in a ceiling portion of a processing chamber in such a way that the long sides and the short sides thereof are in parallel to inner surfaces of four sidewalls. The microwave introduction port are disposed in such a way that each of the microwave introduction ports are not overlapped with another microwave introduction port whose long sides are in parallel to the long sides of the corresponding microwave introduction port when the corresponding microwave introduction port is moved in translation in a direction perpendicular to the long sides thereof.

Abstract translation: 在微波加热装置中，四个微波导入口被配置在处理室的顶部以大约90°的角度彼此间隔开的位置，使得其长边和短边平行 到四个侧壁的内表面。 微波引入端口以这样的方式设置，即当相应的微波引入端口移动时，每个微波引入端口不与其长边与相应的微波导入口的长边平行的另一个微波导入口重叠 在垂直于其长边的方向上平移。

公开(公告)号：US20170362704A1

公开(公告)日：2017-12-21

申请号：US15622545

申请日：2017-06-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YAMASHITA

IPC: C23C16/455 ,  C23C16/44 ,  B01F3/02 ,  B01F5/00

CPC classification number: C23C16/45514 ,  B01F3/02 ,  B01F3/026 ,  B01F5/0068 ,  B01F2005/0014 ,  B01F2215/0096 ,  C23C16/308 ,  C23C16/4412 ,  C23C16/45512 ,  C23C16/45531 ,  C23C16/45544 ,  C23C16/45565

Abstract: A gas mixing device includes: a cylindrical portion including an upper surface which is closed; a gas outflow passage formed in a central portion of a bottom surface of the cylindrical portion, and extends downward; a plurality of gas stream guide walls disposed to be spaced apart from each other in a circumferential direction along an edge of an opening formed by the gas outflow passage in the bottom surface, and installed to be rotationally symmetrical to a center of the cylindrical portion, the gas stream guide walls protruding toward the upper surface; and a gas inlet part installed between the gas stream guide walls and an inner peripheral surface of the cylindrical portion, and into which a gas to be mixed flows.

公开(公告)号：US20150129586A1

公开(公告)日：2015-05-14

申请号：US14603910

申请日：2015-01-23

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Jun YAMASHITA ,  Seokhyoung HONG ,  Kouji SHIMOMURA ,  Hiroyuki HAYASHI

IPC: H05B6/80 ,  H01L21/324

CPC classification number: H05B6/806 ,  H01L21/324

Abstract: A microwave heating apparatus includes a processing chamber having a top wall, a bottom wall and a sidewall, and configured to accommodate an object to be processed; a microwave introducing unit configured to generate a microwave for heating the object and introduce the microwave into the processing chamber; a plurality of supporting members configured to make contact with the object and support the object in the processing chamber. The microwave heating apparatus further includes a dielectric member provided between the object supported by the supporting members and the bottom wall while being apart from the object.

Abstract translation: 微波加热装置包括具有顶壁，底壁和侧壁的处理室，并且被配置为容纳被处理物体; 微波引入单元，被配置为产生用于加热所述物体并将所述微波引入所述处理室的微波; 多个支撑构件，其构造成与所述物体接触并将所述物体支撑在所述处理室中。 微波加热装置还包括设置在由支撑构件支撑的物体和与该物体分离的底壁之间的电介质构件。

公开(公告)号：US20140367377A1

公开(公告)日：2014-12-18

申请号：US14293794

申请日：2014-06-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taichi MONDEN ,  Kouji SHIMOMURA ,  Seokhyoung HONG ,  Yoshihiro MIYAGAWA ,  Jun YAMASHITA ,  Taro IKEDA ,  Yuki MOTOMURA

IPC: H05B6/74 ,  H05B6/80 ,  H05B6/64

CPC classification number: H05B6/74 ,  H01L21/67115 ,  H01L21/68742 ,  H01L21/68792 ,  H05B6/705 ,  H05B6/806 ,  H05B2206/044

Abstract: A microwave heating apparatus includes a phase control unit configured to change a phase of a standing wave of microwave introduced into the process chamber by the microwave introduction unit. The phase control unit includes a recessed portion with respect to an inner surface of the bottom wall. The phase control unit is formed of a bottom portion and a fixing plate installed at a lower surface of the bottom portion from the outer side of the process chamber. The phase of the standing wave in the process chamber is changed by the incidence and reflection of the microwave in the recessed portion of the phase control unit surrounded by metallic wall.

Abstract translation: 微波加热装置包括：相位控制单元，被配置为通过微波引入单元改变引入到处理室的微波驻波的相位。 相位控制单元包括相对于底壁的内表面的凹部。 相位控制单元由从处理室的外侧安装在底部的下表面的底部和固定板形成。 处理室中的驻波的相位由金属壁包围的相位控制单元的凹部中的微波的入射和反射而改变。

公开(公告)号：US20190122868A1

公开(公告)日：2019-04-25

申请号：US16161486

申请日：2018-10-16

Applicant: Tokyo Electron Limited

Inventor： Jun YAMASHITA

IPC: H01J37/32

Abstract: A processing device includes a reaction container that receives a gas flowing into the reaction container and performs a predetermined process in a treatment chamber, a member that communicates with an exhaust port at a portion in which a diffusion path of a sidewall or a bottom wall of the reaction container is formed, and an opening that is present between the member having the diffusion path and the reaction container to cause the diffusion path and a space of the treatment chamber to communicate, an opening area of the opening being narrower as a position of the opening area is closer to the exhaust port.