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    FILM DEPOSITION METHOD, STORAGE MEDIUM, AND FILM DEPOSITION APPARATUS
    1.
    发明申请
    FILM DEPOSITION METHOD, STORAGE MEDIUM, AND FILM DEPOSITION APPARATUS 有权
    薄膜沉积方法，储存介质和薄膜沉积装置

    公开(公告)号：US20140147591A1

    公开(公告)日：2014-05-29

    申请号：US14088727

    申请日：2013-11-25

    Applicant: Tokyo Electron Limited

    Inventor： Hiroaki IKEGAWA ,  Masahiko Kaminishi ,  Kosuke Takahashi ,  Yu Sasaki ,  Jun Ogawa

    IPC: C23C16/52

    CPC classification number: C23C16/52 ,  C23C16/40 ,  C23C16/45531 ,  C23C16/45551

    Abstract: A film deposition method includes rotating a rotary table by a first angle while supplying a separation gas from a separation gas supplying part and a first reaction gas from a first gas supplying part; supplying a second reaction gas from a second gas supplying part and rotating the rotary table by a second angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; rotating the rotary table by a third angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; and supplying a third reaction gas from the second gas supplying part and rotating the rotary table by a fourth angle while supplying the separation gas and the first reaction gas.

    Abstract translation: 一种膜沉积方法包括：在从分离气体供应部分供应分离气体和从第一气体供应部分提供第一反应气体的同时旋转第一角度的旋转台; 从第二气体供给部供给第二反应气体，并在从分离气体供给部供给分离气体和从第一气体供给部供给第一反应气体的同时使旋转台旋转第二角度; 同时从第一气体供给部分供给来自分离气体供给部分和第一反应气体的分离气体，使旋转台旋转第三角度; 从第二气体供给部供给第三反应气体，并在供给分离气体和第一反应气体的同时旋转第四角度的旋转台。

    METHOD OF DETOXIFYING EXHAUST PIPE AND FILM FORMING APPARATUS
    2.
    发明申请
    METHOD OF DETOXIFYING EXHAUST PIPE AND FILM FORMING APPARATUS 审中-公开
    去除排气管和膜成型装置的方法

    公开(公告)号：US20160220953A1

    公开(公告)日：2016-08-04

    申请号：US15003138

    申请日：2016-01-21

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Yu Wamura ,  Fumiaki Hayase ,  Masahiko Kaminishi ,  Kosuke Takahashi ,  Yu Sasaki ,  Hiroko Sasaki

    IPC: B01D53/76 ,  C23C16/458 ,  C23C16/455 ,  C23C16/52 ,  B01D53/54 ,  C23C16/44

    CPC classification number: C23C16/4584 ,  B01D53/54 ,  B01D53/72 ,  B01D53/76 ,  B01D2251/104 ,  B01D2258/0216 ,  C23C16/4412 ,  C23C16/45551

    Abstract: A method of detoxifying an exhaust pipe in a film forming apparatus configured to supply a raw material gas contending a harmful component and a reaction gas capable of generating a harmless reaction product by reaction with the raw material gas into a process chamber to perform a film forming process on a substrate while independently exhausting the raw material gas and the reaction gas from a raw material exhaust pipe and a reaction gas exhaust pipe connected to the process chamber, respectively, is provided. The method includes supplying the reaction gas into the raw material exhaust pipe to detoxify an interior of the raw material exhaust pipe during a predetermined period in which the film forming apparatus is operated and the film forming process is not performed.

    Abstract translation: 一种成膜装置的排气管的方法，该成膜装置被配置为将与原料气体反应产生无害反应产物的能够产生有害成分的原料气体的反应气体供给到处理室，从而进行成膜 提供了分别从连接到处理室的原料排气管和反应气体排出管独立地排出原料气体和反应气体的基板上的工序。 该方法包括将原料排气管中的反应气体供给到原料排气管的内部，在成膜装置运转的规定期间内不进行成膜处理。

    Nozzle and substrate processing apparatus using same
    5.
    发明授权
    Nozzle and substrate processing apparatus using same 有权

    公开(公告)号：US10472719B2

    公开(公告)日：2019-11-12

    申请号：US14933123

    申请日：2015-11-05

    Applicant: Tokyo Electron Limited

    Inventor： Yu Wamura ,  Fumiaki Hayase ,  Masahiko Kaminishi ,  Kosuke Takahashi ,  Hiroko Sasaki ,  Yu Sasaki

    IPC: C23C16/455 ,  H01J37/32 ,  B05B1/20

    Abstract: A nozzle for supplying a fluid includes a tubular part including a tubular passage thereinside and a fluid discharge surface having a plurality of fluid discharge holes formed therein along a lengthwise direction of the tubular passage. A partition plate is provided in the tubular passage and extends along the lengthwise direction so as to partition the tubular passage into a first area including the fluid discharge surface and a second area without the fluid discharge surface. The partition plate has distribution holes whose number is less than a number of the plurality of fluid discharge holes in the lengthwise direction. A fluid introduction passage is in communication with the second area.

    Film deposition method
    6.
    发明授权
    Film deposition method 有权
    膜沉积法

    公开(公告)号：US08980371B2

    公开(公告)日：2015-03-17

    申请号：US14088727

    申请日：2013-11-25

    Applicant: Tokyo Electron Limited

    Inventor： Hiroaki Ikegawa ,  Masahiko Kaminishi ,  Kosuke Takahashi ,  Yu Sasaki ,  Jun Ogawa

    IPC: C23C16/44 ,  C23C16/52 ,  C23C16/458

    CPC classification number: C23C16/52 ,  C23C16/40 ,  C23C16/45531 ,  C23C16/45551

    Abstract: A film deposition method includes rotating a rotary table by a first angle while supplying a separation gas from a separation gas supplying part and a first reaction gas from a first gas supplying part; supplying a second reaction gas from a second gas supplying part and rotating the rotary table by a second angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; rotating the rotary table by a third angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; and supplying a third reaction gas from the second gas supplying part and rotating the rotary table by a fourth angle while supplying the separation gas and the first reaction gas.

    Abstract translation: 一种膜沉积方法包括：在从分离气体供应部分供应分离气体和从第一气体供应部分提供第一反应气体的同时旋转第一角度的旋转台; 从第二气体供给部供给第二反应气体，并在从分离气体供给部供给分离气体和从第一气体供给部供给第一反应气体的同时使旋转台旋转第二角度; 同时从第一气体供给部分供给来自分离气体供给部分和第一反应气体的分离气体，使旋转台旋转第三角度; 从第二气体供给部供给第三反应气体，并在供给分离气体和第一反应气体的同时旋转第四角度的旋转台。

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