公开(公告)号：US20240120217A1

公开(公告)日：2024-04-11

申请号：US18473459

申请日：2023-09-25

Applicant: Tokyo Electron Limited

Inventor： Shinichiro KAWAKAMI ,  Kosuke YOSHIHARA ,  Satoru SHIMURA ,  Yuhei KUWAHARA ,  Tomoya ONITSUKA ,  Soichiro OKADA ,  Tetsunari FURUSHO

IPC: H01L21/67 ,  H01L21/027

CPC classification number: H01L21/67109 ,  H01L21/027

Abstract: A substrate treatment method includes: performing a first heat treatment on a substrate on which a coating film of a metal-containing resist has been formed and subjected to an exposure treatment, to form the metal-containing resist into a precursor in an exposed region of the coating film; thereafter, performing a second heat treatment on the substrate to condense the metal-containing resist formed into the precursor in the exposed region of the coating film; and thereafter, performing a developing treatment on the substrate.