公开(公告)号：US20240347354A1

公开(公告)日：2024-10-17

申请号：US18632500

申请日：2024-04-11

Applicant: Tokyo Electron Limited

Inventor： Ryouichirou NAITOU ,  Shinichiro KAWAKAMI ,  Tomoya ONITSUKA ,  Soichiro OKADA ,  Satoru SHIMURA

IPC: H01L21/67 ,  G03F7/38 ,  H01L21/027

CPC classification number: H01L21/67109 ,  H01L21/0274 ,  H01L21/67017 ,  G03F7/38

Abstract: A heat-treating method of performing a heat treatment on a substrate on which a film of a metal-containing resist film is formed and which is subjected to an exposure treatment, includes an operation of heating the substrate for a predetermined period of time at a heating temperature at which a metal-containing sublimate is not generated from the film of the metal-containing resist, wherein during the operation of heating the substrate, a reactive fluid in which a concentration of at least one of a carbon dioxide or moisture is higher than a concentration in an atmosphere to promote a reaction within the film of the metal-containing resist, is supplied to a processing space around the substrate.

公开(公告)号：US20240288775A1

公开(公告)日：2024-08-29

申请号：US18573627

申请日：2022-06-16

Applicant: Tokyo Electron Limited

Inventor： Soichiro OKADA

IPC: G03F7/20 ,  H01L21/311 ,  H01L21/67

CPC classification number: G03F7/2004 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/67075

Abstract: A substrate processing method includes: insolubilizing a resist pattern with respect to a phosphoric acid solution by irradiating a substrate, on which an organic film, a silicon-containing inorganic film, and the resist pattern are sequentially stacked in this order from below, with ultraviolet rays; after the insolubilizing the resist pattern, removing the silicon-containing inorganic film exposed from the resist pattern by supplying the phosphoric acid solution to the substrate; and after the removing the silicon-containing inorganic film, transferring the resist pattern to the organic film by performing an etching process on the substrate.

公开(公告)号：US20240248413A1

公开(公告)日：2024-07-25

申请号：US18416087

申请日：2024-01-18

Applicant: Tokyo Electron Limited

Inventor： Takeshi SHIMOAOKI ,  Arnaud Alain Jean DAUENDORFFER ,  Keisuke YOSHIDA ,  Shinichiro KAWAKAMI ,  Yuya KAMEI ,  Soichiro OKADA ,  Takafumi NIWA

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  H01L21/033

CPC classification number: G03F7/706837 ,  G03F7/161 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/70008 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70866 ,  H01L21/0337 ,  G03F7/0042

Abstract: A substrate treatment method includes: developing a substrate which has a coating film of an inorganic resist formed on a base film thereon and has been subjected to an exposure treatment, with a developing solution to form a pattern of the inorganic resist; supplying an embedding solution to the developed substrate to fill a space between adjacent protrusions of the pattern; drying the filled embedding solution to form an embedded film on the substrate; and reducing a thickness of the embedded film by an ultraviolet ray.

公开(公告)号：US20240120217A1

公开(公告)日：2024-04-11

申请号：US18473459

申请日：2023-09-25

Applicant: Tokyo Electron Limited

Inventor： Shinichiro KAWAKAMI ,  Kosuke YOSHIHARA ,  Satoru SHIMURA ,  Yuhei KUWAHARA ,  Tomoya ONITSUKA ,  Soichiro OKADA ,  Tetsunari FURUSHO

IPC: H01L21/67 ,  H01L21/027

CPC classification number: H01L21/67109 ,  H01L21/027

Abstract: A substrate treatment method includes: performing a first heat treatment on a substrate on which a coating film of a metal-containing resist has been formed and subjected to an exposure treatment, to form the metal-containing resist into a precursor in an exposed region of the coating film; thereafter, performing a second heat treatment on the substrate to condense the metal-containing resist formed into the precursor in the exposed region of the coating film; and thereafter, performing a developing treatment on the substrate.

公开(公告)号：US20210318618A1

公开(公告)日：2021-10-14

申请号：US17268362

申请日：2019-08-21

Applicant: Tokyo Electron Limited

Inventor： Satoru SHIMURA ,  Soichiro OKADA ,  Masashi ENOMOTO ,  Hidetami YAEGASHI

IPC: G03F7/11 ,  H01L21/027 ,  G03F7/16

Abstract: A substrate treatment method of treating a treatment object substrate includes before applying a resist solution for forming a resist film onto a base film formed on a substrate surface of the treatment object substrate, performing a treatment of decreasing a polarity of the base film when the polarity of the base film is higher than a polarity of the resist solution, and performing a treatment of increasing the polarity of the base film when the polarity of the base film is lower than the polarity of the resist solution.

公开(公告)号：US20170148641A1

公开(公告)日：2017-05-25

申请号：US15117052

申请日：2015-01-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshikatsu TOBANA ,  Gen YOU ,  Soichiro OKADA

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/683

CPC classification number: H01L21/31138 ,  H01L21/02118 ,  H01L21/31144 ,  H01L21/6831

Abstract: This method for processing a target object includes steps ST1 to ST4. The target object has an organic polymer layer and a resist mask on a substrate. In step ST1, the target object is electrostatically attached to an electrostatic chuck in a plasma processing apparatus. In step ST2, the organic polymer layer is etched through the resist mask by means of a plasma of a first gas. In step ST3, the target object is detached from the electrostatic chuck while a plasma of a second gas is generated. In step 4, the resist mask is peeled off. The second gas is either oxygen gas or a mixture of oxygen gas and a rare gas having an atomic weight lower than that of argon gas.