公开(公告)号：US20200340116A1

公开(公告)日：2020-10-29

申请号：US16852475

申请日：2020-04-18

Applicant: Tokyo Electron Limited

Inventor： Yasuaki Kikuchi ,  Tatsuya Yamaguchi ,  Kazuteru Obara ,  Ryuji Kusajima

IPC: C23C16/46 ,  C23C16/34 ,  C23C16/52 ,  H01L21/67 ,  H01L21/673 ,  H01L21/02

Abstract: A heat treatment apparatus includes: an inner tube having a cylindrical shape and configured to accommodate a substrate; an outer tube configured to cover an outside of the inner tube; a heater provided around the outer tube; a gas supply pipe that extends along a longitudinal direction in the inner tube; an opening formed in a side wall of the inner tube facing the gas supply pipe; a temperature sensor provided at a position shifted by a predetermined angle from the opening in a circumferential direction of the inner tube; and a controller that controls the heater based on a detected value of the temperature sensor.

公开(公告)号：US20200340111A1

公开(公告)日：2020-10-29

申请号：US16852478

申请日：2020-04-19

Applicant: Tokyo electron limited

Inventor： Yasuaki Kikuchi ,  Tatsuya Yamaguchi ,  Kazuteru Obara ,  Ryuji Kusajima

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/458

Abstract: A film forming method includes: accommodating a substrate in a processing container of a film forming apparatus; supplying an inert gas to the processing container at a flow rate equal to an average flow rate of a plurality of gases to be supplied into the processing container in a film forming process and maintaining a pressure of the processing container to be substantially same as an average pressure of the processing container in the film forming process; and alternately supplying the plurality of gases into the processing container and forming a film on the substrate.

公开(公告)号：US11581201B2

公开(公告)日：2023-02-14

申请号：US16820898

申请日：2020-03-17

Applicant: Tokyo Electron Limited

Inventor： Kazuteru Obara ,  Tatsuya Yamaguchi ,  Yasuaki Kikuchi ,  Ryuji Kusajima ,  Shinya Nasukawa ,  Kazuyuki Kikuchi

IPC: H01L21/67 ,  C23C16/455 ,  H01L21/324 ,  H01L21/677 ,  C23C16/34

Abstract: A heat treatment apparatus includes: a processing container configured to accommodate and process a plurality of substrates in multiple tiers under a reduced-pressure environment; a first heater configured to heat the plurality of substrates accommodated in the processing container; a plurality of gas supply pipes configured to supply a gas to positions having different heights in the processing container; and a second heater provided on a gas supply pipe that supplies a gas to a lowermost position among the plurality of gas supply pipes, and configured to heat the gas in the gas supply pipe.

公开(公告)号：US20200303222A1

公开(公告)日：2020-09-24

申请号：US16820898

申请日：2020-03-17

Applicant: Tokyo Electron Limited

Inventor： Kazuteru Obara ,  Tatsuya Yamaguchi ,  Yasuaki Kikuchi ,  Ryuji Kusajima ,  Shinya Nasukawa ,  Kazuyuki Kikuchi

IPC: H01L21/67 ,  C23C16/455 ,  C23C16/34 ,  H01L21/677 ,  H01L21/324

Abstract: A heat treatment apparatus includes: a processing container configured to accommodate and process a plurality of substrates in multiple tiers under a reduced-pressure environment; a first heater configured to heat the plurality of substrates accommodated in the processing container; a plurality of gas supply pipes configured to supply a gas to positions having different heights in the processing container; and a second heater provided on a gas supply pipe that supplies a gas to a lowermost position among the plurality of gas supply pipes, and configured to heat the gas in the gas supply pipe.

公开(公告)号：US11784070B2

公开(公告)日：2023-10-10

申请号：US16852475

申请日：2020-04-18

Applicant: Tokyo Electron Limited

Inventor： Yasuaki Kikuchi ,  Tatsuya Yamaguchi ,  Kazuteru Obara ,  Ryuji Kusajima

IPC: H01L21/67 ,  C23C16/46 ,  C23C16/34 ,  C23C16/52 ,  H01L21/02 ,  H01L21/673

CPC classification number: H01L21/67248 ,  C23C16/345 ,  C23C16/46 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/02269 ,  H01L21/67109 ,  H01L21/67303

Abstract: A heat treatment apparatus includes: an inner tube having a cylindrical shape and configured to accommodate a substrate; an outer tube configured to cover an outside of the inner tube; a heater provided around the outer tube; a gas supply pipe that extends along a longitudinal direction in the inner tube; an opening formed in a side wall of the inner tube facing the gas supply pipe; a temperature sensor provided at a position shifted by a predetermined angle from the opening in a circumferential direction of the inner tube; and a controller that controls the heater based on a detected value of the temperature sensor.

公开(公告)号：US11674224B2

公开(公告)日：2023-06-13

申请号：US16852478

申请日：2020-04-19

Applicant: Tokyo electron limited

Inventor： Yasuaki Kikuchi ,  Tatsuya Yamaguchi ,  Kazuteru Obara ,  Ryuji Kusajima

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/34

CPC classification number: C23C16/45527 ,  C23C16/345 ,  C23C16/4583

Abstract: A film forming method includes: accommodating a substrate in a processing container of a film forming apparatus; supplying an inert gas to the processing container at a flow rate equal to an average flow rate of a plurality of gases to be supplied into the processing container in a film forming process and maintaining a pressure of the processing container to be substantially same as an average pressure of the processing container in the film forming process; and alternately supplying the plurality of gases into the processing container and forming a film on the substrate.