公开(公告)号：US20200340116A1

公开(公告)日：2020-10-29

申请号：US16852475

申请日：2020-04-18

Applicant: Tokyo Electron Limited

Inventor： Yasuaki Kikuchi ,  Tatsuya Yamaguchi ,  Kazuteru Obara ,  Ryuji Kusajima

IPC: C23C16/46 ,  C23C16/34 ,  C23C16/52 ,  H01L21/67 ,  H01L21/673 ,  H01L21/02

Abstract: A heat treatment apparatus includes: an inner tube having a cylindrical shape and configured to accommodate a substrate; an outer tube configured to cover an outside of the inner tube; a heater provided around the outer tube; a gas supply pipe that extends along a longitudinal direction in the inner tube; an opening formed in a side wall of the inner tube facing the gas supply pipe; a temperature sensor provided at a position shifted by a predetermined angle from the opening in a circumferential direction of the inner tube; and a controller that controls the heater based on a detected value of the temperature sensor.

公开(公告)号：US20200340111A1

公开(公告)日：2020-10-29

申请号：US16852478

申请日：2020-04-19

Applicant: Tokyo electron limited

Inventor： Yasuaki Kikuchi ,  Tatsuya Yamaguchi ,  Kazuteru Obara ,  Ryuji Kusajima

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/458

Abstract: A film forming method includes: accommodating a substrate in a processing container of a film forming apparatus; supplying an inert gas to the processing container at a flow rate equal to an average flow rate of a plurality of gases to be supplied into the processing container in a film forming process and maintaining a pressure of the processing container to be substantially same as an average pressure of the processing container in the film forming process; and alternately supplying the plurality of gases into the processing container and forming a film on the substrate.

公开(公告)号：US10431479B2

公开(公告)日：2019-10-01

申请号：US15864299

申请日：2018-01-08

Applicant: Tokyo Electron Limited

Inventor： Tatsuya Yamaguchi ,  Kazuteru Obara ,  Yasuaki Kikuchi ,  Koji Yoshii

IPC: H01L21/67

Abstract: Disclosed is a heat treatment apparatus including: a processing container configured to accommodate a substrate; a furnace body having a heater configured to heat the substrate accommodated in the processing container and provided around the processing container; a blower configured to supply a coolant to a space between the processing container and the furnace body; and a controller having a continuous operation mode in which the blower is continuously energized and an intermittent operation mode in which energization and de-energization of the blower are repeated, and configured to control driving of the blower based on an instruction voltage. The controller drives the blower in the intermittent operation mode when the instruction voltage is higher than 0 V and lower than a predetermined threshold voltage.

公开(公告)号：US11581201B2

公开(公告)日：2023-02-14

申请号：US16820898

申请日：2020-03-17

Applicant: Tokyo Electron Limited

Inventor： Kazuteru Obara ,  Tatsuya Yamaguchi ,  Yasuaki Kikuchi ,  Ryuji Kusajima ,  Shinya Nasukawa ,  Kazuyuki Kikuchi

IPC: H01L21/67 ,  C23C16/455 ,  H01L21/324 ,  H01L21/677 ,  C23C16/34

Abstract: A heat treatment apparatus includes: a processing container configured to accommodate and process a plurality of substrates in multiple tiers under a reduced-pressure environment; a first heater configured to heat the plurality of substrates accommodated in the processing container; a plurality of gas supply pipes configured to supply a gas to positions having different heights in the processing container; and a second heater provided on a gas supply pipe that supplies a gas to a lowermost position among the plurality of gas supply pipes, and configured to heat the gas in the gas supply pipe.

公开(公告)号：US20200303222A1

公开(公告)日：2020-09-24

申请号：US16820898

申请日：2020-03-17

Applicant: Tokyo Electron Limited

Inventor： Kazuteru Obara ,  Tatsuya Yamaguchi ,  Yasuaki Kikuchi ,  Ryuji Kusajima ,  Shinya Nasukawa ,  Kazuyuki Kikuchi

IPC: H01L21/67 ,  C23C16/455 ,  C23C16/34 ,  H01L21/677 ,  H01L21/324

Abstract: A heat treatment apparatus includes: a processing container configured to accommodate and process a plurality of substrates in multiple tiers under a reduced-pressure environment; a first heater configured to heat the plurality of substrates accommodated in the processing container; a plurality of gas supply pipes configured to supply a gas to positions having different heights in the processing container; and a second heater provided on a gas supply pipe that supplies a gas to a lowermost position among the plurality of gas supply pipes, and configured to heat the gas in the gas supply pipe.

公开(公告)号：US12196492B2

公开(公告)日：2025-01-14

申请号：US17662699

申请日：2022-05-10

Applicant: Tokyo Electron Limited

Inventor： Kazuteru Obara ,  Tatsuya Yamaguchi

IPC: H01L21/67 ,  F27D21/00 ,  F27D9/00 ,  F27D19/00

Abstract: A heat treatment apparatus including: a cylindrical processing container; a heater configured to heat the processing container; and a cooler configured to cool the processing container, wherein the cooler includes: discharge holes provided at intervals in a longitudinal direction of the processing container, the discharge holes being configured to discharge a cooling medium toward the processing container; a branch configured to divide the cooling medium into a plurality of flowing paths that communicate with the discharge holes; and blowers provided for respective ones of the flowing paths, the blowers being configured to send the cooling medium to the discharge holes that communicate with the respective ones of the flowing paths.

公开(公告)号：US11656126B2

公开(公告)日：2023-05-23

申请号：US16685047

申请日：2019-11-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuteru Obara ,  Koji Yoshii ,  Yuki Wada ,  Hitoshi Kikuchi

IPC: C23C16/52 ,  G01J5/00 ,  C23C16/40 ,  C23C16/46 ,  C23C16/458 ,  C23C16/455 ,  H01L21/02 ,  H01L21/687 ,  G05D23/19 ,  H01L21/67 ,  G02B26/12 ,  G01J5/07

CPC classification number: G01J5/0007 ,  C23C16/402 ,  C23C16/4584 ,  C23C16/45551 ,  C23C16/46 ,  C23C16/52 ,  G01J5/07 ,  G02B26/12 ,  G05D23/1931 ,  H01L21/0228 ,  H01L21/02164 ,  H01L21/67248 ,  H01L21/68764 ,  H01L21/68771

Abstract: There is provided a heat treatment apparatus for performing a predetermined film forming process on a substrate by mounting the substrate on a surface of a rotary table installed in a processing vessel and heating the substrate by a heating part while rotating the rotary table. The heat treatment apparatus includes: a first temperature measuring part of a contact-type configured to measure a temperature of the heating part; a second temperature measuring part of a non-contact type configured to measure a temperature of the substrate mounted on the rotary table in a state where the rotary table is being rotated; and a temperature control part configured to control the heating part based on a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part.

公开(公告)号：US11784070B2

公开(公告)日：2023-10-10

申请号：US16852475

申请日：2020-04-18

Applicant: Tokyo Electron Limited

Inventor： Yasuaki Kikuchi ,  Tatsuya Yamaguchi ,  Kazuteru Obara ,  Ryuji Kusajima

IPC: H01L21/67 ,  C23C16/46 ,  C23C16/34 ,  C23C16/52 ,  H01L21/02 ,  H01L21/673

CPC classification number: H01L21/67248 ,  C23C16/345 ,  C23C16/46 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/02269 ,  H01L21/67109 ,  H01L21/67303

Abstract: A heat treatment apparatus includes: an inner tube having a cylindrical shape and configured to accommodate a substrate; an outer tube configured to cover an outside of the inner tube; a heater provided around the outer tube; a gas supply pipe that extends along a longitudinal direction in the inner tube; an opening formed in a side wall of the inner tube facing the gas supply pipe; a temperature sensor provided at a position shifted by a predetermined angle from the opening in a circumferential direction of the inner tube; and a controller that controls the heater based on a detected value of the temperature sensor.

公开(公告)号：US11674224B2

公开(公告)日：2023-06-13

申请号：US16852478

申请日：2020-04-19

Applicant: Tokyo electron limited

Inventor： Yasuaki Kikuchi ,  Tatsuya Yamaguchi ,  Kazuteru Obara ,  Ryuji Kusajima

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/34

CPC classification number: C23C16/45527 ,  C23C16/345 ,  C23C16/4583

Abstract: A film forming method includes: accommodating a substrate in a processing container of a film forming apparatus; supplying an inert gas to the processing container at a flow rate equal to an average flow rate of a plurality of gases to be supplied into the processing container in a film forming process and maintaining a pressure of the processing container to be substantially same as an average pressure of the processing container in the film forming process; and alternately supplying the plurality of gases into the processing container and forming a film on the substrate.

公开(公告)号：US10533896B2

公开(公告)日：2020-01-14

申请号：US15191599

申请日：2016-06-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuteru Obara ,  Koji Yoshii ,  Yuki Wada ,  Hitoshi Kikuchi

IPC: G01J5/00 ,  C23C16/52 ,  C23C16/46 ,  C23C16/458 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/687

Abstract: There is provided a heat treatment apparatus for performing a predetermined film forming process on a substrate by mounting the substrate on a surface of a rotary table installed in a processing vessel and heating the substrate by a heating part while rotating the rotary table. The heat treatment apparatus includes: a first temperature measuring part of a contact-type configured to measure a temperature of the heating part; a second temperature measuring part of a non-contact type configured to measure a temperature of the substrate mounted on the rotary table in a state where the rotary table is being rotated; and a temperature control part configured to control the heating part based on a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part.