利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

41 条记录 (耗时 0.025 秒)

    CHARGED PARTICLE BEAM DEVICE AND A METHOD OF IMPROVING IMAGE QUALITY OF THE SAME
    2.
    发明申请
    CHARGED PARTICLE BEAM DEVICE AND A METHOD OF IMPROVING IMAGE QUALITY OF THE SAME 有权
    充电颗粒束装置和改进其图像质量的方法

    公开(公告)号：US20120274757A1

    公开(公告)日：2012-11-01

    申请号：US13513280

    申请日：2010-11-08

    申请人： Jie Bai ,  Kenji Nakahira ,  Atsushi Miyamoto ,  Chie Shishido ,  Hideyuki Kazumi

    发明人： Jie Bai ,  Kenji Nakahira ,  Atsushi Miyamoto ,  Chie Shishido ,  Hideyuki Kazumi

    IPC分类号： H04N7/18

    CPC分类号： H01J37/28 ,  H01J37/244 ,  H01J2237/24495 ,  H01J2237/2809 ,  H01J2237/2817 ,  H01L22/12

    摘要： The invention relates to a technique of improving a contrast of a lower-layer pattern in a multi layer by synthesizing detected signals from a plurality of detectors by using an appropriate allocation ratio in accordance with pattern arrangement. In a charged particle beam device capable of improving image quality by using detected images obtained from a plurality of detectors and in a method of improving the image quality, a method of generating one or more output images from detected images corresponding to respective outputs of the detectors that are arranged at different locations is controlled by using information of a pattern direction, an edge strength, or others calculated from a design data or the detected image. In this manner, a detection area of the detected signals can be expanded by using the plurality of detectors, and the image quality such as the contrast can be improved by synthesizing the detected signals by using the pattern direction or the edge strength calculated from the design data or the detected images.

    摘要翻译： 本发明涉及一种通过根据图案布置使用合适的分配比例来合成来自多个检测器的检测信号来提高多层下层图案的对比度的技术。 在能够通过使用从多个检测器获得的检测图像来提高图像质量的带电粒子束装置中，以及提高图像质量的方法中，提供一种从与检测器的各个输出对应的检测图像生成一个或多个输出图像的方法 通过使用从设计数据或检测到的图像计算的图案方向，边缘强度或其他的信息来控制布置在不同位置处的位置。 以这种方式，可以通过使用多个检测器来扩展检测信号的检测区域，并且可以通过使用从设计计算出的图案方向或边缘强度合成检测信号来提高诸如对比度的图像质量 数据或检测到的图像。

    METHOD OF ETCHING A MULTI-LAYER
    4.
    发明申请
    METHOD OF ETCHING A MULTI-LAYER 审中-公开
    蚀刻多层的方法

    公开(公告)号：US20100326954A1

    公开(公告)日：2010-12-30

    申请号：US12492152

    申请日：2009-06-26

    申请人： Zhen Yu Zhuo ,  Shi Jie Bai

    发明人： Zhen Yu Zhuo ,  Shi Jie Bai

    IPC分类号： C23F1/02

    CPC分类号： C23F4/00 ,  H01L21/32136

    摘要： A method of etching a multi-layer is provided. The multi-layer includes an aluminum layer disposed on a semiconductor substrate and an anti-reflection coating layer disposed on the aluminum layer. The method includes: performing a first etching process to etch the anti-reflection coating layer by providing a first etching gas, wherein the first etching gas includes a chlorine-containing substance; then performing a second etching process to etch the aluminum layer by providing a second etching gas, wherein the second etching gas does not include a chlorine-containing compound.

    摘要翻译： 提供蚀刻多层的方法。 多层包括设置在半导体衬底上的铝层和设置在铝层上的抗反射涂层。 该方法包括：通过提供第一蚀刻气体进行第一蚀刻工艺以蚀刻抗反射涂层，其中第一蚀刻气体包括含氯物质; 然后进行第二蚀刻工艺以通过提供第二蚀刻气体来蚀刻铝层，其中第二蚀刻气体不包括含氯化合物。

    REWORK METHOD OF METAL HARD MASK
    5.
    发明申请
    REWORK METHOD OF METAL HARD MASK 审中-公开
    金属硬掩模的方法

    公开(公告)号：US20100190272A1

    公开(公告)日：2010-07-29

    申请号：US12358914

    申请日：2009-01-23

    申请人： Yu Zhang ,  Bin Zhao ,  Kah-Lun Toh ,  Shi-Jie Bai

    发明人： Yu Zhang ,  Bin Zhao ,  Kah-Lun Toh ,  Shi-Jie Bai

    IPC分类号： H01L21/302 ,  H01L21/44 ,  H01L21/02

    CPC分类号： H01L21/76802 ,  H01L21/31144

    摘要： A rework method of a metal hard mask layer is provided. First, a material layer is provided. A dielectric layer, a first metal hard mask layer, and a patterned first dielectric hard mask layer have been sequentially formed on the material layer. There is a defect on a region of the first metal hard mask layer, and therefore the region of the first metal hard mask layer is not able to be patterned. After that, the patterned first dielectric hard mask layer and the first metal hard mask layer are removed. A planarization process is then performed on the dielectric layer. Next, a second metal hard mask layer and a second dielectric hard mask layer are sequentially formed on the dielectric layer.

    摘要翻译： 提供了金属硬掩模层的返工方法。 首先，提供材料层。 电介质层，第一金属硬掩模层和图案化的第一电介质硬掩模层已顺序地形成在材料层上。 在第一金属硬掩模层的区域上存在缺陷，因此第一金属硬掩模层的区域不能被图案化。 之后，去除图案化的第一电介质硬掩模层和第一金属硬掩模层。 然后在电介质层上进行平坦化处理。 接下来，在电介质层上依次形成第二金属硬掩模层和第二电介质硬掩模层。

    Two-step method for etching a fuse window on a semiconductor substrate
    6.
    发明授权
    Two-step method for etching a fuse window on a semiconductor substrate 有权
    用于蚀刻半导体衬底上的熔丝窗的两步法

    公开(公告)号：US07622395B2

    公开(公告)日：2009-11-24

    申请号：US11616300

    申请日：2006-12-27

    申请人： Shi-Jie Bai ,  Hong Ma

    发明人： Shi-Jie Bai ,  Hong Ma

    IPC分类号： H01L21/302

    CPC分类号： H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A two-step method for etching a fuse window on a semiconductor substrate is provided. A semiconductor substrate having thereon a fuse interconnect-wire is formed in a dielectric film stack. The dielectric film stack includes a target dielectric layer overlying said fuse interconnect-wire, an intermediate dielectric layer and a passivation layer. A photoresist layer is formed on the passivation layer with an opening that defines said fuse window. A first dry etching process is performed to non-selectively etch the passivation layer and the intermediate dielectric layer through the opening thereby exposing the target dielectric layer. The thickness of the target dielectric layer after the first dry etching process is then measured. An APC-controlled second dry etching process is performed to etch a portion of the exposed target dielectric layer, thereby reliably forming the fuse window.

    摘要翻译： 提供了用于蚀刻半导体衬底上的熔丝窗的两步法。 具有熔丝互连线的半导体衬底形成在电介质膜叠层中。 电介质膜堆叠包括覆盖所述熔丝互连线的目标介电层，中间介电层和钝化层。 在钝化层上形成具有限定所述熔丝窗的开口的光致抗蚀剂层。 执行第一干蚀刻工艺以通过开口非选择性地蚀刻钝化层和中间介电层，从而暴露目标介电层。 然后测量第一干蚀刻工艺之后的目标介电层的厚度。 执行APC控制的第二干蚀刻工艺以蚀刻暴露的目标介电层的一部分，从而可靠地形成熔丝窗。

    Modeling Subterranean Rock Blocks In An Injection Treatment Simulation
    7.
    发明申请
    Modeling Subterranean Rock Blocks In An Injection Treatment Simulation 有权
    在注射处理模拟中建模地下岩块

    公开(公告)号：US20140222393A1

    公开(公告)日：2014-08-07

    申请号：US13757306

    申请日：2013-02-01

    申请人： Jie Bai ,  Samuel Bryant Johnson ,  Harold Grayson Walters

    发明人： Jie Bai ,  Samuel Bryant Johnson ,  Harold Grayson Walters

    IPC分类号： G06F17/50

    CPC分类号： E21B43/26 ,  G01V99/005 ,  G01V2210/646 ,  G06F17/5009

    摘要： Systems, methods, and software can be used to simulate a fracture treatment. In some aspects, physically separate rock blocks of a subterranean zone are modeled by separate block models. The block model for each physically separate rock block represents intra-block mechanics of the rock block, for example, as a group of discrete block elements. Interactions between adjacent pairs of the rock blocks are modeled by separate joint models. The joint model for each adjacent pair of rock blocks represents inter-block mechanics between the adjacent rock blocks, for example, as pre-defined joints. The block models and joint models are used to simulate an injection treatment of the subterranean zone.

    摘要翻译： 系统，方法和软件可用于模拟骨折治疗。 在一些方面，地下区域的物理分离的岩石块由单独的块模型建模。 每个物理上分开的岩石块的块模型表示岩块的块内力学，例如作为一组离散块元素。 相邻岩石块对之间的相互作用是由单独的关节模型建模的。 每个相邻岩石块对的联合模型表示相邻岩块之间的块间力学，例如作为预定义的关节。 块模型和联合模型用于模拟地下区域的注射处理。

    Formation of devices by epitaxial layer overgrowth
    9.
    发明授权
    Formation of devices by epitaxial layer overgrowth 有权
    通过外延层过度生长形成器件

    公开(公告)号：US08034697B2

    公开(公告)日：2011-10-11

    申请号：US12680872

    申请日：2009-09-18

    申请人： James Fiorenza ,  Anthony Lochtefeld ,  Jie Bai ,  Ji-Soo Park ,  Jennifer Hydrick ,  Jizhong Li ,  Zhiyuan Cheng

    发明人： James Fiorenza ,  Anthony Lochtefeld ,  Jie Bai ,  Ji-Soo Park ,  Jennifer Hydrick ,  Jizhong Li ,  Zhiyuan Cheng

    IPC分类号： H01L21/20 ,  H01L21/36

    CPC分类号： H01L21/02538 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/205 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/1808 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544

    摘要： Methods and structures are provided for formation of devices, e.g., solar cells, on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping (ART) and epitaxial layer overgrowth (ELO). In general, in a first aspect, embodiments of the invention may include a method of forming a structure. The method includes forming a first opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semi-conductor material lattice-mismatched to the first semiconductor material, is formed within the first opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer.

    摘要翻译： 提供了用于通过使用纵横比捕获（ART）和外延层过度生长（ELO）在基底上形成诸如晶格失配的材料的器件（例如太阳能电池）的方法和结构。 通常，在第一方面中，本发明的实施例可以包括形成结构的方法。 该方法包括在设置在包括第一半导体材料的衬底之上的掩模层中形成第一开口。 包括与第一半导体材料晶格失配的第二半导体材料的第一层形成在第一开口内。 第一层具有足以在掩模层的顶表面上方延伸的厚度。 包括第二半导体材料的第二层形成在第一层上并且在掩模层的至少一部分之上。 第一层的垂直生长速率大于第一层的横向生长速率，第二层的横向生长速率大于第二层的垂直生长速率。