CHARGED PARTICLE BEAM DEVICE AND A METHOD OF IMPROVING IMAGE QUALITY OF THE SAME
    1.
    发明申请
    CHARGED PARTICLE BEAM DEVICE AND A METHOD OF IMPROVING IMAGE QUALITY OF THE SAME 有权
    充电颗粒束装置和改进其图像质量的方法

    公开(公告)号:US20120274757A1

    公开(公告)日:2012-11-01

    申请号:US13513280

    申请日:2010-11-08

    IPC分类号: H04N7/18

    摘要: The invention relates to a technique of improving a contrast of a lower-layer pattern in a multi layer by synthesizing detected signals from a plurality of detectors by using an appropriate allocation ratio in accordance with pattern arrangement. In a charged particle beam device capable of improving image quality by using detected images obtained from a plurality of detectors and in a method of improving the image quality, a method of generating one or more output images from detected images corresponding to respective outputs of the detectors that are arranged at different locations is controlled by using information of a pattern direction, an edge strength, or others calculated from a design data or the detected image. In this manner, a detection area of the detected signals can be expanded by using the plurality of detectors, and the image quality such as the contrast can be improved by synthesizing the detected signals by using the pattern direction or the edge strength calculated from the design data or the detected images.

    摘要翻译: 本发明涉及一种通过根据图案布置使用合适的分配比例来合成来自多个检测器的检测信号来提高多层下层图案的对比度的技术。 在能够通过使用从多个检测器获得的检测图像来提高图像质量的带电粒子束装置中,以及提高图像质量的方法中,提供一种从与检测器的各个输出对应的检测图像生成一个或多个输出图像的方法 通过使用从设计数据或检测到的图像计算的图案方向,边缘强度或其他的信息来控制布置在不同位置处的位置。 以这种方式,可以通过使用多个检测器来扩展检测信号的检测区域,并且可以通过使用从设计计算出的图案方向或边缘强度合成检测信号来提高诸如对比度的图像质量 数据或检测到的图像。

    Charged particle beam device and a method of improving image quality of the same
    2.
    发明授权
    Charged particle beam device and a method of improving image quality of the same 有权
    带电粒子束装置及其提高图像质量的方法

    公开(公告)号:US09019362B2

    公开(公告)日:2015-04-28

    申请号:US13513280

    申请日:2010-11-08

    摘要: The invention relates to a technique of improving a contrast of a lower-layer pattern in a multi layer by synthesizing detected signals from a plurality of detectors by using an appropriate allocation ratio in accordance with pattern arrangement. In a charged particle beam device capable of improving image quality by using detected images obtained from a plurality of detectors and in a method of improving the image quality, a method of generating one or more output images from detected images corresponding to respective outputs of the detectors that are arranged at different locations is controlled by using information of a pattern direction, an edge strength, or others calculated from a design data or the detected image. In this manner, a detection area of the detected signals can be expanded by using the plurality of detectors, and the image quality such as the contrast can be improved by synthesizing the detected signals by using the pattern direction or the edge strength calculated from the design data or the detected images.

    摘要翻译: 本发明涉及一种通过根据图案布置使用合适的分配比例来合成来自多个检测器的检测信号来提高多层下层图案的对比度的技术。 在能够通过使用从多个检测器获得的检测图像来提高图像质量的带电粒子束装置中,以及提高图像质量的方法中,提供一种从与检测器的各个输出对应的检测图像生成一个或多个输出图像的方法 通过使用从设计数据或检测到的图像计算的图案方向,边缘强度或其他的信息来控制布置在不同位置处的位置。 以这种方式,可以通过使用多个检测器来扩展检测信号的检测区域,并且可以通过使用从设计计算出的图案方向或边缘强度合成检测信号来提高诸如对比度的图像质量 数据或检测到的图像。

    Scanning Electron Microscope system and Method for Measuring Dimensions of Patterns Formed on Semiconductor Device By Using the System
    3.
    发明申请
    Scanning Electron Microscope system and Method for Measuring Dimensions of Patterns Formed on Semiconductor Device By Using the System 有权
    扫描电子显微镜系统和通过使用系统测量在半导体器件上形成的图案尺寸的方法

    公开(公告)号:US20090212212A1

    公开(公告)日:2009-08-27

    申请号:US12370870

    申请日:2009-02-13

    IPC分类号: G01N23/00

    CPC分类号: G03F1/84 G03F1/86 G03F7/70625

    摘要: The present invention is for providing a scanning electron microscope system adapted to output contour information fitting in with the real pattern edge end of a sample, and is arranged to generate a local projection waveform by projecting the scanning electron microscope image in the tangential direction with respect to the pattern edge at each point of the pattern edge of the scanning electron microscope image, estimate the cross-sectional shape of the pattern transferred on the sample by applying the local projection waveform generated at each point to a library, which has previously been created, correlating the cross-sectional shape with the electron beam signal waveform, obtain position coordinate of the edge end fitting in with the cross-sectional shape, and output the contour of the pattern as a range of position coordinates.

    摘要翻译: 本发明提供一种扫描电子显微镜系统,其适于输出与样品的实际图案边缘端相匹配的轮廓信息,并且被布置成通过相对于扫描电子显微镜图像沿切线方向投影而产生局部投影波形 到扫描电子显微镜图像的图案边缘的每个点处的图案边缘,通过将在每个点处生成的局部投影波形应用到先前已经创建的库来估计在样本上传送的图案的横截面形状 将横截面形状与电子束信号波形相关联,以横截面形状获得边缘端配件的位置坐标,并将图案的轮廓作为位置坐标的范围输出。

    METHOD AND APPARATUS FOR INSPECTING DEFECT OF PATTERN FORMED ON SEMICONDUCTOR DEVICE
    4.
    发明申请
    METHOD AND APPARATUS FOR INSPECTING DEFECT OF PATTERN FORMED ON SEMICONDUCTOR DEVICE 有权
    用于检查形成在半导体器件上的图案的缺陷的方法和装置

    公开(公告)号:US20090208090A1

    公开(公告)日:2009-08-20

    申请号:US12350260

    申请日:2009-01-08

    IPC分类号: G06K9/00

    摘要: In the inspection apparatus for a defect of a semiconductor and the method using it for automatically detecting the defect on a semiconductor wafer and presuming the defect occurrence factor using the circuit design data, a plurality of shapes are formed from the circuit design data by deforming the design data with respect to shape deformation items stipulated for respective defect occurrence factor for comparison with the inspection object circuit pattern. The defect is detected by comparison of the group of shapes formed and the actual pattern. Further, the occurrence factors of these defects are presumed, and the defects are classified according to respective factor.

    摘要翻译: 在半导体缺陷检查装置及其自动检测半导体晶片上的缺陷的方法中,使用电路设计数据设定缺陷发生因子,通过使电路设计数据变形来形成多个形状 相对于与检查对象电路图案进行比较的各个缺陷发生因子规定的形状变形项目的设计数据。 通过比较形成的形状组和实际图案来检测缺陷。 此外,推测出这些缺陷的发生因素,根据各自的因素对缺陷进行分类。

    Scanning electron microscope system and method for measuring dimensions of patterns formed on semiconductor device by using the system
    5.
    发明授权
    Scanning electron microscope system and method for measuring dimensions of patterns formed on semiconductor device by using the system 有权
    扫描电子显微镜系统和通过使用该系统测量在半导体器件上形成的图案的尺寸的方法

    公开(公告)号:US08481936B2

    公开(公告)日:2013-07-09

    申请号:US13348813

    申请日:2012-01-12

    IPC分类号: H01J37/26

    CPC分类号: G03F1/84 G03F1/86 G03F7/70625

    摘要: The present invention is for providing a scanning electron microscope system adapted to output contour information fitting in with the real pattern edge end of a sample, and is arranged to generate a local projection waveform by projecting the scanning electron microscope image in the tangential direction with respect to the pattern edge at each point of the pattern edge of the scanning electron microscope image, estimate the cross-sectional shape of the pattern transferred on the sample by applying the local projection waveform generated at each point to a library, which has previously been created, correlating the cross-sectional shape with the electron beam signal waveform, obtain position coordinate of the edge end fitting in with the cross-sectional shape, and output the contour of the pattern as a range of position coordinates.

    摘要翻译: 本发明提供一种扫描电子显微镜系统,其适于输出与样品的实际图案边缘端相匹配的轮廓信息,并且被布置成通过相对于扫描电子显微镜图像沿切线方向投影而产生局部投影波形 到扫描电子显微镜图像的图案边缘的每个点处的图案边缘,通过将在每个点处生成的局部投影波形应用到先前已经创建的库来估计在样本上传送的图案的横截面形状 将横截面形状与电子束信号波形相关联,以横截面形状获得边缘端配件的位置坐标,并将图案的轮廓作为位置坐标的范围输出。

    SCANNING ELECTRON MICROSCOPE SYSTEM AND METHOD FOR MEASURING DIMENSIONS OF PATTERNS FORMED ON SEMICONDUCTOR DEVICE BY USING THE SYSTEM
    6.
    发明申请
    SCANNING ELECTRON MICROSCOPE SYSTEM AND METHOD FOR MEASURING DIMENSIONS OF PATTERNS FORMED ON SEMICONDUCTOR DEVICE BY USING THE SYSTEM 有权
    扫描电子显微镜系统和通过使用系统测量形成在半导体器件上的图案尺寸的方法

    公开(公告)号:US20120112067A1

    公开(公告)日:2012-05-10

    申请号:US13348813

    申请日:2012-01-12

    IPC分类号: H01J37/28

    CPC分类号: G03F1/84 G03F1/86 G03F7/70625

    摘要: The present invention is for providing a scanning electron microscope system adapted to output contour information fitting in with the real pattern edge end of a sample, and is arranged to generate a local projection waveform by projecting the scanning electron microscope image in the tangential direction with respect to the pattern edge at each point of the pattern edge of the scanning electron microscope image, estimate the cross-sectional shape of the pattern transferred on the sample by applying the local projection waveform generated at each point to a library, which has previously been created, correlating the cross-sectional shape with the electron beam signal waveform, obtain position coordinate of the edge end fitting in with the cross-sectional shape, and output the contour of the pattern as a range of position coordinates.

    摘要翻译: 本发明提供一种扫描电子显微镜系统,其适于输出与样品的实际图案边缘端相匹配的轮廓信息,并且被布置成通过相对于扫描电子显微镜图像沿切线方向投影而产生局部投影波形 到扫描电子显微镜图像的图案边缘的每个点处的图案边缘,通过将在每个点处生成的局部投影波形应用到先前已经创建的库来估计在样本上传送的图案的横截面形状 将横截面形状与电子束信号波形相关联,以横截面形状获得边缘端配件的位置坐标,并将图案的轮廓作为位置坐标的范围输出。

    Method and Apparatus For Inspecting Defect Of Pattern Formed On Semiconductor Device
    7.
    发明申请
    Method and Apparatus For Inspecting Defect Of Pattern Formed On Semiconductor Device 有权
    检测半导体器件形成缺陷的方法和装置

    公开(公告)号:US20120002861A1

    公开(公告)日:2012-01-05

    申请号:US13231394

    申请日:2011-09-13

    IPC分类号: G06K9/00

    摘要: An apparatus and method for inspecting a defect of a circuit pattern formed on a semiconductor wafer includes a defect classifier have a comparison shape forming section for forming a plurality of comparison shapes corresponding to an SEM image of an inspection region by deforming the shape of the circuit pattern in accordance with a plurality of shape deformation rules using design data corresponding to the circuit pattern within the inspection region and a shape similar to the SEM image of the inspection region out of the plurality of comparison shapes formed and selected as the comparison shape, and a shape comparing and classifying section for classifying the SEM image using information of the comparison shape selected in the comparison shape forming section and the inspection shape of the circuit pattern of the SEM image of the inspection region.

    摘要翻译: 用于检查形成在半导体晶片上的电路图案的缺陷的装置和方法包括:缺陷分类器,具有比较形状形成部,用于通过使电路的形状变形来形成与检查区域的SEM图像对应的多个比较形状 使用与检查区域内的电路图案相对应的设计数据的多个形状变形规则的形状以及形成和选择为比较形状的多个比较形状中的检查区域的SEM图像的形状,以及 形状比较和分类部分,用于使用在比较形状形成部分中选择的比较形状的信息和检查区域的SEM图像的电路图案的检查形状来对SEM图像进行分类。

    CHARGED PARTICLE BEAM DEVICE
    8.
    发明申请
    CHARGED PARTICLE BEAM DEVICE 有权
    充电颗粒光束装置

    公开(公告)号:US20120104254A1

    公开(公告)日:2012-05-03

    申请号:US13146436

    申请日:2010-01-26

    IPC分类号: H01J37/26

    摘要: A charged particle beam device enabling prevention of degradation of reproducibility of measurement caused by an increase of the beam diameter attributed to an image shift and having a function of dealing with device-to-device variation. The charged particle beam device is used for measuring the dimensions of a pattern on a specimen using a line profile obtained by detecting secondary charged particles emitted from the specimen when the specimen is scanned with a primary charged particle beam converged on the specimen. A lookup table in which the position of image shift and the variation of the beam diameter are associated is prepared in advance by actual measurement or calculation and registered. When the dimensions are measured, image processing is carried out so as to correct the line profile for the variation of the beam diameter while the lookup table is referenced, and thereby the situation where the beam diameter is effectively equal is produced irrespective of the position of the image shift. Whit this, measurement by the charged particle beam excellent reproducibility can be carried out.

    摘要翻译: 一种带电粒子束装置,其能够防止由于图像偏移引起的光束直径的增加而导致的测量再现性的劣化,并且具有处理器件到器件变化的功能。 带电粒子束装置用于通过使用聚集在样本上的初级带电粒子束扫描样本时检测从样本发射的二次带电粒子而获得的线轮廓来测量样品上的图案的尺寸。 通过实际测量或计算预先准备其中图像偏移的位置和光束直径的变化相关联的查找表并注册。 当测量尺寸时,执行图像处理,以便在参考查找表时校正用于变化光束直径的线轮廓,从而产生光束直径有效相等的情况,而与 图像偏移。 这样,可以进行通过带电粒子束测量的优异的再现性。

    Method and apparatus for inspecting defect of pattern formed on semiconductor device
    9.
    发明授权
    Method and apparatus for inspecting defect of pattern formed on semiconductor device 有权
    用于检查在半导体器件上形成的图案的缺陷的方法和装置

    公开(公告)号:US08045789B2

    公开(公告)日:2011-10-25

    申请号:US12350260

    申请日:2009-01-08

    IPC分类号: G06K9/00

    摘要: In the inspection apparatus for a defect of a semiconductor and the method using it for automatically detecting the defect on a semiconductor wafer and presuming the defect occurrence factor using the circuit design data, a plurality of shapes are formed from the circuit design data by deforming the design data with respect to shape deformation items stipulated for respective defect occurrence factor for comparison with the inspection object circuit pattern. The defect is detected by comparison of the group of shapes formed and the actual pattern. Further, the occurrence factors of these defects are presumed, and the defects are classified according to respective factor.

    摘要翻译: 在半导体缺陷检查装置及其自动检测半导体晶片上的缺陷的方法中,使用电路设计数据设定缺陷发生因子,通过使电路设计数据变形来形成多个形状 相对于与检查对象电路图案进行比较的各个缺陷发生因子规定的形状变形项目的设计数据。 通过比较形成的形状组和实际图案来检测缺陷。 此外,推测出这些缺陷的发生因素,根据各自的因素对缺陷进行分类。

    Method and apparatus for measuring three-dimensional shape of specimen by using SEM
    10.
    发明授权
    Method and apparatus for measuring three-dimensional shape of specimen by using SEM 有权
    用SEM测量样品三维形状的方法和装置

    公开(公告)号:US07230243B2

    公开(公告)日:2007-06-12

    申请号:US11156478

    申请日:2005-06-21

    CPC分类号: H01J37/28 H01J2237/2814

    摘要: The present invention relates to a method and apparatus for measuring a three-dimensional profile using a SEM, capable of accurately measuring the three-dimensional profile of even a flat surface or a nearly vertical surface based on the inclination angle dependence of the amount of secondary electron image signal detected by the SEM. Specifically, a tilt image obtaining unit obtains a tilt image (a tilt secondary electron image) I(2) of flat regions a and c1 on a pattern to be measured by using an electron beam incident on the pattern from an observation direction φ(2). Then, profile measuring units presume the slope (or surface inclination angle) at each point on the pattern based on the obtained tilt image and integrate successively each presumed slope value (or surface inclination angle value) to measure three-dimensional profiles S2a and S2c. This arrangement allows a three-dimensional profile to be accurately measured.

    摘要翻译: 本发明涉及一种用于使用SEM测量三维轮廓的方法和装置,其能够基于二次侧的量的倾斜角度依赖性精确地测量均匀的平面或几乎垂直的表面的三维轮廓 电子图像信号由SEM检测。 具体地说,倾斜图像获取单元通过使用从观察方向phi入射到图案上的电子束来获得待测图案上的平坦区域a和c 1的倾斜图像(倾斜二次电子图像)I(2) 2)。 然后,轮廓测量单元基于所获得的倾斜图像来假设在图案上的每个点处的斜率(或表面倾斜角),并且连续地积分每个假设的斜率值(或表面倾斜角值),以测量三维轮廓S 2a和 S 2 c。 这种布置允许精确地测量三维轮廓。