公开(公告)号：US20080043530A1

公开(公告)日：2008-02-21

申请号：US11871441

申请日：2007-10-12

申请人： Tomoharu TANAKA ,  Jian CHEN

发明人： Tomoharu TANAKA ,  Jian CHEN

IPC分类号： G11C16/04

CPC分类号： G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/12 ,  G11C16/34 ,  G11C16/3418 ,  G11C16/3427 ,  G11C16/3459 ,  G11C16/3481 ,  G11C2211/5621 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

摘要： A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell and a write circuit for writing data in the memory cell, the write circuit writing a data in the memory cells by supplying a write voltage Vpgm and a write control voltage VBL to the memory cell, continuing the writing of the data in the memory cell by changing the value of the write control voltage VBL in response to an advent of a first write state of the memory cell and inhibiting any operation of writing a data to the memory cell by further changing the value of the write control voltage VBL to Vdd in response to an advent of a second write state of the memory cell.

摘要翻译： 非易失性半导体存储器件包括电数据可重写非易失性半导体存储单元和用于在存储单元中写入数据的写入电路，写入电路通过提供写入电压Vpgm和写入控制将数据写入存储单元 电压VBL到存储器单元，响应于存储单元的第一写入状态的到来改变写入控制电压VBL的值，继续写入存储单元中的数据，并且禁止写入数据的任何操作 该存储单元响应于存储单元的第二写入状态的进入而进一步将写入控制电压VBL的值改变为Vdd。

公开(公告)号：US20110090741A1

公开(公告)日：2011-04-21

申请号：US12967227

申请日：2010-12-14

申请人： Tomoharu Tanaka ,  Jian CHEN

发明人： Tomoharu Tanaka ,  Jian CHEN

IPC分类号： G11C16/10

CPC分类号： G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/12 ,  G11C16/34 ,  G11C16/3418 ,  G11C16/3427 ,  G11C16/3459 ,  G11C16/3481 ,  G11C2211/5621 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

摘要： A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell and a write circuit for writing data in the memory cell, the write circuit writing a data in the memory cells by supplying a write voltage Vpgm and a write control voltage VBL to the memory cell, continuing the writing of the data in the memory cell by changing the value of the write control voltage VBL in response to an advent of a first write state of the memory cell and inhibiting any operation of writing a data to the memory cell by further changing the value of the write control voltage VBL to Vdd in response to an advent of a second write state of the memory cell.

摘要翻译： 非易失性半导体存储器件包括电数据可重写非易失性半导体存储单元和用于在存储单元中写入数据的写入电路，写入电路通过提供写入电压Vpgm和写入控制将数据写入存储单元 电压VBL到存储器单元，响应于存储单元的第一写入状态的到来改变写入控制电压VBL的值，继续写入存储单元中的数据，并且禁止写入数据的任何操作 该存储单元响应于存储单元的第二写入状态的进入而进一步将写入控制电压VBL的值改变为Vdd。

公开(公告)号：US20100118607A1

公开(公告)日：2010-05-13

申请号：US12652418

申请日：2010-01-05

申请人： Tomoharu TANAKA ,  Jian CHEN

发明人： Tomoharu TANAKA ,  Jian CHEN

IPC分类号： G11C16/06 ,  G11C16/04

CPC分类号： G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/12 ,  G11C16/34 ,  G11C16/3418 ,  G11C16/3427 ,  G11C16/3459 ,  G11C16/3481 ,  G11C2211/5621 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

摘要： A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell and a write circuit for writing data in the memory cell, the write circuit writing a data in the memory cells by supplying a write voltage Vpgm and a write control voltage VBL to the memory cell, continuing the writing of the data in the memory cell by changing the value of the write control voltage VBL in response to an advent of a first write state of the memory cell and inhibiting any operation of writing a data to the memory cell by further changing the value of the write control voltage VBL to Vdd in response to an advent of a second write state of the memory cell.

摘要翻译： 非易失性半导体存储器件包括电数据可重写非易失性半导体存储单元和用于在存储单元中写入数据的写入电路，写入电路通过提供写入电压Vpgm和写入控制将数据写入存储单元 电压VBL到存储器单元，响应于存储单元的第一写入状态的到来改变写入控制电压VBL的值，继续写入存储单元中的数据，并且禁止写入数据的任何操作 该存储单元响应于存储单元的第二写入状态的进入而进一步将写入控制电压VBL的值改变为Vdd。

公开(公告)号：US20120236657A1

公开(公告)日：2012-09-20

申请号：US13482577

申请日：2012-05-29

申请人： Tomoharu TANAKA ,  Jian CHEN

发明人： Tomoharu TANAKA ,  Jian CHEN

IPC分类号： G11C16/10

CPC分类号： G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/12 ,  G11C16/34 ,  G11C16/3418 ,  G11C16/3427 ,  G11C16/3459 ,  G11C16/3481 ,  G11C2211/5621 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

摘要： A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell and a write circuit for writing data in the memory cell, the write circuit writing a data in the memory cells by supplying a write voltage Vpgm and a write control voltage VBL to the memory cell, continuing the writing of the data in the memory cell by changing the value of the write control voltage VBL in response to an advent of a first write state of the memory cell and inhibiting any operation of writing a data to the memory cell by further changing the value of the write control voltage VBL to Vdd in response to an advent of a second write state of the memory cell.

摘要翻译： 非易失性半导体存储器件包括电数据可重写非易失性半导体存储单元和用于在存储单元中写入数据的写入电路，写入电路通过提供写入电压Vpgm和写入控制将数据写入存储单元 电压VBL到存储器单元，响应于存储单元的第一写入状态的到来改变写入控制电压VBL的值，继续写入存储单元中的数据，并且禁止写入数据的任何操作 该存储单元响应于存储单元的第二写入状态的进入而进一步将写入控制电压VBL的值改变为Vdd。

公开(公告)号：US20080298129A1

公开(公告)日：2008-12-04

申请号：US12168283

申请日：2008-07-07

申请人： Tomoharu TANAKA ,  Jian CHEN

发明人： Tomoharu TANAKA ,  Jian CHEN

IPC分类号： G11C16/12

CPC分类号： G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/12 ,  G11C16/34 ,  G11C16/3418 ,  G11C16/3427 ,  G11C16/3459 ,  G11C16/3481 ,  G11C2211/5621 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

摘要： A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell and a write circuit for writing data in the memory cell, the write circuit writing a data in the memory cells by supplying a write voltage Vpgm and a write control voltage VBL to the memory cell, continuing the writing of the data in the memory cell by changing the value of the write control voltage VBL in response to an advent of a first write state of the memory cell and inhibiting any operation of writing a data to the memory cell by further changing the value of the write control voltage VBL to Vdd in response to an advent of a second write state of the memory cell.

摘要翻译： 非易失性半导体存储器件包括电数据可重写非易失性半导体存储单元和用于在存储单元中写入数据的写入电路，写入电路通过提供写入电压Vpgm和写入控制将数据写入存储单元 电压VBL到存储器单元，响应于存储单元的第一写入状态的到来改变写入控制电压VBL的值，继续写入存储单元中的数据，并且禁止写入数据的任何操作 该存储单元响应于存储单元的第二写入状态的进入而进一步将写入控制电压VBL的值改变为Vdd。

公开(公告)号：US20130010502A1

公开(公告)日：2013-01-10

申请号：US13523348

申请日：2012-06-14

申请人： Jian CHEN

发明人： Jian CHEN

IPC分类号： H02M3/335

CPC分类号： H02M3/3387 ,  H02M1/38 ,  Y02B70/1433

摘要： A switching regulator related to aspects of the invention can include an auxiliary winding for monitoring the voltage across the primary winding of a transformer, a differentiation detecting circuit that detects the timing of reversal start or reversal end of the signal detected by the auxiliary winding and a dead time adjusting circuit that receives a signal to trigger turn OFF of a switch or a switch and, after passing a predetermined delay time from the detection of the signal, generates a signal to trigger turn ON of the switch or the switch. The differentiation detecting circuit can confirm current transfer between body diodes. The dead time adjusting circuit can adjust a dead time to deliver the signal after a predetermined time from the confirmation of the current transfer. In some aspects of the invention, occurrence of hard switching and short-circuit current can be suppressed.

摘要翻译： 与本发明的方面相关的开关调节器可以包括用于监测变压器的初级绕组两端的电压的辅助绕组，检测由辅助绕组检测到的信号的反转开始或反转结束的定时的微分检测电路，以及 停止时间调整电路，其接收信号以触发开关或开关的断开，并且在经过来自信号检测的预定延迟时间之后，产生触发开关或开关的接通信号。 差分检测电路可以确认体二极管之间的电流传输。 死区时间调整电路可以在从当前传送的确认之后的预定时间之后调整死区时间以传送信号。 在本发明的某些方面，可以抑制硬切换和短路电流的发生。

公开(公告)号：US20120036232A1

公开(公告)日：2012-02-09

申请号：US13252824

申请日：2011-10-04

申请人： Guangyu SHI ,  Hao GONG ,  Jian CHEN

发明人： Guangyu SHI ,  Hao GONG ,  Jian CHEN

IPC分类号： G06F15/177

CPC分类号： H04L67/16 ,  H04L61/1582 ,  H04L61/1588 ,  H04L67/104 ,  H04L67/1046 ,  H04L67/1065 ,  H04L67/1076 ,  H04W8/08 ,  H04W40/20

摘要： The embodiment of the present invention provides a method for establishing a route, which includes searching a target node by a node from a first level node group according to first level route information, returning to query a result or data saved by the target node if the target node is found, otherwise executing the following step; searching a target node by the node from a higher level node group according to higher level route information, returning to query a result or the data saved by the target node if the target node is found, otherwise repeating the step. Through the hierarchical communication system, most of the flows of daily service operations in the communication network are limited within a small region, thereby preventing from excessively occupying the band width of a backbone network being originally not wide enough.

摘要翻译： 本发明的实施例提供了一种建立路由的方法，其包括根据第一级路由信息从第一级节点组中的节点搜索目标节点，返回查询结果或由目标节点保存的数据，如果 找到目标节点，否则执行以下步骤; 根据较高级别的路由信息​​从上一级节点组中的节点搜索目标节点，如果找到目标节点，返回查询结果或目标节点保存的数据，否则重复该步骤。 通过分层通信系统，通信网络中日常业务运行的大部分流量在小区域内受到限制，从而防止过度占据骨干网络的带宽原本不够宽。

公开(公告)号：US20100184439A1

公开(公告)日：2010-07-22

申请号：US12748905

申请日：2010-03-29

申请人： Jian CHEN ,  Xu ZENG

发明人： Jian CHEN ,  Xu ZENG

IPC分类号： H04W36/00

CPC分类号： H04W36/0061 ,  H04W36/04 ,  H04W48/16 ,  H04W84/045

摘要： The present invention discloses a method, an apparatus and a system for reselecting or handing over to a cell. The method includes: querying, by a user equipment, a current macro cell in an identification list of neighboring macro cell(s) of an accessible AP, and determining that the accessible AP is included in the current macro cell; acquiring, by the user equipment, AP cell information of the accessible AP included in the current macro cell, and measuring the accessible AP cell included in the current macro cell based on the AP cell information; and reselecting, by the user equipment, an AP cell that meets a reselection requirement base on the measurement result and is included in the current macro cell, or handing over to an AP cell that meets a handover requirement base on the measurement result and is included in the current macro cell.

摘要翻译： 本发明公开了一种用于重新选择或移交给小区的方法，装置和系统。 该方法包括：通过用户设备查询可访问AP的相邻宏小区的识别列表中的当前宏小区，并确定可访问AP包括在当前宏小区中; 由用户设备获取包括在当前宏小区中的可访问AP的AP小区信息，并且基于AP小区信息测量包括在当前宏小区中的可接入AP小区; 并且由用户设备重新选择满足基于测量结果的重选要求的AP小区，并且包括在当前宏小区中，或者根据测量结果将其移交到满足切换要求的AP小区，并且包括 在当前宏单元格中。

公开(公告)号：US20100172157A1

公开(公告)日：2010-07-08

申请号：US12605637

申请日：2009-10-26

申请人： Jian CHEN ,  Koji SONOBE

发明人： Jian CHEN ,  Koji SONOBE

IPC分类号： H02M3/335

CPC分类号： H02M3/337 ,  H02M3/33592 ,  H02M2001/0032 ,  H02M2001/0058 ,  Y02B70/1475 ,  Y02B70/1491 ,  Y02B70/16

摘要： The invention provides a switching power supply device which can detect a light load state on a pulse-by-pulse basis without worsening power efficiency. In a synchronous control circuit, for each timing of the turning-on of main switching elements, the delay time Tdif of the conduction timing of internal diodes Ds determined according to the magnitude of the load LD is detected by a comparator, a reference time pulse Tsrs having a prescribed time width is generated by a load judgment circuit, and the logical product of the two is generated by an AND circuit. By this means, the load is regarded as being a light load when the delay time Tdif is longer than the reference time pulse Tsrs, and the synchronous rectification MOSFETs Qs are not turned on.

摘要翻译： 本发明提供一种开关电源装置，其可以逐脉冲地检测轻负载状态，而不会降低功率效率。 在同步控制电路中，对于主开关元件导通的每个定时，根据负载LD的大小确定的内部二极管Ds的导通定时的延迟时间Tdif由比较器检测，参考时间脉冲 具有规定时间宽度的Tsrs由负载判断电路产生，并且由AND电路产生两者的逻辑积。 通过这种方式，当延迟时间Tdif比参考时间脉冲Tsrs长时，负载被认为是轻负载，同步整流MOSFET Qs不导通。

公开(公告)号：US20090259758A1

公开(公告)日：2009-10-15

申请号：US12487727

申请日：2009-06-19

申请人： Jian CHEN ,  Hao WANG ,  Hongguang GUAN

发明人： Jian CHEN ,  Hao WANG ,  Hongguang GUAN

IPC分类号： G06F15/16

CPC分类号： H04L65/1066 ,  H04L65/1096 ,  H04L65/60

摘要： A method for session migration includes: sending a request for transferring a session from a source terminal to a target terminal; receiving, by a media transfer controller, the request; and transferring, by the media transfer controller, the session to the target terminal by negotiating with the media relay. A system for session migration is also provided. Through the present disclosure, speed and efficiency for a session migration service are improved.

摘要翻译： 一种用于会话迁移的方法包括：发送从源终端向目标终端传送会话的请求; 由媒体传输控制器接收请求; 并由媒体传送控制器通过与媒体中继器协商将该会话传送到目标终端。 还提供了一个用于会话迁移的系统。 通过本公开，提高了会话迁移服务的速度和效率。