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    ELECTRODE MOUNTING STRUCTURE OF SURFACE TREATMENT APPARATUS
    1.
    发明申请
    ELECTRODE MOUNTING STRUCTURE OF SURFACE TREATMENT APPARATUS 有权
    表面处理装置的电极安装结构

    公开(公告)号：US20090321253A1

    公开(公告)日：2009-12-31

    申请号：US12490034

    申请日：2009-06-23

    申请人： Tomohiro ASOU ,  Seiya KUNIOKA ,  Hitoshi MURAMATSU ,  Nobuyuki SYZUKI ,  Akira Ishibashi ,  Makoto Kawai

    发明人： Tomohiro ASOU ,  Seiya KUNIOKA ,  Hitoshi MURAMATSU ,  Nobuyuki SYZUKI ,  Akira Ishibashi ,  Makoto Kawai

    IPC分类号： C25D17/10

    CPC分类号： C25D5/34 ,  C25D7/04 ,  C25D17/12 ,  C25F3/02 ,  C25F7/00

    摘要： An electrode mounting structure of a surface treatment apparatus in which a metal electrode is disposed so as to oppose to an inner-peripheral surface of a cylinder, the electrode and the cylinder are energized in a state where treatment liquid is interposed between the electrode and the cylinder inner-peripheral surface so as to perform pre-plating or plating to the cylinder inner-peripheral surface, and the metal electrode is detachably attached to a metal electrode holder member. The structure includes a resin coupler having a threaded portion engaged with a threaded portion formed on the electrode holder member.

    摘要翻译： 一种表面处理装置的电极安装结构，其中金属电极设置成与气缸的内周面相对设置，电极和气缸在处理液介于电极和电极之间的状态下通电 气缸内周面，以便对气缸内周面进行预镀或电镀，并且金属电极可拆卸地安装在金属电极保持构件上。 该结构包括树脂耦合器，其具有与形成在电极保持器构件上的螺纹部分接合的螺纹部分。

    Electrode mounting structure of surface treatment apparatus
    2.
    发明授权
    Electrode mounting structure of surface treatment apparatus 有权
    表面处理装置的电极安装结构

    公开(公告)号：US08057647B2

    公开(公告)日：2011-11-15

    申请号：US12490034

    申请日：2009-06-23

    申请人： Tomohiro Asou ,  Seiya Kunioka ,  Hitoshi Muramatsu ,  Nobuyuki Suzuki ,  Akira Ishibashi ,  Makoto Kawai

    发明人： Tomohiro Asou ,  Seiya Kunioka ,  Hitoshi Muramatsu ,  Nobuyuki Suzuki ,  Akira Ishibashi ,  Makoto Kawai

    IPC分类号： C25B9/02 ,  C25C7/02 ,  C25D17/06

    CPC分类号： C25D5/34 ,  C25D7/04 ,  C25D17/12 ,  C25F3/02 ,  C25F7/00

    摘要： An electrode mounting structure of a surface treatment apparatus in which a metal electrode is disposed so as to oppose to an inner-peripheral surface of a cylinder, the electrode and the cylinder are energized in a state where treatment liquid is interposed between the electrode and the cylinder inner-peripheral surface so as to perform pre-plating or plating to the cylinder inner-peripheral surface, and the metal electrode is detachably attached to a metal electrode holder member. The structure includes a resin coupler having a threaded portion engaged with a threaded portion formed on the electrode holder member.

    摘要翻译： 一种表面处理装置的电极安装结构，其中金属电极设置成与气缸的内周面相对设置，电极和气缸在处理液介于电极和电极之间的状态下通电 气缸内周面，以便对气缸内周面进行预镀或电镀，并且金属电极可拆卸地安装在金属电极保持构件上。 该结构包括树脂耦合器，其具有与形成在电极保持器构件上的螺纹部分接合的螺纹部分。

    Method for manufacturing SOI wafer
    4.
    发明授权
    Method for manufacturing SOI wafer 有权
    制造SOI晶圆的方法

    公开(公告)号：US08268700B2

    公开(公告)日：2012-09-18

    申请号：US12153160

    申请日：2008-05-14

    申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

    发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

    IPC分类号： H01L21/30

    CPC分类号： H01L21/76254

    摘要： There is disclosed a method for manufacturing an SOI wafer comprising at least: implanting a hydrogen ion, a rare gas ion, or both the ions into a donor wafer formed of a silicon wafer or a silicon wafer having an oxide film formed on a surface thereof from a surface of the donor wafer, thereby forming an ion implanted layer; performing a plasma activation treatment with respect to at least one of an ion implanted surface of the donor wafer and a surface of a handle wafer, the surface of the handle wafer is to be bonded to the ion implanted surface; closely bonding these surfaces to each other; mechanically delaminating the donor wafer at the ion implanted layer as a boundary and thereby reducing a film thickness thereof to provide an SOI layer, and performing a heat treatment at 600 to 1000° C.; and polishing a surface of the SOI layer for 10 to 50 nm based on chemical mechanical polishing.A method for manufacturing with excellent productivity an SOI wafer having an SOI layer with a mirror-finished surface and high film thickness uniformity can be provided.

    摘要翻译： 公开了一种制造SOI晶片的方法，该方法至少包括：将氢离子，稀有气体离子或两者离子注入到由硅晶片或具有在其表面上形成的氧化膜的硅晶片形成的施主晶片中 从施主晶片的表面，从而形成离子注入层; 对施主晶片的离子注入表面和处理晶片的表面中的至少一个进行等离子体激活处理，把手晶片的表面与离子注入表面结合; 将这些表面彼此紧密结合; 以离子注入层的施主晶片作为边界进行机械分层，由此降低其膜厚以提供SOI层，并在600〜1000℃下进行热处理。 并且基于化学机械抛光将SOI层的表面抛光10至50nm。 可以提供具有优异的生产率的具有SOI层的具有镜面精加工表面和高膜厚均匀性的SOI晶片的方法。

    METHOD FOR MANUFACTURING BONDED SUBSTRATE
    7.
    发明申请
    METHOD FOR MANUFACTURING BONDED SUBSTRATE 有权
    制造粘结基板的方法

    公开(公告)号：US20110104871A1

    公开(公告)日：2011-05-05

    申请号：US12934788

    申请日：2009-04-10

    申请人： Yuji Tobisaka ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Shoji Akiyama ,  Hiroshi Tamura

    发明人： Yuji Tobisaka ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Shoji Akiyama ,  Hiroshi Tamura

    IPC分类号： H01L21/762

    CPC分类号： H01L21/187 ,  H01L21/76254

    摘要： Provided is a method for manufacturing a bonded wafer with a good thin film over the entire substrate surface, especially in the vicinity of the lamination terminal point. The method for manufacturing a bonded wafer comprises at least the following steps of: forming an ion-implanted region by implanting a hydrogen ion or a rare gas ion, or the both types of ions from a surface of a first substrate which is a semiconductor substrate; subjecting at least one of an ion-implanted surface of the first substrate and a surface of a second substrate to be attached to a surface activation treatment; laminating the ion-implanted surface of the first substrate and the surface of the second substrate in an atmosphere with a humidity of 30% or less and/or a moisture content of 6 g/m3 or less; and a splitting the first substrate at the ion-implanted region so as to reduce thickness of the first substrate, thereby manufacturing a bonded wafer with a thin film on the second substrate.

    摘要翻译： 提供一种在整个基板表面上，特别是在层叠终点附近制造具有良好薄膜的接合晶片的方法。 制造接合晶片的方法至少包括以下步骤：通过从作为半导体衬底的第一衬底的表面注入氢离子或稀有气体离子或两种离子形成离子注入区域 ; 对第一基板的离子注入表面和第二基板的表面中的至少一个进行表面活化处理; 将第一基板的离子注入表面和第二基板的表面在湿度为30％以下和/或6g / m 3以下的气氛中层压; 以及在离子注入区域处分裂第一衬底以便减小第一衬底的厚度，由此在第二衬底上制造具有薄膜的接合晶片。

    Method for manufacturing pyrolytic boron nitride composite substrate
    8.
    发明授权
    Method for manufacturing pyrolytic boron nitride composite substrate 有权
    制造热解氮化硼复合基板的方法

    公开(公告)号：US07879175B2

    公开(公告)日：2011-02-01

    申请号：US12078276

    申请日：2008-03-28

    申请人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Shoji Akiyama

    发明人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Shoji Akiyama

    IPC分类号： B32B38/10

    CPC分类号： H01L21/76254 ,  C23C14/48

    摘要： Wettability of a PBN material surface with respect to a metal is improved to expand use applications. Hydrogen ions are implanted into a surface of a silicon substrate 10 to form an ion implanted region 11 at a predetermined depth near a surface of the silicon substrate 10, and a plasma treatment or an ozone treatment is performed with respect to a main surface of the silicon substrate 10 for the purpose of surface cleaning or surface activation. The main surfaces of the silicon substrate 10 and a PBN substrate 20 subjected to the surface treatment are appressed against each other to be bonded at a room temperature, and an external impact shock is given to the bonded substrate to mechanically delaminate a silicon film 12 from a bulk 13 of the silicon substrate to be transferred. An obtained PBN composite substrate 30 is diced to form a chip having a desired size, and a refractory metal is metallized on the silicon film 12 side to be connected with a wiring material.

    摘要翻译： PBN材料表面相对于金属的润湿性得到改善以扩大使用应用。 将氢离子注入到硅衬底10的表面中以在硅衬底10的表面附近的预定深度处形成离子注入区11，并且相对于硅衬底10的主表面进行等离子体处理或臭氧处理 硅基板10，用于表面清洁或表面活化。 经过表面处理的硅衬底10和PBN衬底20的主表面在室温下相互粘合，并且对键合衬底施加外部冲击冲击，从而将硅膜12从 待转移的硅衬底的体积13。 将获得的PBN复合基板30切割成具有所需尺寸的芯片，并且将难熔金属在硅膜12侧金属化以与布线材料连接。

    Method for manufacturing semiconductor substrate
    9.
    发明申请
    Method for manufacturing semiconductor substrate 有权
    半导体衬底的制造方法

    公开(公告)号：US20100311221A1

    公开(公告)日：2010-12-09

    申请号：US12805582

    申请日：2010-08-06

    申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

    发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

    IPC分类号： H01L21/762

    CPC分类号： H01L21/76254 ,  H01L27/1266 ,  H01L29/78603

    摘要： Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 at a dosage of 1.5×1017 atoms/cm2 or higher to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 and the low melting glass substrate 20 are bonded together. The bonded substrate is heated at relatively low temperature, 120° C. or higher and 250° C. or lower (below a melting point of the support substrate). Further, an external shock is applied to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the heat-treated bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that a semiconductor substrate can be fabricated. There can be provided a semiconductor substrate in which a high-quality silicon thin film is transferred onto a substrate made of a low melting point material.

    摘要翻译： 将氢离子以1.5×10 17原子/ cm 2或更高的剂量注入单晶Si衬底10的表面（主表面），以形成氢离子注入层（离子注入损伤层）11。 氢离子注入，形成氢离子注入边界12。 单晶Si衬底10和低熔点玻璃衬底20结合在一起。 键合衬底在相对较低的温度，120℃或更高和250℃或更低（低于支撑衬底的熔点）下加热。 此外，施加外部冲击以沿着经热处理的键合衬底的单晶Si衬底10的氢离子注入边界12将Si晶体膜分层。 然后，对所得的硅薄膜13的表面进行抛光以去除损坏部分，从而可以制造半导体衬底。 可以提供一种半导体衬底，其中将高质量的硅薄膜转移到由低熔点材料制成的衬底上。

    METHOD OF MANUFACTURING LAMINATED WAFER BY HIGH TEMPERATURE LAMINATING METHOD
    10.
    发明申请
    METHOD OF MANUFACTURING LAMINATED WAFER BY HIGH TEMPERATURE LAMINATING METHOD 有权
    通过高温层压法制造层压陶瓷的方法

    公开(公告)号：US20100244182A1

    公开(公告)日：2010-09-30

    申请号：US12685194

    申请日：2010-01-11

    申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Yoshihiro Nojima

    发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Yoshihiro Nojima

    IPC分类号： H01L29/02 ,  H01L21/762

    CPC分类号： H01L21/84 ,  H01L21/76254 ,  H01L21/76256

    摘要： To provide a method of manufacturing a laminated wafer by which a strong coupling is achieved between wafers made of different materials having a large difference in thermal expansion coefficient without lowering a maximum heat treatment temperature as well as in which cracks or chips of the wafer does not occur. A method of manufacturing a laminated wafer 7 by forming a silicon film layer on a surface 4 of an insulating substrate 3 comprising the steps in the following order of: applying a surface activation treatment to both a surface 2 of a silicon wafer 1 or a silicon wafer 1 to which an oxide film is layered and a surface 4 of the insulating substrate 3 followed by laminating in an atmosphere of temperature exceeding 50° C. and lower than 300° C., applying a heat treatment to a laminated wafer 5 at a temperature of 200° C. to 350° C., and thinning the silicon wafer 1 by a combination of grinding, etching and polishing to form a silicon film layer.

    摘要翻译： 为了提供一种制造层叠晶片的方法，在不降低最大热处理温度的情况下，不会降低最大热处理温度以及晶片的裂纹或芯片不会在不具有热膨胀系数差的不同材料制成的晶片之间实现强耦合， 发生。 一种通过在绝缘基板3的表面4上形成硅膜层来制造层压晶片7的方法，包括以下顺序的步骤：对硅晶片1或硅的表面2施加表面活化处理 叠层氧化膜的晶片1和绝缘基板3的表面4，然后在温度超过50℃且低于300℃的气氛中层压，在层叠晶片5上进行热处理 温度为200〜350℃，通过研磨，蚀刻和研磨的组合使硅晶片1变薄，形成硅膜层。