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137 条记录 (耗时 0.06 秒)

    Method for manufacturing SOI wafer
    7.
    发明授权
    Method for manufacturing SOI wafer 有权
    制造SOI晶圆的方法

    公开(公告)号：US08268700B2

    公开(公告)日：2012-09-18

    申请号：US12153160

    申请日：2008-05-14

    申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

    发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

    IPC分类号： H01L21/30

    CPC分类号： H01L21/76254

    摘要： There is disclosed a method for manufacturing an SOI wafer comprising at least: implanting a hydrogen ion, a rare gas ion, or both the ions into a donor wafer formed of a silicon wafer or a silicon wafer having an oxide film formed on a surface thereof from a surface of the donor wafer, thereby forming an ion implanted layer; performing a plasma activation treatment with respect to at least one of an ion implanted surface of the donor wafer and a surface of a handle wafer, the surface of the handle wafer is to be bonded to the ion implanted surface; closely bonding these surfaces to each other; mechanically delaminating the donor wafer at the ion implanted layer as a boundary and thereby reducing a film thickness thereof to provide an SOI layer, and performing a heat treatment at 600 to 1000° C.; and polishing a surface of the SOI layer for 10 to 50 nm based on chemical mechanical polishing.A method for manufacturing with excellent productivity an SOI wafer having an SOI layer with a mirror-finished surface and high film thickness uniformity can be provided.

    摘要翻译： 公开了一种制造SOI晶片的方法，该方法至少包括：将氢离子，稀有气体离子或两者离子注入到由硅晶片或具有在其表面上形成的氧化膜的硅晶片形成的施主晶片中 从施主晶片的表面，从而形成离子注入层; 对施主晶片的离子注入表面和处理晶片的表面中的至少一个进行等离子体激活处理，把手晶片的表面与离子注入表面结合; 将这些表面彼此紧密结合; 以离子注入层的施主晶片作为边界进行机械分层，由此降低其膜厚以提供SOI层，并在600〜1000℃下进行热处理。 并且基于化学机械抛光将SOI层的表面抛光10至50nm。 可以提供具有优异的生产率的具有SOI层的具有镜面精加工表面和高膜厚均匀性的SOI晶片的方法。

    Electrode mounting structure of surface treatment apparatus
    8.
    发明授权
    Electrode mounting structure of surface treatment apparatus 有权
    表面处理装置的电极安装结构

    公开(公告)号：US08057647B2

    公开(公告)日：2011-11-15

    申请号：US12490034

    申请日：2009-06-23

    申请人： Tomohiro Asou ,  Seiya Kunioka ,  Hitoshi Muramatsu ,  Nobuyuki Suzuki ,  Akira Ishibashi ,  Makoto Kawai

    发明人： Tomohiro Asou ,  Seiya Kunioka ,  Hitoshi Muramatsu ,  Nobuyuki Suzuki ,  Akira Ishibashi ,  Makoto Kawai

    IPC分类号： C25B9/02 ,  C25C7/02 ,  C25D17/06

    CPC分类号： C25D5/34 ,  C25D7/04 ,  C25D17/12 ,  C25F3/02 ,  C25F7/00

    摘要： An electrode mounting structure of a surface treatment apparatus in which a metal electrode is disposed so as to oppose to an inner-peripheral surface of a cylinder, the electrode and the cylinder are energized in a state where treatment liquid is interposed between the electrode and the cylinder inner-peripheral surface so as to perform pre-plating or plating to the cylinder inner-peripheral surface, and the metal electrode is detachably attached to a metal electrode holder member. The structure includes a resin coupler having a threaded portion engaged with a threaded portion formed on the electrode holder member.

    摘要翻译： 一种表面处理装置的电极安装结构，其中金属电极设置成与气缸的内周面相对设置，电极和气缸在处理液介于电极和电极之间的状态下通电 气缸内周面，以便对气缸内周面进行预镀或电镀，并且金属电极可拆卸地安装在金属电极保持构件上。 该结构包括树脂耦合器，其具有与形成在电极保持器构件上的螺纹部分接合的螺纹部分。

    METHOD FOR MANUFACTURING BONDED SUBSTRATE
    10.
    发明申请
    METHOD FOR MANUFACTURING BONDED SUBSTRATE 有权
    制造粘结基板的方法

    公开(公告)号：US20110104871A1

    公开(公告)日：2011-05-05

    申请号：US12934788

    申请日：2009-04-10

    申请人： Yuji Tobisaka ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Shoji Akiyama ,  Hiroshi Tamura

    发明人： Yuji Tobisaka ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Shoji Akiyama ,  Hiroshi Tamura

    IPC分类号： H01L21/762

    CPC分类号： H01L21/187 ,  H01L21/76254

    摘要： Provided is a method for manufacturing a bonded wafer with a good thin film over the entire substrate surface, especially in the vicinity of the lamination terminal point. The method for manufacturing a bonded wafer comprises at least the following steps of: forming an ion-implanted region by implanting a hydrogen ion or a rare gas ion, or the both types of ions from a surface of a first substrate which is a semiconductor substrate; subjecting at least one of an ion-implanted surface of the first substrate and a surface of a second substrate to be attached to a surface activation treatment; laminating the ion-implanted surface of the first substrate and the surface of the second substrate in an atmosphere with a humidity of 30% or less and/or a moisture content of 6 g/m3 or less; and a splitting the first substrate at the ion-implanted region so as to reduce thickness of the first substrate, thereby manufacturing a bonded wafer with a thin film on the second substrate.

    摘要翻译： 提供一种在整个基板表面上，特别是在层叠终点附近制造具有良好薄膜的接合晶片的方法。 制造接合晶片的方法至少包括以下步骤：通过从作为半导体衬底的第一衬底的表面注入氢离子或稀有气体离子或两种离子形成离子注入区域 ; 对第一基板的离子注入表面和第二基板的表面中的至少一个进行表面活化处理; 将第一基板的离子注入表面和第二基板的表面在湿度为30％以下和/或6g / m 3以下的气氛中层压; 以及在离子注入区域处分裂第一衬底以便减小第一衬底的厚度，由此在第二衬底上制造具有薄膜的接合晶片。