公开(公告)号：USRE42279E1

公开(公告)日：2011-04-12

申请号：US12341876

申请日：2008-12-22

申请人： Tomohiro Kawase ,  Shinichi Sawada ,  Masami Tatsumi

发明人： Tomohiro Kawase ,  Shinichi Sawada ,  Masami Tatsumi

IPC分类号： C30B9/00

CPC分类号： C30B29/42 ,  C30B11/06 ,  C30B11/12

摘要： A method of preparing a compound semiconductor crystal is able to dope the crystal with carbon with high reproducibility. The method includes the steps of sealing a carbon oxide gas of a predetermined partial pressure and a compound semiconductor material in a gas-impermeable airtight vessel, increasing the temperature of the vessel to melt the compound semiconductor material sealed in the vessel, and then decreasing the temperature of the vessel to solidify the melted compound semiconductor material to grow a compound semiconductor crystal containing a predetermined amount of carbon. With this method, a compound semiconductor crystal with a carbon concentration of 0.1×1015cm−3 to 20×1015cm−3 is prepared with high reproducibility.

摘要翻译： 制备化合物半导体晶体的方法能够以高重现性将碳掺杂。 该方法包括以下步骤：将不规则分压的氧化碳气体和化合物半导体材料密封在不透气体的气密容器中，增加容器的温度以熔化密封在容器中的化合物半导体材料，然后将 使熔融的化合物半导体材料固化，生长含有规定量的碳的化合物半导体晶体。 通过该方法，以高的再现性制备碳浓度为0.1×10 15 cm -3〜20×10 15 cm -3的化合物半导体晶体。

公开(公告)号：US06485563B2

公开(公告)日：2002-11-26

申请号：US09765557

申请日：2001-01-19

申请人： Tomohiro Kawase ,  Shinichi Sawada ,  Masami Tatsumi

发明人： Tomohiro Kawase ,  Shinichi Sawada ,  Masami Tatsumi

IPC分类号： C30B900

CPC分类号： C30B29/42 ,  C30B11/06 ,  C30B11/12

摘要： A method of preparing a compound semiconductor crystal is able to dope the crystal with carbon with high reproducibility. The method includes the steps of sealing a carbon oxide gas of a predetermined partial pressure and a compound semiconductor material in a gas-impermeable airtight vessel, increasing the temperature of the vessel to melt the compound semiconductor material sealed in the vessel, and then decreasing the temperature of the vessel to solidify the melted compound semiconductor material to grow a compound semiconductor crystal containing a predetermined amount of carbon. With this method, a compound semiconductor crystal with a carbon concentration of 0.1×1015cm−3 to 20×1015cm−3 is prepared with high reproducibility.

摘要翻译： 制备化合物半导体晶体的方法能够以高重现性将碳掺杂。 该方法包括以下步骤：将不规则分压的氧化碳气体和化合物半导体材料密封在不透气体的气密容器中，增加容器的温度以熔化密封在容器中的化合物半导体材料，然后将 使熔融的化合物半导体材料固化，生长含有规定量的碳的化合物半导体晶体。 通过该方法，以高的再现性制备碳浓度为0.1×10 15 cm -3〜20×10 15 cm -3的化合物半导体晶体。

公开(公告)号：USRE40662E1

公开(公告)日：2009-03-17

申请号：US10640430

申请日：2003-08-13

申请人： Tomohiro Kawase ,  Shinichi Sawada ,  Masami Tatsumi

发明人： Tomohiro Kawase ,  Shinichi Sawada ,  Masami Tatsumi

IPC分类号： C30B9/00

CPC分类号： C30B29/42 ,  C30B11/06 ,  C30B11/12

摘要： A method of preparing a compound semiconductor crystal is able to dope the crystal with carbon with high reproducibility. The method includes the steps of sealing a carbon oxide gas of a predetermined partial pressure and a compound semiconductor material in a gas-impermeable airtight vessel, increasing the temperature of the vessel to melt the compound semiconductor material sealed in the vessel, and then decreasing the temperature of the vessel to solidify the melted compound semiconductor material to grow a compound semiconductor crystal containing a predetermined amount of carbon. With this method, a compound semiconductor crystal with a carbon concentration of 0.1×1015cm−3 to 20×1015cm−3 is prepared with high reproducibility.

公开(公告)号：US06273947B1

公开(公告)日：2001-08-14

申请号：US09274286

申请日：1999-03-22

申请人： Tomohiro Kawase ,  Shinichi Sawada ,  Masami Tatsumi

发明人： Tomohiro Kawase ,  Shinichi Sawada ,  Masami Tatsumi

IPC分类号： C30B900

CPC分类号： C30B29/42 ,  C30B11/06 ,  C30B11/12

摘要： A method of preparing a compound semiconductor crystal is able to dope the crystal with carbon with high reproducibility. The method includes the steps of sealing a carbon oxide gas of a predetermined partial pressure and a compound semiconductor material in a gas-impermeable airtight vessel, increasing the temperature of the vessel to melt the compound semiconductor material sealed in the vessel, and then decreasing the temperature of the vessel to solidify the melted compound semiconductor material to grow a compound semiconductor crystal containing a predetermined amount of carbon. With this method, a compound semiconductor crystal with a carbon concentration of 0.1×1015 cm−3 to 20×1015 cm−3 is prepared with high reproducibility.

摘要翻译： 制备化合物半导体晶体的方法能够以高重现性将碳掺杂。 该方法包括以下步骤：将不规则分压的氧化碳气体和化合物半导体材料密封在不透气体的气密容器中，增加容器的温度以熔化密封在容器中的化合物半导体材料，然后将 使熔融的化合物半导体材料固化，生长含有规定量的碳的化合物半导体晶体。 通过该方法，以高的再现性制备碳浓度为0.1×10 15 cm -3〜20×10 15 cm -3的化合物半导体晶体。

公开(公告)号：US06572700B2

公开(公告)日：2003-06-03

申请号：US09779097

申请日：2001-02-07

申请人： Tomohiro Kawase ,  Katsushi Hashio ,  Shin-ichi Sawada ,  Masami Tatsumi

发明人： Tomohiro Kawase ,  Katsushi Hashio ,  Shin-ichi Sawada ,  Masami Tatsumi

IPC分类号： C30B2942

CPC分类号： C30B15/00 ,  C30B11/00 ,  C30B29/42 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1096

摘要： An apparatus and method of providing a large semiconductor crystal at a low cost are provided. The apparatus of producing a semiconductor crystal includes a reactor tube having an open end at least one end side, formed of any one material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, and aluminum oxide, or of a composite material with any one material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, boron nitride, aluminum oxide, magnesium oxide, mullite, and carbon as a base, and having an oxidation-proof or airtight film formed on the surface of the base, a kanthal heater arranged around the reactor tube in the atmosphere, a flange attached at the open end to seal the reactor tube, and a crucible mounted in the reactor tube to store material of a semiconductor crystal. The material stored in the crucible is heated and melted to form material melt. The material melt is solidified to grow a semiconductor crystal.

摘要翻译： 提供了一种以低成本提供大型半导体晶体的装置和方法。 制造半导体晶体的装置包括具有开口端至少一端侧的反应器管，由选自碳化硅，氮化硅，氮化铝和氧化铝的任何一种材料形成，或由复合材料 使用选自碳化硅，氮化硅，氮化铝，氮化硼，氧化铝，氧化镁，莫来石和碳作为基底的任何一种材料，并且在其表面上形成有防氧化或气密的膜 基座，在大气中布置在反应器管周围的kanthal加热器，连接在开口端以密封反应器管的凸缘以及安装在反应器管中以存储半导体晶体的材料的坩埚。 储存在坩埚中的材料被加热熔化以形成材料熔体。 材料熔体固化以生长半导体晶体。

公开(公告)号：US6007622A

公开(公告)日：1999-12-28

申请号：US843124

申请日：1997-04-25

申请人： Tomohiro Kawase ,  Masami Tatsumi

发明人： Tomohiro Kawase ,  Masami Tatsumi

IPC分类号： C30B11/00 ,  C30B29/40 ,  C30B29/42 ,  C30B11/04

CPC分类号： C30B11/10 ,  C30B27/00 ,  C30B29/40 ,  C30B29/42

摘要： A method is provided for preparing, with high reproducibility, a carbon-doped group III-V compound semiconductor crystal having favorable electrical characteristics and having impurities removed therefrom, and in which the amount of doped carbon can be adjusted easily during crystal growth. This method includes the steps of: filling a crucible with compound raw material, solid carbon, and boron oxide; sealing the filled crucible gas impermeable material; heating and melting the compound raw material under the sealed state in the airtight vessel; and solidifying the melted compound raw material to grow a carbon-doped compound semiconductor crystal.

摘要翻译： 提供了一种以高再现性制备具有良好电特性并从其中除去杂质的碳掺杂III-V族化合物半导体晶体的方法，其中在晶体生长期间可以容易地调节掺杂碳的量。 该方法包括以下步骤：用复合原料，固体碳和氧化硼填充坩埚; 密封填充坩埚气体不渗透材料; 在密封状态下将复合原料加热并熔化在气密容器中; 并固化熔融的复合原料以生长掺碳化合物半导体晶体。

公开(公告)号：US5830269A

公开(公告)日：1998-11-03

申请号：US653466

申请日：1996-05-24

申请人： Tomohiro Kawase ,  Masami Tatsumi ,  Yoshihiro Wakayama

发明人： Tomohiro Kawase ,  Masami Tatsumi ,  Yoshihiro Wakayama

IPC分类号： C30B11/00 ,  C30B13/18

CPC分类号： C30B29/48 ,  C30B11/002 ,  C30B29/40

摘要： A method is provided for industrially preparing a group II-VI or III-V compound single crystal from a polycrystalline group II-VI or III-V starting compound, such that the resultant single crystal has a small number of crystal defects by effectively preventing polycrystallization. The method includes steps of coating an inner surface of a crucible with a film consisting of powdered solids and a vitreous substance, placing the polycrystalline compound in the coated crucible, placing the crucible in a furnace, heating the crucible with furnace for melting the polycrystalline compound in the crucible, and cooling the crucible and the melted compound for growing a single-crystalline compound. Additionally, the surface of a seed crystal and a gap between the seed crystal and a wall of the crucible may also be coated with a film of powdered solids and a vitreous substance.

摘要翻译： 提供了从多晶II-VI族或III-V族起始化合物工业制备II-VI族或III-V族化合物单晶的方法，使得所得单晶通过有效防止多结晶而具有少量晶体缺陷 。 该方法包括以下步骤：用由粉末状固体和玻璃状物质组成的薄膜涂覆坩埚的内表面，将多晶化合物放置在涂覆的坩埚中，将坩埚放入炉中，用坩埚加热熔化多晶化合物 在坩埚中，并冷却坩埚和用于生长单晶化合物的熔融化合物。 此外，晶种的表面和晶种与坩埚的壁之间的间隙也可以涂覆有粉末状固体和玻璃状物质的膜。

公开(公告)号：USRE39778E1

公开(公告)日：2007-08-21

申请号：US09824965

申请日：2001-04-03

申请人： Tomohiro Kawase ,  Masami Tatsumi

发明人： Tomohiro Kawase ,  Masami Tatsumi

IPC分类号： C30B11/04

CPC分类号： C30B11/10 ,  C30B27/00 ,  C30B29/40 ,  C30B29/42

摘要： A method is provided for preparing, with high reproducibility, a carbon-doped group III-V compound semiconductor crystal having favorable electrical characteristics and having impurities removed therefrom, and in which the amount of doped carbon can be adjusted easily during crystal growth. This method includes the steps of: filling a crucible with compound raw material, solid carbon, and boron oxide; sealing the filled crucible within an airtight vessel formed of a gas impermeable material; heating and melting the compound raw material under the sealed state in the airtight vessel; and solidifying the melted compound raw material to grow a carbon-doped compound semiconductor crystal.

摘要翻译： 提供了一种以高再现性制备具有良好电特性并从其中除去杂质的碳掺杂III-V族化合物半导体晶体的方法，其中在晶体生长期间可以容易地调节掺杂碳的量。 该方法包括以下步骤：用复合原料，固体碳和氧化硼填充坩埚; 将填充的坩埚密封在由不透气材料形成的气密容器内; 在密封状态下将复合原料加热并熔化在气密容器中; 并固化熔融的复合原料以生长掺碳化合物半导体晶体。

公开(公告)号：US06780244B2

公开(公告)日：2004-08-24

申请号：US10376097

申请日：2003-02-26

申请人： Tomohiro Kawase ,  Katsushi Hashio ,  Shin-ichi Sawada ,  Masami Tatsumi

发明人： Tomohiro Kawase ,  Katsushi Hashio ,  Shin-ichi Sawada ,  Masami Tatsumi

IPC分类号： C30B2942

CPC分类号： C30B15/00 ,  C30B11/00 ,  C30B29/42 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1096

摘要： A large semiconductor crystal is produced by charging a raw material into a crucible in a reactor tube, sealing the reactor tube with a flange on an open end of the tube, pressurizing the interior of the tube to an elevated pressure with an inert gas, heating the tube with an externally arranged heater to melt the raw material to form a raw material melt in the crucible, and solidifying the raw material melt to grow the semiconductor crystal. A second raw material such as a group V element can be introduced as a vapor from a reservoir into the melt in the crucible to form a compound semiconductor material. The flange is sealed to the tube by an elastic seal member, of which the temperature is maintained below 400° C. throughout the process, to protect its elastic sealing properties.

摘要翻译： 通过将原料装入反应器管中的坩埚中来制造大的半导体晶体，将反应器管与管的开口端上的凸缘密封，用惰性气体加压管的内部至升高的压力，加热 所述管具有外部布置的加热器，用于熔化原料以在坩埚中形成原料熔体，并固化原料熔体以使半导体晶体生长。 可以将诸如V族元素的第二原料作为蒸气从储存器引入坩埚中的熔体中以形成化合物半导体材料。 法兰通过弹性密封件密封到管上，在整个过程中温度保持在400℃以下，以保护其弹性密封性能。

公开(公告)号：US5290395A

公开(公告)日：1994-03-01

申请号：US838776

申请日：1992-03-17

申请人： Kazuhisa Matsumoto ,  Masami Tatsumi ,  Tomohiro Kawase

发明人： Kazuhisa Matsumoto ,  Masami Tatsumi ,  Tomohiro Kawase

IPC分类号： C30B15/02 ,  C30B15/10 ,  C30B15/12

CPC分类号： C30B15/12 ,  C30B15/02 ,  C30B15/10 ,  Y10S117/907 ,  Y10T117/1052 ,  Y10T117/106 ,  Y10T117/1064

摘要： A method and an apparatus for pulling a compound single crystal from a raw material molten solution is constructed to cause the solution to flow into a second crucible provided in a first crucible containing the raw material molten solution which is continuously synthesized from a plurality of raw materials, through a communicating hole formed in the bottom portion of the second crucible. The single crystal is pulled while the raw material molten solution is continuously synthesized from the plurality of raw materials, whereby it is possible to pull a long single compound crystal through a single pulling step from the raw material molten solution which is contained in the second crucible. An excellent state of a solid-liquid interface is maintained to obtain a quality single crystal.

摘要翻译： PCT No.PCT / JP91 / 00987。 371日期：1992年3月17日 102（e）1992年3月17日PCT PCT 1991年7月24日PCT公布。 出版物WO92 / 01826 日本1992年2月6日。一种用于从原料熔融溶液中拉出复合单晶的方法和装置被构造成使溶液流入设置在包含原料熔融溶液的第一坩埚中的第二坩埚中 通过形成在第二坩埚的底部的连通孔从多个原料合成。 在从多个原料连续地合成原料熔融溶液的同时拉出单晶，由此可以从包含在第二坩埚中的原料熔融溶液中通过单一拉拔步骤拉出长的单一化合物晶体 。 维持固液界面的优异状态以获得优质的单晶。