Abstract:
A network bridge comprising two ports for connection to two networks, a spanning tree controller and a wireless bridge link controller for each port. The ports employ an adaptive modulation technique. The wireless bridge link controller is connected to the port to exchange physical layer information with said port. When the port detects a change of its PHY mode, it sets the path cost of the link to a value configured for the new PHY mode and forces the bridge to recalculate its spanning tree. The wireless bridge link controller is also connected to the spanning tree controller. If the bridge detects that it has not received BPDUs for a certain time period and the timer will expire soon, the bridge forces the port, via the wireless bridge link controller, to use a more robust PHY mode.
Abstract:
A semiconductor product includes, a substrate with a first dielectric layer having contact hole fillings for contacting active areas in the substrate. A second dielectric layer with contact holes is provided therein. The contact holes have a width in a first lateral direction. The product further includes conductive lines, each conductive line passing over contact holes in the second dielectric layer and contacting a plurality of contact hole fillings in the first dielectric layer. The conductive lines have a width, in the first lateral direction, that is smaller than the width of the contact holes of the second dielectric layer. The conductive lines are in direct mechanical contact with the contact hole fillings and thereby remove the need to provide any conventional “contact to interconnect” structures.
Abstract:
The invention relates to a module for a measuring device and to a measuring device. The inventive module for a measuring device is provided with a plug-in contact element for the electrical contact of the plug-and-socket plate of the measuring device which is used for data transfer. Said module for the measuring device comprises a main circuit card arranged in the first circuit card space. Said first circuit card space is formed by at least one first element of the body which encompasses the circuit card in a closed manner on the level of the external periphery thereof.
Abstract:
In the method proposed, microparticles suspended in a liquid or droplets suspended in a liquid with which they are immiscible are shaped by high-frequency electric fields in a three-dimensional electrode array of a size in the micrometer or submicrometer range and subsequently consolidated by prior art chemical bonding procedures or by physical methods. The disposition, geometry and control of the electrodes determine the shape of the particles. The particles themselves must have a conductivity and/or relative dielectric constant lower than the solution surrounding them. For some, this can be achieved only at certain frequencies in the kHz and MHz band which are determined by the passive electrical properties of the particles and the surrounding solution. The particles or droplets are repelled by the electrodes so that they are shaped in the free solution without making contact with any surface and can then be consolidated. This makes it possible to shape micrometer and submicrometer size particles of the kind required in chromatography, affinity biochemistry and medicine, as well as for filter systems.
Abstract:
A method for fabricating stacked non-volatile memory cells and non-volatile memory cell arrays are disclosed. A semiconductor wafer is provided having a charge-trapping layer and a conductive layer deposited on the surface of the semiconductor wafer. Using a mask layer on top of the conductive layer, contact holes are formed into which a contact fill material is deposited. A further conductive layer is deposited on the surface of the semiconductor wafer and is patterned so as to form word lines. The contact fill material is connected to a contact plug using the contact holes with the contact fill material as a landing pad.
Abstract:
A method for fabricating stacked non-volatile memory cells and non-volatile memory cell arrays are disclosed. A semiconductor wafer is provided having a charge-trapping layer and a conductive layer deposited on the surface of the semiconductor wafer. Using a mask layer on top of the conductive layer, contact holes are formed into which a contact fill material is deposited. A further conductive layer is deposited on the surface of the semiconductor wafer and is patterned so as to form word lines. The contact fill material is connected to a contact plug using the contact holes with the contact fill material as a landing pad.
Abstract:
The invention relates to a module for a measuring device and to a measuring device. The inventive module for a measuring device is provided with a plug-in contact element for the electrical contact of the plug-and-socket plate of the measuring device which is used for data transfer. Said module for the measuring device comprises a main circuit card arranged in the first circuit card space. Said first circuit card space is formed by at least one first element of the body which encompasses the circuit card in a closed manner on the level of the external periphery thereof.
Abstract:
The bit lines are produced by an implantation of a dopant by means of a sacrificial hard mask layer, which is later replaced with the gate electrodes formed of polysilicon in the memory cell array. Striplike areas of the memory cell array, which run transversely to the bit lines, are reserved by a blocking layer to be occupied by the bit line contacts. In these areas, the hard mask is used to form contact holes, which are self-aligned with the implanted buried bit lines. Between the blocked areas, the word lines are arranged normally to the bit lines.
Abstract:
A semiconductor substrate is provided with a recess. A memory layer or memory layer sequence is applied to sidewalls and the bottom of the recess. The memory layer is formed into two separate portions at opposite sidewalls of the recess either by reducing the memory layer to sidewall spacers or by forming sidewall spacers and removing portions of the memory layer that are not covered by the spacers. A gate electrode is applied into the recess, and source/drain regions are formed by an implantation of doping atoms adjacent to the sidewalls of the recess and the remaining portions of the memory layer. The memory layer can especially be a dielectric material suitable for charge-trapping.
Abstract:
The disclosure relates to an electrical machine for a drive system of an electrically driven aircraft and its winding system. In particular, the disclosure relates to an interconnection unit for interconnecting the windings of the winding system. For electrically connecting winding arrangements of the winding system, the interconnection unit has a connection arrangement with large number of contact points which are configured and arranged on the interconnection unit such that these contact points of the interconnection unit may be connected to contact points of the winding arrangements to be contact-connected. The connection arrangement furthermore has a large number of electrical connection sections, wherein a respective connection section connects two of the contact points to one another. This interconnection unit may be contact-connected by way of its contact points to corresponding contact points of the winding arrangements, so that a desired winding system may be constructed in a simple manner.