公开(公告)号：US20090285254A1

公开(公告)日：2009-11-19

申请号：US12392452

申请日：2009-02-25

申请人： Toru TAKAYAMA ,  Hiroki Nagai ,  Hitoshi Sato ,  Tomoya Satoh ,  Isao Kidoguchi

发明人： Toru TAKAYAMA ,  Hiroki Nagai ,  Hitoshi Sato ,  Tomoya Satoh ,  Isao Kidoguchi

IPC分类号： H01S5/026

CPC分类号： H01S5/32325 ,  H01S5/0224 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/2218 ,  H01S5/3202 ,  H01S5/32316 ,  H01S5/4087

摘要： A semiconductor laser device has a red laser element and an infrared laser element on a substrate. The red laser element has a double hetero structure in which an InGaP-based or AlGaInP-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. The infrared laser element has a double hetero structure in which a GaAs-based or AlGaAs-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. Provided that a first electrode formed over the second conductivity type cladding layer has a width W1 in a direction perpendicular to a cavity length direction and a second electrode formed over the second conductivity type cladding layer has a width W2 in a direction perpendicular to a cavity length direction, the relations of W1>W2 and 80 μm≧W2≧60 μm are satisfied.

摘要翻译： 半导体激光装置在基板上具有红色激光元件和红外激光元件。 红色激光元件具有双异质结构，其中InGaP基或AlGaInP基有源层插入在具有脊的第一导电型包层和第二导电型包覆层之间。 红外激光元件具有双异质结构，其中在第一导电型包覆层和具有脊的第二导电型包覆层之间插入GaAs基或AlGaAs基有源层。 假设形成在第二导电类型包层上的第一电极在垂直于空腔长度方向的方向上具有宽度W1，并且形成在第二导电类型包层上的第二电极在垂直于腔长度的方向上具有宽度W2 方向，满足W1> W2和80mum> = W2> =60μm的关系。

公开(公告)号：US07843984B2

公开(公告)日：2010-11-30

申请号：US12392452

申请日：2009-02-25

申请人： Toru Takayama ,  Hiroki Nagai ,  Hitoshi Sato ,  Tomoya Satoh ,  Isao Kidoguchi

发明人： Toru Takayama ,  Hiroki Nagai ,  Hitoshi Sato ,  Tomoya Satoh ,  Isao Kidoguchi

IPC分类号： H01S3/04 ,  H01S5/00

CPC分类号： H01S5/32325 ,  H01S5/0224 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/2218 ,  H01S5/3202 ,  H01S5/32316 ,  H01S5/4087

摘要： A semiconductor laser device has a red laser element and an infrared laser element on a substrate. The red laser element has a double hetero structure in which an InGaP-based or AlGaInP-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. The infrared laser element has a double hetero structure in which a GaAs-based or AlGaAs-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. Provided that a first electrode formed over the second conductivity type cladding layer has a width W1 in a direction perpendicular to a cavity length direction and a second electrode formed over the second conductivity type cladding layer has a width W2 in a direction perpendicular to a cavity length direction, the relations of W1>W2 and 80 μm≧W2≧60 μm are satisfied.

摘要翻译： 半导体激光装置在基板上具有红色激光元件和红外激光元件。 红色激光元件具有双异质结构，其中InGaP基或AlGaInP基有源层插入在具有脊的第一导电型包层和第二导电型包覆层之间。 红外激光元件具有双异质结构，其中在第一导电型包覆层和具有脊的第二导电型包覆层之间插入GaAs基或AlGaAs基有源层。 假设形成在第二导电类型包层上的第一电极在垂直于空腔长度方向的方向上具有宽度W1，并且形成在第二导电类型包层上的第二电极在垂直于腔长度的方向上具有宽度W2 方向，满足W1> W2和80μm≥W2≥60μm的关系。

公开(公告)号：US07839911B2

公开(公告)日：2010-11-23

申请号：US12298258

申请日：2007-06-19

申请人： Tomoya Satoh ,  Toru Takayama ,  Koichi Hayakawa ,  Isao Kidoguchi

发明人： Tomoya Satoh ,  Toru Takayama ,  Koichi Hayakawa ,  Isao Kidoguchi

IPC分类号： H01S5/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0287 ,  H01S5/1014 ,  H01S5/1039 ,  H01S5/221 ,  H01S5/34326 ,  H01S5/3436 ,  H01S2301/18

摘要： A semiconductor laser device 100 having a ridge stripe structure comprises: an n-type clad layer 105 having a protrusion; and an n-type current block layer 107 covering the clad layer, except the upper surface of the protrusion. When the width of the upper surface is W, the distance between front and rear cleavage planes is L, the width of the upper surface at the front cleavage plane is Wf, and the width of the upper surface at the rear cleavage is Wr. In a range where a distance from the front cleavage plane is shorter than or equal to L/2, an area Sc of the upper surface is in a range of L/8×(3Wf+Wr)

摘要翻译： 具有脊条状结构的半导体激光装置100包括：具有突起的n型覆盖层105; 以及覆盖包层的n型电流阻挡层107，除了突起的上表面以外。 当上表面的宽度为W时，前后解理面之间的距离为L，前解理面上表面的宽度为Wf，后裂纹的上表面的宽度为Wr。 在与前解体面的距离小于或等于L / 2的范围内，上表面的面积Sc在L / 8×（3Wf + Wr）

公开(公告)号：US07860139B2

公开(公告)日：2010-12-28

申请号：US12405656

申请日：2009-03-17

申请人： Toru Takayama ,  Koichi Hayakawa ,  Tomoya Satoh ,  Masatoshi Sasaki ,  Isao Kidoguchi

发明人： Toru Takayama ,  Koichi Hayakawa ,  Tomoya Satoh ,  Masatoshi Sasaki ,  Isao Kidoguchi

IPC分类号： H01S5/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/1064 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/4031 ,  H01S5/4087 ,  H01S2301/14

摘要： A semiconductor laser device includes an n-type clad layer, an active layer, and a p-type clad layer having a ridge and wing regions. The wing regions are provided with a first trench present on one side of the ridge and a second trench provided on the other side thereof being interposed therebetween. A reflectivity Rf at a front end face of a resonator, a reflectivity Rr at a rear end face of the resonator, a minimum value W1 of a width of the first trench in a region adjacent to the front end face, a minimum value W2 of a width of the second trench in the region adjacent to the front end face, a width W3 of the first trench at the rear end face, and a width W4 of the second trench at the rear end face satisfy Rf Wr. The ridge includes a region where a width decreases with distance from the front end side toward the rear end side.

摘要翻译： 半导体激光器件包括n型覆层，有源层和具有脊和翼区的p型覆盖层。 翼部区域设置有在脊的一侧上存在的第一沟槽和在其另一侧上设置的第二沟槽。 谐振器的前端面的反射率Rf，谐振器的后端面的反射率Rr，与前端面相邻的区域中的第一沟槽的宽度的最小值W1，最小值W2 在与前端面相邻的区域中的第二沟槽的宽度，后端面处的第一沟槽的宽度W3和后端面处的第二沟槽的宽度W4满足Rf Wr。 脊部包括宽度随着从前端侧向后端侧的距离而减小的区域。

公开(公告)号：US07613220B2

公开(公告)日：2009-11-03

申请号：US11866724

申请日：2007-10-03

申请人： Toru Takayama ,  Tomoya Satoh ,  Isao Kidoguchi

发明人： Toru Takayama ,  Tomoya Satoh ,  Isao Kidoguchi

IPC分类号： H01S5/00

CPC分类号： H01S5/4031 ,  H01S5/162 ,  H01S5/2059 ,  H01S5/4087 ,  H01S2301/173

摘要： A first and second semiconductor laser, which comprise buffer layers, cladding layers, quantum well active layers, and cladding layers integrated on the substrate and have a stripe geometry, are integrated on a common substrate, with the quantum well active layers in the vicinity of the cavity facets disordered by impurity diffusion. Relationships λ1>λb1, λ2>λb2, λ1>λ2, and E1≦E2 are satisfied, where λ1 and λ2 are defined, respectively, as the emission wavelengths of the active layers of the first and second semiconductor lasers, E1 and E2, respectively, as the forbidden band energies of the buffer layers of the first and second semiconductor lasers, and λb1 and λb2 respectively as the wavelengths corresponding to the forbidden band energies of the buffer layers of the first and second semiconductor lasers. The generation of reactive currents flowing through the window portions, which is caused by the intensification of disordering performed for window region formation, can be appropriately suppressed for both types of integrated semiconductor lasers.

摘要翻译： 第一和第二半导体激光器包括缓冲层，包层，量子阱有源层和集成在衬底上并具有条纹几何形状的覆层，其被集成在公共衬底上，量子阱活性层在 腔面由杂质扩散无序。 关系λ1> lambdab1，λ2> lambdab2，λ1>λ2和E1 <= E2，其中λ1和λ2分别被定义为第一和第二半导体激光器E1和E2的有源层的发射波长， 分别作为第一和第二半导体激光器的缓冲层的禁带能量，和lambdab1和lambdab2作为与第一和第二半导体激光器的缓冲层的禁带能量相对应的波长。 对于两种类型的集成半导体激光器，可以适当地抑制由窗口区域形成引起的无序强化引起的流过窗口部分的无功电流的产生。

公开(公告)号：US20080175295A1

公开(公告)日：2008-07-24

申请号：US11889920

申请日：2007-08-17

申请人： Toru Takayama ,  Tomoya Satoh ,  Koichi Hayakawa ,  Isao Kidoguchi

发明人： Toru Takayama ,  Tomoya Satoh ,  Koichi Hayakawa ,  Isao Kidoguchi

IPC分类号： H01S5/22

CPC分类号： H01S5/4031 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/1039 ,  H01S5/1064 ,  H01S5/162 ,  H01S5/22 ,  H01S5/4087

摘要： The semiconductor laser device includes first and second light emitting portions each including a first cladding layer, an active layer and a second cladding layer, and each having a stripe structure. The stripe structure of the first light emitting portion has a section having a width changing along a resonator direction and includes a first front end face, and relationships of Wf1≧W1; W1>W2; and (Wf1−W1)/2L1 W4; and (Wf2−W3)/2L3

摘要翻译： 半导体激光器件包括第一和第二发光部分，每个发光部分包括第一包层，有源层和第二包层，并且每个具有条纹结构。 第一发光部分的条纹结构具有沿着谐振器方向具有宽度变化的部分，并且包括第一前端面，以及W＆lt; f1＆gt; = W＆lt; 1＆lt; / SUB >; W 1＆lt; / SUB＆gt; 2＆lt; 2＆gt; （W 1 -W 1 -W 2）/ 2 L 1（W 1 -W 2）＆lt; 1＆lt; 1＆ / SUB>）/ 2L 2保持其中W f1是第一前端面上的宽度; W 1是从第一前端面离开距离L 1 1的位置的宽度; 并且W 2是在远离所述前端面的位置处的距离L 1 + L 2的宽度（而L _{1 + L 2 <= L）。 第二第一发光部分的条纹结构具有沿着谐振器方向具有宽度变化的部分，并且包括第二前端面，以及W 2 2 / / SUB >> = W 3 3的关系， SUB>; W 3 3 W 4 （W 3 -W 3 -W 3）/ 2 L 3（W 3 -W 4） / SUB>）/ 2L 4保持其中W f2是第二前端面上的宽度; W 1是从第二前端面离开距离L 3的位置的宽度（而L <1> SUB > 3 ）; 而W 4是从第二前端面离开距离L 3 + L 4的位置的宽度。}

公开(公告)号：US20090296765A1

公开(公告)日：2009-12-03

申请号：US12405656

申请日：2009-03-17

申请人： Toru TAKAYAMA ,  Koichi Hayakawa ,  Tomoya Satoh ,  Masatoshi Sasaki ,  Isao Kidoguchi

发明人： Toru TAKAYAMA ,  Koichi Hayakawa ,  Tomoya Satoh ,  Masatoshi Sasaki ,  Isao Kidoguchi

IPC分类号： H01S5/22 ,  H01S5/026

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/1064 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/4031 ,  H01S5/4087 ,  H01S2301/14

摘要： A semiconductor laser device includes an n-type clad layer, an active layer, and a p-type clad layer having a ridge and wing regions. The wing regions are provided with a first trench present on one side of the ridge and a second trench provided on the other side thereof being interposed therebetween. A reflectivity Rf at a front end face of a resonator, a reflectivity Rr at a rear end face of the resonator, a minimum value W1 of a width of the first trench in a region adjacent to the front end face, a minimum value W2 of a width of the second trench in the region adjacent to the front end face, a width W3 of the first trench at the rear end face, and a width W4 of the second trench at the rear end face satisfy Rf Wr. The ridge includes a region where a width decreases with distance from the front end side toward the rear end side.

摘要翻译： 半导体激光器件包括n型覆层，有源层和具有脊和翼区的p型覆盖层。 翼部区域设置有在脊的一侧上存在的第一沟槽和在其另一侧上设置的第二沟槽。 谐振器的前端面的反射率Rf，谐振器的后端面的反射率Rr，与前端面相邻的区域中的第一沟槽的宽度的最小值W1，最小值W2 在与前端面相邻的区域中的第二沟槽的宽度，后端面处的第一沟槽的宽度W3和后端面处的第二沟槽的宽度W4满足Rf Wr。 脊部包括宽度随着从前端侧向后端侧的距离而减小的区域。

公开(公告)号：US20090232178A1

公开(公告)日：2009-09-17

申请号：US12392469

申请日：2009-02-25

申请人： Koichi HAYAKAWA ,  Toru Takayama ,  Masahiro Kume ,  Tomoya Satoh ,  Isao Kidoguchi

发明人： Koichi HAYAKAWA ,  Toru Takayama ,  Masahiro Kume ,  Tomoya Satoh ,  Isao Kidoguchi

IPC分类号： H01S5/327

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/1064 ,  H01S5/2231 ,  H01S5/3403 ,  H01S5/3432 ,  H01S5/34326 ,  H01S5/4087 ,  H01S2301/18

摘要： A semiconductor laser device has a first light emitting portion and a second light emitting portion having a longer emission wavelength than that of the first light emitting portion. Each of the first light emitting portion and the second light emitting portion has a stripe-shaped ridge structure used for carrier injection. The ridge structure in the first light emitting portion includes a first front end region having a width Wf1 and having a length L3 from a front facet, a first rear end region having a width Wr1 and having a length L1 from a rear facet, and a first tapered region located between the first front end region and the first rear end region and having a length L2, and the relation of Wf1>Wr1 is satisfied. The ridge structure in the second light emitting portion includes a second front end region having a width Wf2 and having a length L6 from a front facet, a second rear end region having a width Wr2 and having a length L4 from a rear facet, and a second tapered region located between the second front end region and the second rear end region and having a length L5, and the relation of Wf2>Wr2 is satisfied. The relations of L1+L2+L3=L4+L5+L6, Wf1 L4 are also satisfied.

摘要翻译： 半导体激光装置具有比第一发光部的发光波长长的第一发光部和第二发光部。 第一发光部分和第二发光部分中的每一个具有用于载体注入的条形脊结构。 第一发光部的脊结构具有第一前端区域，具有宽度Wf1并且具有来自前端面的长度L3，具有宽度Wr1的第一后端区域和具有来自后面的长度L1的第一前端区域，以及 位于第一前端区域和第一后端区域之间并且具有长度L2的第一锥形区域，并且满足Wf1> Wr1的关系。 第二发光部的脊部结构包括具有宽度Wf2的第二前端区域，具有来自前端面的长度L6，具有宽度Wr2的第二后端区域，并且具有来自后面的长度L4， 位于第二前端区域和第二后端区域之间并且具有长度L5的第二锥形区域，并且满足Wf2> Wr2的关系。 还满足L1 + L2 + L3 = L4 + L5 + L6，Wf1 L4的关系。

公开(公告)号：US20090201962A1

公开(公告)日：2009-08-13

申请号：US12298258

申请日：2007-06-19

申请人： Tomoya Satoh ,  Toru Takayama ,  Koichi Hayakawa ,  Isao Kidoguchi

发明人： Tomoya Satoh ,  Toru Takayama ,  Koichi Hayakawa ,  Isao Kidoguchi

IPC分类号： H01S5/22

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0287 ,  H01S5/1014 ,  H01S5/1039 ,  H01S5/221 ,  H01S5/34326 ,  H01S5/3436 ,  H01S2301/18

摘要： A semiconductor laser device 100 having a ridge stripe structure comprises: an n-type clad layer 105 having a protrusion; and an n-type current block layer 107 covering the clad layer, except the upper surface of the protrusion. When the width of the upper surface is W, the distance between front and rear cleavage planes is L, the width of the upper surface at the front cleavage plane is Wf, and the width of the upper surface at the rear cleavage is Wr. In a range where a distance from the front cleavage plane is shorter than or equal to L/2, an area Sc of the upper surface is in a range of L/8×(3Wf+Wr)

摘要翻译： 具有脊条状结构的半导体激光装置100包括：具有突起的n型覆盖层105; 以及覆盖包层的n型电流阻挡层107，除了突起的上表面以外。 当上表面的宽度为W时，前后解理面之间的距离为L，前解理面上表面的宽度为Wf，后裂纹的上表面的宽度为Wr。 在与前解体面的距离小于或等于L / 2的范围内，上表面的面积Sc在L / 8×（3Wf + Wr）

公开(公告)号：US07542500B2

公开(公告)日：2009-06-02

申请号：US11889920

申请日：2007-08-17

申请人： Toru Takayama ,  Tomoya Satoh ,  Koichi Hayakawa ,  Isao Kidoguchi

发明人： Toru Takayama ,  Tomoya Satoh ,  Koichi Hayakawa ,  Isao Kidoguchi

IPC分类号： H01S5/00

CPC分类号： H01S5/4031 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/1039 ,  H01S5/1064 ,  H01S5/162 ,  H01S5/22 ,  H01S5/4087

摘要： The semiconductor laser device includes first and second light emitting portions each including a first cladding layer, an active layer and a second cladding layer, and each having a stripe structure. The stripe structure of the first light emitting portion has a section having a width changing along a resonator direction and includes a first front end face, and relationships of Wf1≧W1; W1>W2; and (Wf1−W1)/2L1 W4; and (Wf2−W3)/2L3

摘要翻译： 半导体激光器件包括第一和第二发光部分，每个发光部分包括第一包层，有源层和第二包层，并且每个具有条纹结构。 第一发光部分的条纹结构具有沿着谐振器方向具有宽度变化的部分，并且包括第一前端面以及Wf1> = W1的关系; W1> W2; 和（Wf1-W1）/ 2L1 <（W1-W2）/ 2L2，其中Wf1是第一前端面上的宽度; W1是离开第一前端面距离L1的位置的宽度; W2是从前端面离开距离L1 + L2（L1 + L2 <= L）的位置的宽度。 第二第一发光部分的条纹结构具有沿着谐振器方向具有宽度变化的部分，并且包括第二前端面，Wf2> = W3的关系; W3> W4; 和（Wf2-W3）/ 2L3 <（W3-W4）/ 2L4，其中Wf2是第二前端面上的宽度; W1是离开第二前端面距离L3（而L1