公开(公告)号：US06610142B1

公开(公告)日：2003-08-26

申请号：US08977944

申请日：1997-11-24

申请人： Toru Takayama ,  Hongyong Zhang ,  Shunpei Yamazaki ,  Yasuhiko Takemura

发明人： Toru Takayama ,  Hongyong Zhang ,  Shunpei Yamazaki ,  Yasuhiko Takemura

IPC分类号： C30B1322

CPC分类号： H01L27/12 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02675 ,  H01L27/1277 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78654 ,  H01L29/78675

摘要： A process for fabricating a semiconductor at a lower crystallization temperature and yet at a shorter period of time, which comprises forming an insulator coating on a substrate; exposing said insulator coating to a plasma; forming an amorphous silicon film on said insulator coating after its exposure to said plasma; and heat treating said silicon film in the temperature range of from 400 to 650° C. or at a temperature not higher than the glass transition temperature of the substrate. The nucleation sites are controlled by selectively exposing the amorphous silicon film to a plasma or by selectively applying a substance containing elements having a catalytic effect thereto. A process for fabricating a thin film transistor using the same is also disclosed.

摘要翻译： 一种制造半导体的方法，该半导体在较低的结晶温度下并且在较短的时间内，其包括在基片上形成绝缘体涂层; 将所述绝缘体涂层暴露于等离子体; 在暴露于所述等离子体之后，在所述绝缘体涂层上形成非晶硅膜; 在400〜650℃的温度范围内或在不高于基板的玻璃化转变温度的温度下对所述硅膜进行热处理。 通过选择性地将非晶硅膜暴露于等离子体或通过选择性地施加含有其催化作用的元素的物质来控制成核位点。 还公开了使用其制造薄膜晶体管的工艺。

公开(公告)号：US6110770A

公开(公告)日：2000-08-29

申请号：US229306

申请日：1999-01-13

申请人： Hongyong Zhang ,  Hideki Uochi ,  Toru Takayama ,  Shunpei Yamazaki ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Hideki Uochi ,  Toru Takayama ,  Shunpei Yamazaki ,  Yasuhiko Takemura

IPC分类号： H01L21/20 ,  H01L21/00 ,  H01L21/324 ,  H01L21/336 ,  H01L27/12 ,  H01L29/02 ,  H01L29/78 ,  H01L29/786 ,  H01L21/84

CPC分类号： H01L21/2022 ,  H01L27/1281 ,  H01L29/66757

摘要： A process for fabricating a semiconductor by crystallizing a silicon film in a substantially amorphous state by annealing it at a temperature not higher than the crystallization temperature of amorphous silicon, and it comprises forming selectively, on the surface or under an amorphous silicon film, a coating, particles, clusters, and the like containing nickel, iron, cobalt, platinum or palladium either as a pure metal or a compound thereof such as a silicide, a salt, and the like, shaped into island-like portions, linear portions, stripes, or dots; and then annealing the resulting structure at a temperature lower than the crystallization temperature of an amorphous silicon by 20 to 150.degree. C.

摘要翻译： 一种通过在不高于非晶硅的结晶温度的温度下进行退火将基本无定形态的硅膜结晶化的半导体制造方法，其包括在表面上或非晶硅膜下选择性地形成涂层 ，含有镍，铁，钴，铂或钯的颗粒，簇等作为纯金属或其化合物，例如硅化物，盐等，成形为岛状部分，线状部分，条纹 ，或点; 然后在低于非晶硅的结晶温度的温度下将所得结构退火20〜150℃。

公开(公告)号：US5956579A

公开(公告)日：1999-09-21

申请号：US893361

申请日：1997-07-15

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Toru Takayama ,  Hideki Uochi

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Toru Takayama ,  Hideki Uochi

IPC分类号： H01L29/78 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L29/78696 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78618

摘要： Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. Islands, stripes, lines, or dots of nickel, iron, cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles, or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.

公开(公告)号：US5843225A

公开(公告)日：1998-12-01

申请号：US479720

申请日：1995-06-07

申请人： Toru Takayama ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Shunpei Yamazaki

发明人： Toru Takayama ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Shunpei Yamazaki

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L27/12 ,  H01L29/786 ,  C30B1/10

CPC分类号： H01L21/2022 ,  H01L21/2026 ,  H01L27/12 ,  H01L29/66757 ,  H01L29/78654 ,  H01L29/78675

摘要： A process for fabricating a semiconductor at a lower crystallization temperature and yet at a shorter period of time, which comprises forming an insulator coating on a substrate; exposing said insulator coating to a plasma; forming an amorphous silicon film on said insulator coating after its exposure to said plasma; and heat treating said silicon film in the temperature range of from 400.degree. to 650.degree. C. or at a temperature not higher than the glass transition temperature of the substrate. The nucleation sites are controlled by selectively exposing the amorphous silicon film to a plasma or by selectively applying a substance containing elements having a catalytic effect thereto. A process for fabricating a thin film transistor using the same is also disclosed.

摘要翻译： 一种制造半导体的方法，该半导体在较低的结晶温度下并且在较短的时间内，其包括在基片上形成绝缘体涂层; 将所述绝缘体涂层暴露于等离子体; 在暴露于所述等离子体之后，在所述绝缘体涂层上形成非晶硅膜; 在400〜650℃的温度或不高于基板的玻璃化转变温度的温度下对所述硅膜进行热处理。 通过选择性地将非晶硅膜暴露于等离子体或通过选择性地施加含有其催化作用的元素的物质来控制成核位点。 还公开了使用其制造薄膜晶体管的工艺。

公开(公告)号：US06997985B1

公开(公告)日：2006-02-14

申请号：US08768535

申请日：1996-12-18

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Toru Takayama ,  Hideki Uochi

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Toru Takayama ,  Hideki Uochi

IPC分类号： C30B1/06

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78696

摘要： Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. Islands, stripes, lines, or dots of nickel, iron, cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles, or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.

摘要翻译： 通过在低于非晶硅的正常结晶温度或低于基板的玻璃化转变点的温度下退火基本上非晶硅膜以使硅膜结晶的方法来制造诸如薄膜晶体管的半导体器件。 镍，铁，钴或铂的岛，条纹，线或点，镍，铁，钴或铂的硅化物，乙酸盐或硝酸盐，含有各种盐，包含至少一种镍， 铁，钴和铂用作结晶的起始原料。 这些材料形成在非晶硅膜上或下方。

公开(公告)号：US5608232A

公开(公告)日：1997-03-04

申请号：US462770

申请日：1995-06-05

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Toru Takayama ,  Hideki Uochi

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Toru Takayama ,  Hideki Uochi

IPC分类号： H01L29/78 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L29/76 ,  H01L31/036 ,  H01L31/112 ,  H01L29/04

CPC分类号： H01L29/78696 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78618

摘要： Method or fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. Islands, stripes, lines, or dots of nickel, iron, cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles, or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.

摘要翻译： 通过在低于非晶硅的正常结晶温度或低于衬底的玻璃化转变温度的温度下对基本上非晶硅膜进行退火以便使硅膜结晶来制造或制造半导体器件如薄膜晶体管。 镍，铁，钴或铂的岛，条纹，线或点，镍，铁，钴或铂的硅化物，乙酸盐或硝酸盐，含有各种盐，包含至少一种镍， 铁，钴和铂用作结晶的起始原料。 这些材料形成在非晶硅膜上或下方。

公开(公告)号：US06451638B1

公开(公告)日：2002-09-17

申请号：US09640078

申请日：2000-08-17

申请人： Hongyong Zhang ,  Hideki Uochi ,  Toru Takayama ,  Shunpei Yamazaki ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Hideki Uochi ,  Toru Takayama ,  Shunpei Yamazaki ,  Yasuhiko Takemura

IPC分类号： H01L2184

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022 ,  H01L27/1281 ,  H01L29/66757

摘要： A process for fabricating a semiconductor by crystallizing a silicon film in a substantially amorphous state by annealing it at a temperature not higher than the crystallization temperature of amorphous silicon, and it comprises forming selectively, on the surface or under an amorphous silicon film, a coating, particles, clusters, and the like containing nickel, iron, cobalt, platinum or palladium either as a pure metal or a compound thereof such as a silicide, a salt, and the like, shaped into island-like portions, linear portions, stripes, or dots; and then annealing the resulting structure at a temperature lower than the crystallization temperature of an amorphous silicon by 20 to 150° C.

摘要翻译： 一种通过在不高于非晶硅的结晶温度的温度下进行退火将基本无定形态的硅膜结晶化的半导体制造方法，其包括在表面上或非晶硅膜下选择性地形成涂层 ，含有镍，铁，钴，铂或钯的颗粒，簇等作为纯金属或其化合物，例如硅化物，盐等，成形为岛状部分，线状部分，条纹 ，或点; 然后在低于非晶硅的结晶温度的温度下将所得结构退火20〜150℃。

公开(公告)号：US6084247A

公开(公告)日：2000-07-04

申请号：US769114

申请日：1996-12-18

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Toru Takayama ,  Hideki Uochi

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Toru Takayama ,  Hideki Uochi

IPC分类号： H01L29/78 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L29/76 ,  H01L31/036

CPC分类号： H01L29/78696 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78618

摘要： Semiconductor devices such as thin-film transistors formed by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. Islands, stripes, lines, or dots of nickel, iron, cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles, or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.

摘要翻译： 半导体器件如薄膜晶体管，其通过在低于非晶硅的正常结晶温度或低于衬底的玻璃化转变温度的温度下退火基本非晶硅膜而形成，以使硅膜结晶。 镍，铁，钴或铂的岛，条纹，线或点，镍，铁，钴或铂的硅化物，乙酸盐或硝酸盐，含有各种盐，包含至少一种镍， 铁，钴和铂用作结晶的起始原料。 这些材料形成在非晶硅膜上或下方。

公开(公告)号：US5897347A

公开(公告)日：1999-04-27

申请号：US718895

申请日：1996-09-24

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Toru Takayama ,  Hideki Uochi

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang ,  Toru Takayama ,  Hideki Uochi

IPC分类号： H01L29/78 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L21/00 ,  H01L21/322

CPC分类号： H01L29/78696 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78618

摘要： Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. Islands, stripes, lines, or dots of nickel, iron cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles, or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.

摘要翻译： 通过在低于非晶硅的正常结晶温度或低于基板的玻璃化转变点的温度下退火基本非晶硅膜以使硅膜结晶的方法来制造诸如薄膜晶体管的半导体器件。 镍，铁，钴，铂，镍，铁，钴或铂的镍，铁钴或铂，硅化物，乙酸盐或硝酸盐的岛，条纹，线或点，含有各种盐，含有镍，铁， ，钴和铂用作结晶的起始材料。 这些材料形成在非晶硅膜上或下方。

公开(公告)号：US5879977A

公开(公告)日：1999-03-09

申请号：US636819

申请日：1996-04-23

申请人： Hongyong Zhang ,  Hideki Uochi ,  Toru Takayama ,  Shunpei Yamazaki ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Hideki Uochi ,  Toru Takayama ,  Shunpei Yamazaki ,  Yasuhiko Takemura

IPC分类号： H01L21/20 ,  H01L21/00 ,  H01L21/324 ,  H01L21/336 ,  H01L27/12 ,  H01L29/02 ,  H01L29/78 ,  H01L29/786 ,  H01L21/10

CPC分类号： H01L21/2022 ,  H01L27/1281 ,  H01L29/66757

摘要： A process for fabricating a semiconductor by crystallizing a silicon film in a substantially amorphous state by annealing it at a temperature not higher than the crystallization temperature of amorphous silicon, and it comprises forming selectively, on the surface or under an amorphous silicon film, a coating, particles, clusters, and the like containing nickel, iron, cobalt, platinum or palladium either as a pure metal or a compound thereof such as a silicide, a salt, and the like, shaped into island-like portions, linear portions, stripes, or dots; and then annealing the resulting structure at a temperature lower than the crystallization temperature of an amorphous silicon by 20.degree. to 150.degree. C.

摘要翻译： 一种通过在不高于非晶硅的结晶温度的温度下进行退火将基本无定形态的硅膜结晶化的半导体制造方法，其包括在表面上或非晶硅膜下选择性地形成涂层 ，含有镍，铁，钴，铂或钯的颗粒，簇等作为纯金属或其化合物，例如硅化物，盐等，成形为岛状部分，线状部分，条纹 ，或点; 然后在低于非晶硅的结晶温度的温度下将所得结构退火20〜150℃。