公开(公告)号：US20190214277A1

公开(公告)日：2019-07-11

申请号：US16357151

申请日：2019-03-18

Applicant: Toshiba Memory Corporation

Inventor： Yoshihiro Uozumi ,  Shinsuke Kimura ,  Yoshihiro Ogawa ,  Hiroyasu Iimori ,  Tatsuhiko Koide ,  Hideaki Hirabayashi ,  Yuji Nagashima

IPC: H01L21/67 ,  G03F7/40 ,  G03F7/16 ,  H01L21/68 ,  H01L21/677

CPC classification number: H01L21/67075 ,  G03F7/162 ,  G03F7/405 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67098 ,  H01L21/6715 ,  H01L21/67739 ,  H01L21/68

Abstract: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

公开(公告)号：US10147619B2

公开(公告)日：2018-12-04

申请号：US15244087

申请日：2016-08-23

Applicant: Toshiba Memory Corporation

Inventor： Katsuhiro Sato ,  Kaori Deura ,  Yoshinori Kitamura ,  Takahiro Terada ,  Yoshihiro Ogawa ,  Yuji Hashimoto ,  Masaaki Hirakawa ,  Yukako Murakami ,  Hideaki Hirabayashi

IPC: H01L21/306 ,  H01L21/67 ,  H01L21/311

Abstract: A substrate treatment apparatus according to an embodiment includes a treatment part, a cyclic path, a heater, and a first injector. The treatment part is supplied with an etchant containing phosphoric acid and a silica deposition suppressor, and brings a substrate having a silicon nitride film on a surface thereof into contact with the etchant to remove the silicon nitride film from the substrate. The cyclic path circulates the etchant in the treatment part. The heater heats the etchant. The first injector is provided on the cyclic path, and injects the silica deposition suppressor into the etchant.