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    Memory device
    1.
    发明授权
    Memory device 有权

    公开(公告)号：US10529735B2

    公开(公告)日：2020-01-07

    申请号：US16127634

    申请日：2018-09-11

    申请人： TOSHIBA MEMORY CORPORATION

    发明人： Reiko Komiya ,  Tatsuo Izumi ,  Takaya Yamanaka ,  Takeshi Nagatomo ,  Karin Takagi

    IPC分类号： H01L27/11582 ,  H01L27/1157 ,  G11C8/14 ,  G11C7/18 ,  H01L27/11556 ,  H01L27/11524

    摘要： A memory device includes first electrode layers stacked in a first direction, a first semiconductor layer piercing the first electrode layers in a first direction, a first insulating film surrounding the first semiconductor layer, and a semiconductor base connected to the first semiconductor layer. The first insulating film includes a first film, a second film, and a third film provided in order in a second direction from the first semiconductor layer toward one of first electrode layers. Spacing in the first direction between the second film and the semiconductor base is wider than a film thickness of the third film in the second direction. A minimum width of an outer perimeter of the first semiconductor layer is substantially the same as a width of an outer perimeter at a portion of the first semiconductor layer piercing the most proximal first electrode layer.

    Semiconductor memory device
    2.
    发明授权
    Semiconductor memory device 有权

    公开(公告)号：US10600803B2

    公开(公告)日：2020-03-24

    申请号：US16120412

    申请日：2018-09-03

    申请人： TOSHIBA MEMORY CORPORATION

    发明人： Yusuke Nakanishi ,  Takaya Yamanaka ,  Akira Matsumura

    IPC分类号： H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11519 ,  H01L23/532 ,  G11C16/26 ,  G11C16/04 ,  G11C16/08

    摘要： A semiconductor memory device includes first and second wiring layers above a semiconductor substrate, a memory pillar extending through the first and second wiring layers, a first plug contacting the first wiring layer, a second plug contacting the second wiring layer, a first pillar adjacent to the first plug and extending through the first wiring layer, and a second pillar adjacent to the second plug and extending through the first and second wiring layers. The memory pillar includes a first semiconductor layer, a second semiconductor layer over the first semiconductor layer, and a third insulating layer, a charge storage layer, and a fourth insulating layer on a side surface of the second semiconductor layer. The distance between the center of the first plug and the center of the first pillar is greater than the distance between the center of the second plug and the center of the second pillar.

    MEMORY DEVICE
    5.
    发明申请
    MEMORY DEVICE 审中-公开

    公开(公告)号：US20190287997A1

    公开(公告)日：2019-09-19

    申请号：US16127634

    申请日：2018-09-11

    申请人： Toshiba Memory Corporation

    发明人： Reiko Komiya ,  Tatsuo Izumi ,  Takaya Yamanaka ,  Takeshi Nagatomo ,  Karin Takagi

    IPC分类号： H01L27/11582 ,  H01L27/1157 ,  G11C7/18 ,  G11C8/14

    摘要： A memory device includes first electrode layers stacked in a first direction, a first semiconductor layer piercing the first electrode layers in a first direction, a first insulating film surrounding the first semiconductor layer, and a semiconductor base connected to the first semiconductor layer. The first insulating film includes a first film, a second film, and a third film provided in order in a second direction from the first semiconductor layer toward one of first electrode layers. Spacing in the first direction between the second film and the semiconductor base is wider than a film thickness of the third film in the second direction. A minimum width of an outer perimeter of the first semiconductor layer is substantially the same as a width of an outer perimeter at a portion of the first semiconductor layer piercing the most proximal first electrode layer.

    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    6.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20190074287A1

    公开(公告)日：2019-03-07

    申请号：US15907922

    申请日：2018-02-28

    申请人： TOSHIBA MEMORY CORPORATION

    发明人： Mikiko YAGI ,  Hideto Takekida ,  Takaya Yamanaka ,  Masaharu Mizutani ,  Hideo Wada

    IPC分类号： H01L27/11575 ,  H01L27/11582 ,  H01L23/528 ,  H01L27/12

    摘要： A semiconductor memory device includes a substrate with a first insulating film thereon, a wiring in the first insulating film, a first electrode film on the first insulating film, a stacked body on the first electrode film, made of alternating second insulating films and second electrode films, a first insulating member extending in a direction to penetrate the stacked body, a first semiconductor film around the first insulating member and connected to the first electrode film, a third insulating film around the first semiconductor film, a first conductive member extending in the direction to penetrate the stacked body and the first electrode film, and connected to the wiring, and a fourth insulating film around the first conductive member. The fourth insulating film has the same film structure as the third insulating film.

    Memory device
    8.
    发明授权
    Memory device 有权

    公开(公告)号：US11024646B2

    公开(公告)日：2021-06-01

    申请号：US16695749

    申请日：2019-11-26

    申请人： TOSHIBA MEMORY CORPORATION

    发明人： Reiko Komiya ,  Tatsuo Izumi ,  Takaya Yamanaka ,  Takeshi Nagatomo ,  Karin Takagi

    IPC分类号： H01L27/1158 ,  H01L27/11582 ,  H01L27/1157 ,  G11C8/14 ,  G11C7/18 ,  H01L27/11556 ,  H01L27/11524

    摘要： A memory device includes a conductive layer, a plurality of first electrode layers, a first semiconductor layer extending through the plurality of first electrode layers in a first direction toward the plurality of first electrode layers from the conductive layer, a first insulating film including a tunneling insulator film, a charge-trapping film and a blocking insulator film, a second electrode layer, and a semiconductor base. The charge-trapping film is spaced along the first direction from the semiconductor base, a distance in the first direction between the charge-trapping film and the semiconductor base is larger than a thickness of the blocking insulator film in a second direction toward the plurality of first electrode layers from the first semiconductor layer.

    Memory device
    9.
    发明授权
    Memory device 有权

    公开(公告)号：US10211222B1

    公开(公告)日：2019-02-19

    申请号：US15909439

    申请日：2018-03-01

    申请人： TOSHIBA MEMORY CORPORATION

    发明人： Takaya Yamanaka

    IPC分类号： H01L27/11582 ,  H01L27/11568 ,  H01L23/532 ,  H01L29/45 ,  H01L27/11573 ,  H01L21/311 ,  H01L21/02 ,  H01L23/528 ,  H01L23/522 ,  H01L29/10 ,  H01L29/66 ,  H01L21/285 ,  H01L21/306

    摘要： A memory device includes a conductive layer, a first electrode over the conductive layer, and a second electrode between the conductive layer and the first electrode. The second electrode is a material different from that of the first electrode. A semiconductor pillar extends through the first and second electrodes, and has an end connected to the conductive layer. A first insulating film is between the semiconductor pillar and the first and second electrodes and between at least a portion of the semiconductor pillar and the conductive layer. A second insulating film is between the conductive layer and the first insulating film. A third insulating film is between the first insulating film and the second electrode, and between the second and third insulating film. The second electrode and conductive layer include a first element and the second and third insulating films comprise an oxide or nitride of the first element.