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    Anisomycin derivatives and anticancer agents, antifungal agents and antiprotozoan agents containing the same
    4.
    发明授权
    Anisomycin derivatives and anticancer agents, antifungal agents and antiprotozoan agents containing the same 失效
    异丝霉素衍生物和抗癌剂，抗真菌剂和含有它们的抗原生动物剂

    公开(公告)号：US5463078A

    公开(公告)日：1995-10-31

    申请号：US196508

    申请日：1994-02-15

    申请人： Yukio Iino ,  Makoto Ishii ,  Koji Ohsumi ,  Takashi Tsuji

    发明人： Yukio Iino ,  Makoto Ishii ,  Koji Ohsumi ,  Takashi Tsuji

    IPC分类号： A61K31/40 ,  C07D207/12 ,  C12N1/20 ,  C12P17/10 ,  C12R1/465

    CPC分类号： C07D207/12

    摘要： Anisomycin derivatives represented by the following formula: ##STR1## and salts thereof, wherein R is hydrogen or an acyl group of 1-18 carbon atoms, and X is either a carbamoyl group represented by the formula --CONR.sup.1 R.sup.2 or an alkyl group represented by the formula --CH.sub.2 R.sup.3 in which R.sup.1 and R.sup.2 are each hydrogen, a linear or cyclic alkyl group of 1-6 carbon atoms which may have a substituent or a phenyl group which may have a substituent, and R.sup.3 is hydrogen, an alkyl group of 1-6 carbon atoms or an alkoxy group of 1-6 carbon atoms which may have a substituent, have improved stability in blood or plasma and are useful as anticancer agents, antifungal agents and antiprotozoan agents.

    摘要翻译： 由下式表示的异青霉素衍生物：其中R是氢或1-18个碳原子的酰基，X是由式-CONR1R2表示的氨基甲酰基或由式-CONR1R2表示的烷基， 式为-CH 2 R 3，其中R 1和R 2各自为氢，可具有取代基的1-6个碳原子的直链或环状烷基或可具有取代基的苯基，R 3为氢， 6个碳原子或可具有取代基的1-6个碳原子的烷氧基具有改善的血液或血浆中的稳定性，并且可用作抗癌剂，抗真菌剂和抗原生动物剂。

    Trench MOS type silicon carbide semiconductor device
    10.
    发明授权
    Trench MOS type silicon carbide semiconductor device 有权
    沟槽MOS型碳化硅半导体器件

    公开(公告)号：US07732861B2

    公开(公告)日：2010-06-08

    申请号：US12461713

    申请日：2009-08-21

    申请人： Takashi Tsuji

    发明人： Takashi Tsuji

    IPC分类号： H01L21/336 ,  H01L29/788

    CPC分类号： H01L29/7813 ,  H01L21/047 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/66068

    摘要： A trench MOS type SiC semiconductor device includes a first conductivity semiconductor substrate, a first conductivity drift layer on the substrate, a second conductivity base layer on the drift layer, a first conductivity source layer on the base layer, a stripe shaped trench reaching from the surface of the source layer to the drift layer and having a gate electrode via a gate oxide film, a second conductivity layer on the bottom of the trench, and a second conductivity type region thereon on across-the-width side walls of at least one end of the trench, electrically coupling the second conductivity layer with the base layer. The device allows a low on-resistance without newly forming an electrode connected to the second conductivity layer even in the case of a device in which the second conductivity layer has to be grounded.

    摘要翻译： 沟槽MOS型SiC半导体器件包括第一导电半导体衬底，衬底上的第一电导率漂移层，漂移层上的第二导电性基底层，基底层上的第一导电源层， 源极层的表面到漂移层，并且通过栅极氧化膜具有栅电极，在沟槽的底部具有第二导电层，并且在其上的至少一个的宽度侧壁上的第二导电类型区域 沟槽的端部，将第二导电层与基底层电耦合。 即使在第二导电层必须接地的装置的情况下，该装置也允许低导通电阻而不新形成连接到第二导电层的电极。