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1.发明申请Copper alloy thin films, copper alloy sputtering targets and flat panel displays 审中-公开铜合金薄膜，铜合金溅射靶和平板显示器公开(公告)号：US20060091792A1
公开(公告)日：2006-05-04
申请号：US11235196
申请日：2005-09-27
CPC分类号： H01L23/53233 , C23C14/185 , G02F2001/136295 , H01J29/02 , H01J2211/225 , H01L27/124 , H01L2924/0002 , Y10T428/31678 , H01L2924/00
摘要： A Cu alloy thin film contains Fe and P with the balance being substantially Cu, in which the contents of Fe and P satisfy all the following conditions (1) to (3), and in which Fe2P is precipitated at grain boundaries of Cu after heat treatment at 200° C. to 500° C. for 1 to 120 minutes: 1.4NFe+8NP 1.0 (2) 12NFe+NP>0.5 (3) wherein NFe represents the content of Fe (atomic percent); and NP represents the content of P (atomic percent).
摘要翻译： Cu合金薄膜含有Fe和P，余量基本上为Cu，其中Fe和P的含量满足以下所有条件（1）至（3），其中Fe 2 P 在200℃至500℃热处理1〜120分钟后，在Cu的晶界处析出：<？在线公式描述=“在线公式”末端=“铅”→> 1.4N ＆lt;＆lt;＆lt;＆lt;＆lt;＆lt; 3＆gt;＆lt; 1.3（1）＆lt; -formulae description =“In-line Formulas”end =“lead”？> N＆lt;＆lt;＆lt;＆lt;＆lt; P＆lt; “In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 12N + N > 0.5（3）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中N Fe表示Fe含量（原子百分数） ; N P表示P（原子百分比）的含量。
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2.发明申请Ag-base interconnecting film for flat panel display, Ag-base sputtering target and flat panel display 审中-公开用于平板显示器的Ag基互连膜，Ag基溅射靶和平板显示器公开(公告)号：US20050153162A1
公开(公告)日：2005-07-14
申请号：US10999027
申请日：2004-11-30
CPC分类号： C22C5/06 , C23C14/185 , C23C14/3414 , Y10T428/12896
摘要： An active matrix flat panel display includes pixels, TFTs for driving the pixels, and interconnecting lines connected to the TFTs. The interconnecting lines are formed by processing an interconnecting film of an Ag-base alloy containing 0.1 to 4.0 at % Nd and/or 0.01 to 1.5 at % Bi, and Ag as the remainder or an Ag-base alloy containing, in addition to Nd and/or Bi, one or some of elements including Cu, Au and Pd in a content in the range of 0.01 to 1.5 at %.
摘要翻译： 有源矩阵平板显示器包括像素，用于驱动像素的TFT和连接到TFT的互连线。 互连线通过加工含有0.1〜4.0at％的Nd和/或0.01〜1.5at％的Bi和Ag作为余量的Ag基合金的互连膜或除了Nd之外还含有Ag基合金 和/或Bi，包含Cu，Au和Pd中的一种或一些元素，其含量范围为0.01至1.5at％。
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公开(公告)号：US07154180B2
公开(公告)日：2006-12-26
申请号：US11106439
申请日：2005-04-15
CPC分类号： H01L29/66757 , C23C14/185 , C23C14/3414 , G02F1/133553 , H01L27/124 , H01L27/1255 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , Y10T428/12 , H01L2924/00
摘要： In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.
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4.发明授权公开(公告)号：US07928575B2
公开(公告)日：2011-04-19
申请号：US12465836
申请日：2009-05-14
IPC分类号： H01L23/02
CPC分类号： H01L29/66757 , C23C14/185 , C23C14/3414 , G02F1/133553 , H01L27/124 , H01L27/1255 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , Y10T428/12 , H01L2924/00
摘要： In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.
摘要翻译： 在包括由金属氧化物构成的第一电极和由与第一电极直接接触并电连接的铝合金膜构成的第二电极的电子设备中，铝合金膜和第一电极之间的接触界面被构造成 构成铝合金膜的合金成分的至少一部分以析出物或浓缩层的形式存在。 这种结构能够使铝合金膜和由金属氧化物组成的电极之间直接接触，并且能够消除这种电子器件中的阻挡金属及其制造技术。
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5.发明授权公开(公告)号：US07553754B2
公开(公告)日：2009-06-30
申请号：US11471595
申请日：2006-06-21
IPC分类号： H01L21/20
CPC分类号： H01L29/66757 , C23C14/185 , C23C14/3414 , G02F1/133553 , H01L27/124 , H01L27/1255 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , Y10T428/12 , H01L2924/00
摘要： In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.
摘要翻译： 在包括由金属氧化物构成的第一电极和由与第一电极直接接触并电连接的铝合金膜构成的第二电极的电子设备中，铝合金膜和第一电极之间的接触界面被构造成 构成铝合金膜的合金成分的至少一部分以析出物或浓缩层的形式存在。 这种结构能够使铝合金膜和由金属氧化物组成的电极之间直接接触，并且能够消除这种电子器件中的阻挡金属及其制造技术。
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公开(公告)号：US20060237849A1
公开(公告)日：2006-10-26
申请号：US11471595
申请日：2006-06-21
IPC分类号： H01L23/48
CPC分类号： H01L29/66757 , C23C14/185 , C23C14/3414 , G02F1/133553 , H01L27/124 , H01L27/1255 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , Y10T428/12 , H01L2924/00
摘要： In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.
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公开(公告)号：US07098539B2
公开(公告)日：2006-08-29
申请号：US10737121
申请日：2003-12-17
CPC分类号： H01L29/66757 , C23C14/185 , C23C14/3414 , G02F1/133553 , H01L27/124 , H01L27/1255 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , Y10T428/12 , H01L2924/00
摘要： In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.
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8.发明申请公开(公告)号：US20050184395A1
公开(公告)日：2005-08-25
申请号：US11106439
申请日：2005-04-15
IPC分类号： G02F1/1343 , C23C14/18 , C23C14/34 , G02F1/1335 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L21/77 , H01L21/84 , H01L23/52 , H01L27/12 , H01L27/13 , H01L29/45 , H01L29/49 , H01L29/786 , H01L23/48
CPC分类号： H01L29/66757 , C23C14/185 , C23C14/3414 , G02F1/133553 , H01L27/124 , H01L27/1255 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , Y10T428/12 , H01L2924/00
摘要： In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.
摘要翻译： 在包括由金属氧化物构成的第一电极和由与第一电极直接接触并电连接的铝合金膜构成的第二电极的电子设备中，铝合金膜和第一电极之间的接触界面被构造成 构成铝合金膜的合金成分的至少一部分以析出物或浓缩层的形式存在。 这种结构能够使铝合金膜和由金属氧化物组成的电极之间直接接触，并且能够消除这种电子器件中的阻挡金属及其制造技术。
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9.发明申请公开(公告)号：US20090218697A1
公开(公告)日：2009-09-03
申请号：US12465836
申请日：2009-05-14
IPC分类号： H01L23/48
CPC分类号： H01L29/66757 , C23C14/185 , C23C14/3414 , G02F1/133553 , H01L27/124 , H01L27/1255 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , Y10T428/12 , H01L2924/00
摘要： In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.
摘要翻译： 在包括由金属氧化物构成的第一电极和由与第一电极直接接触并电连接的铝合金膜构成的第二电极的电子设备中，铝合金膜和第一电极之间的接触界面被构造成 构成铝合金膜的合金成分的至少一部分以析出物或浓缩层的形式存在。 这种结构能够使铝合金膜和由金属氧化物组成的电极之间直接接触，并且能够消除这种电子器件中的阻挡金属及其制造技术。
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公开(公告)号：US07365810B2
公开(公告)日：2008-04-29
申请号：US11153331
申请日：2005-06-16
IPC分类号： G02F1/133
CPC分类号： G02F1/136227 , G02F1/1368
摘要： A display device and a method for production thereof. The display device comprises a substrate, thin film transistors and a transparent conductive film which are formed on the substrate, and an aluminum alloy film which electrically connects the thin film transistors to the transparent conductive film, such that there exists an oxide film of said aluminum alloy at the interface between said aluminum alloy film and said transparent conductive film, said oxide film having a thickness of 1 to 10 nm and containing oxygen in an amount no more than 44 atom %. The display device has the aluminum alloy film and the transparent conducive film in direct contact with each other, obviating the necessity of barrier metal between them.
摘要翻译： 一种显示装置及其制造方法。 显示装置包括形成在基板上的基板，薄膜晶体管和透明导电膜，以及将薄膜晶体管与透明导电膜电连接的铝合金膜，使得存在所述铝的氧化物膜 合金在所述铝合金膜和所述透明导电膜之间的界面处，所述氧化物膜具有1至10nm的厚度并且含有不超过44原子％的氧。 显示装置具有铝合金膜和透明导电膜彼此直接接触，从而避免了它们之间的屏障金属的需要。
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