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公开(公告)号：US4609933A
公开(公告)日：1986-09-02
申请号：US662080
申请日：1984-10-18
IPC分类号： H01L29/10 , H01L29/74 , H01L29/744 , H01L29/06
CPC分类号： H01L29/74 , H01L29/102 , H01L29/744
摘要： A gate turn-off thyristor including N-type emitter regions (4) formed in part in the surface layer of a P-type base layer (3), and P.sup.+ layer regions (10) of a high impurity concentration formed immediately beneath gate electrodes (8) in the P-type base layer (3) and immediately beneath the periphery of the N-type emitter regions (4), such that the depth of the P.sup.+ layer regions immediately beneath the gate electrodes (8) is selected to be deeper than the N-type emitter regions (4).
摘要翻译： 包括部分形成在P型基极层（3）的表面层中的N型发射极区域（4）的栅极截止晶闸管以及紧邻栅极电极形成的高杂质浓度的P +层区域（10） （3）中并且紧邻在N型发射极区域（4）的周围的下方，使得栅电极（8）正下方的P +层区域的深度被选择为 比N型发射极区域（4）更深。
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公开(公告)号：US4459855A
公开(公告)日：1984-07-17
申请号：US407362
申请日：1982-08-11
申请人： Kozo Yamagami
发明人： Kozo Yamagami
CPC分类号： G01L9/0042 , H01L29/84
摘要： An improved semiconductor pressure sensor of the silicon diaphragm type is disclosed. The sensor includes a pressure sensor device composed of a substrate of monocrystalline silicon, a diffused resistive layer formed on one surface of the substrate and a cavity formed in the other surface to create a thin-walled area that includes the diffused resistive layer with the cavity surrounded by a thick-walled leg portion. A hermetic sealable cap covers the one surface of the sensor device. A conductive diffused region from which an electrical signal can be picked up is provided in the leg portion electrically connected to the diffused resistive layer.
摘要翻译： 公开了一种改进的硅膜型半导体压力传感器。 该传感器包括由单晶硅衬底，形成在衬底的一个表面上的扩散电阻层和形成在另一个表面中的腔形成的压力传感器器件，以产生薄壁区域，该薄壁区域包括具有腔体的扩散电阻层 被一个厚壁的腿部包围。 密封的密封盖覆盖传感器装置的一个表面。 在与扩散电阻层电连接的支脚部分中设置有能够拾取电信号的导电扩散区域。
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公开(公告)号：US4634891A
公开(公告)日：1987-01-06
申请号：US592208
申请日：1984-03-22
申请人： Kozo Yamagami
发明人： Kozo Yamagami
CPC分类号： H03K17/725 , H01L25/072 , H01L25/18 , H01L2924/0002 , H03K2217/0036
摘要： A gate turn-off thyristor module having reduced circuit inductances. One or more gate turn-off thyristor chips are housed in a resin package. The main electrode and control terminals are disposed on an upper face of the package, while terminals for making connections to a snubber circuit are positioned at a different height from the main electrode control terminals. Preferably, the snubber circuit connecting terminals are located as close as possible to the respective electrode of their corresponding thyristor chip.
摘要翻译： 栅极关断晶闸管模块具有降低的电路电感。 一个或多个栅极截止晶闸管芯片容纳在树脂封装中。 主电极和控制端子设置在封装的上表面，而与缓冲电路连接的端子位于与主电极控制端子不同的高度。 优选地，缓冲电路连接端子尽可能靠近其相应晶闸管芯片的相应电极。
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