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    Multimedia processing system
    2.
    发明申请
    Multimedia processing system 审中-公开
    多媒体处理系统

    公开(公告)号：US20060015658A1

    公开(公告)日：2006-01-19

    申请号：US11177572

    申请日：2005-07-11

    申请人： Kazuyuki Uchida ,  Toshio Higuchi ,  Takashi Sakai ,  Akihiro Miyazaki ,  Michiko Matsumoto ,  Kuniaki Sugimoto

    发明人： Kazuyuki Uchida ,  Toshio Higuchi ,  Takashi Sakai ,  Akihiro Miyazaki ,  Michiko Matsumoto ,  Kuniaki Sugimoto

    IPC分类号： G06F13/12

    CPC分类号： H04N5/91 ,  H04N5/772

    摘要： A multimedia processing system of the present invention comprises an application, a multimedia abstracting unit, and a multimedia processing module. The multimedia processing abstracting unit is comprised of: a logic module; a stream path for connecting each logic module; a stream pipe for transmitting/receiving data between each logic module and the application; and a correspondence managing unit which carries structural information of the logic module, the stream pipe, and the stream path for making correspondence between with the processing module. The correspondence managing unit updates the structural information every time each logic module is created and connected according to the command from the application and, thereafter, at the point where the stream pipe and stream path are connected, receives a LOCK command indicating confirmation of structure from the application. Thereby one corresponding processing module is confirmed and started.

    摘要翻译： 本发明的多媒体处理系统包括应用，多媒体抽取单元和多媒体处理模块。 多媒体处理抽象单元包括：逻辑模块; 用于连接每个逻辑模块的流路径; 用于在每个逻辑模块和应用之间发送/接收数据的流管; 以及对应管理单元，其承载逻辑模块，流管和流路的结构信息，用于与处理模块之间的对应。 通信管理单元每当每个逻辑模块根据来自应用程序的命令创建和连接时更新结构信息，然后在流管道和流路径连接点接收指示结构确认的LOCK命令 应用程序。 从而确定并启动一个对应的处理模块。

    Insulated gate static induction thyristor with a split gate type shorted cathode structure
    4.
    发明授权
    Insulated gate static induction thyristor with a split gate type shorted cathode structure 失效
    绝缘栅静电感应晶闸管采用裂缝型短路阴极结构

    公开(公告)号：US5665987A

    公开(公告)日：1997-09-09

    申请号：US414346

    申请日：1995-03-31

    申请人： Kimihiro Muraoka ,  Yoshinobu Ohtsubo ,  Toshio Higuchi ,  Makoto Iguchi ,  Takashige Tamamushi

    发明人： Kimihiro Muraoka ,  Yoshinobu Ohtsubo ,  Toshio Higuchi ,  Makoto Iguchi ,  Takashige Tamamushi

    IPC分类号： H01L29/74 ,  H01L29/739 ,  H01L29/749 ,  H01L31/111

    CPC分类号： H01L29/7392

    摘要： In a gate insulated static induction thyristor with a split gate type shorted cathode structure, a first gate of the split gate structure is used as a cathode short-circuit gate and the cathode region is formed in the second gate. A MOS structure is formed on the second gate as a control gate electrode isolated therefrom. Since the channel integration density is high, the area efficiency increases. The MOS gate structure suppresses the minority carrier (hole) storage effect to permit high-speed swtching of the thyristor, and the shorted cathode structure provides for increased maximum controllable current/voltage durability. The split gate structure can be used in combination with planar, buried, recessed and double gate structures.

    摘要翻译： 在具有分裂栅型短路阴极结构的栅极绝缘静电感应晶闸管中，分离栅极结构的第一栅极用作阴极短路栅极，阴极区域形成在第二栅极中。 在第二栅极上形成作为与其隔离的控制栅电极的MOS结构。 由于通道集成密度高，面积效率提高。 MOS栅极结构抑制了少量载流子（空穴）储存效应，从而允许晶闸管高速切换，短路阴极结构提供了最大可控电流/电压耐久性。 分裂栅极结构可以与平面，埋入，凹陷和双栅结构结合使用。

    Insulated gate static induction thyristor with a split gate type shorted cathode structure
    5.
    发明授权
    Insulated gate static induction thyristor with a split gate type shorted cathode structure 失效
    绝缘栅静电感应晶闸管采用裂缝型短路阴极结构

    公开(公告)号：US5461242A

    公开(公告)日：1995-10-24

    申请号：US145436

    申请日：1993-10-29

    申请人： Kimihiro Muraoka ,  Yoshinobu Ohtsubo ,  Toshio Higuchi ,  Makoto Iguchi ,  Takashige Tamamushi

    发明人： Kimihiro Muraoka ,  Yoshinobu Ohtsubo ,  Toshio Higuchi ,  Makoto Iguchi ,  Takashige Tamamushi

    IPC分类号： H01L29/74 ,  H01L29/739 ,  H01L29/749

    CPC分类号： H01L29/7391 ,  H01L29/7392

    摘要： In a gate insulated static induction thyristor with a split gate type shorted cathode structure, a first gate region of the split gate structure is used as a cathode short-circuit gate and the cathode region is formed between the first and second gate regions. A MOS structure is formed on the second gate region as a insulated gate control gate region electrode isolated therefrom. The MOS gate structure suppresses the minority carrier (hole) storage effect to permit high-speed switching of the thyristor, and the shorted cathode structure provides for increased maximum controllable current/voltage durability. The split gate structure can be used in combination with planar, buried, recessed and double gate structures.

    摘要翻译： 在具有分裂栅型短路阴极结构的栅极绝缘静电感应晶闸管中，分离栅极结构的第一栅极区域用作阴极短路栅极，并且阴极区域形成在第一和第二栅极区域之间。 在第二栅极区域形成MOS结构，作为与其隔离的绝缘栅极控制栅极区域电极。 MOS栅极结构抑制了少量载流子（空穴）储存效应，从而允许晶闸管高速切换，短路阴极结构提供了最大可控电流/电压耐久性。 分裂栅极结构可以与平面，埋入，凹陷和双栅结构结合使用。