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    Process for producing olefin polymers
    6.
    发明授权
    Process for producing olefin polymers 失效
    生产烯烃聚合物的方法

    公开(公告)号：US5463000A

    公开(公告)日：1995-10-31

    申请号：US966850

    申请日：1992-10-27

    申请人： Yoshihiro Miyoshi ,  Hiroyuki Shiraishi ,  Kiyoshi Kawai ,  Hideaki Koga

    发明人： Yoshihiro Miyoshi ,  Hiroyuki Shiraishi ,  Kiyoshi Kawai ,  Hideaki Koga

    IPC分类号： C08F2/34 ,  C08F4/60 ,  C08F4/658 ,  C08F10/00 ,  C08F4/656

    CPC分类号： C08F10/00 ,  Y10S526/901 ,  Y10S526/904

    摘要： A process for producing an olefin polymer which Comprises homopolymerizing or copolymerizing an olefin in a gas phase by using a catalyst system comprising the following components A) and B):A) a solid catalyst component prepared by immobilizing a catalyst component comprising at least titanium, magnesium, halogen and an electron-donative compound on a porous polymer material, said solid catalyst component satisfying the following conditions (a), (b) and (c):(a) ethylene is preliminarily polymerized thereon in an amount of 50-200 g per gram of the component previously immobilized on the porous polymer material.(b) the preliminary polymerization of ethylene is carried out at most at a rate of 3 g/g-immobilized component-hour at least until the quantity of the preliminarily polymerized ethylene reaches 5 g/g-immobilized component, and(c) the preliminarily polymerized ethylene polymer has an intrinsic viscosity [.eta.] of 0.5 dl/g to 2.5 dl/g as measured in tetralin at 135.degree. C.; andB) an organoaluminum compound.Thus, an olefin polymer small in the extent of adhesion to polymerization reactor, small in the number of fish-eyes, low in the content of fine powder, high in bulk density and good in fluidity could be produced.

    摘要翻译： 一种制备烯烃聚合物的方法，其包括通过使用包含以下组分的催化剂体系在气相中均聚或共聚烯烃A）和B）：A）固体催化剂组分，其通过将至少包含钛， 镁，卤素和电子给体化合物，所述固体催化剂组分满足以下条件（a），（b）和（c）：（a）乙烯在其上预先聚合的量为50-200 g每克以前固定在多孔聚合物材料上的组分。 （b）乙烯的预聚合至多以3g / g固定成分时间的速度进行至少直到预先聚合的乙烯的量达到5g / g固定成分为止，（c） 预聚合的乙烯聚合物在135℃下在四氢化萘中测得的特性粘度η为0.5dl / g至2.5dl / g。 和B）有机铝化合物。 因此，可以产生在聚合反应器附着程度小，鱼眼数量小，细粉含量低，体积密度高，流动性好的烯烃聚合物。

    Solid catalyst component for olefin polymerization
    7.
    发明授权
    Solid catalyst component for olefin polymerization 失效
    用于烯烃聚合的固体催化剂组分

    公开(公告)号：US4556648A

    公开(公告)日：1985-12-03

    申请号：US639382

    申请日：1984-08-10

    申请人： Kiyoshi Kawai ,  Toshiyuki Kokubo ,  Yoshihiro Miyoshi

    发明人： Kiyoshi Kawai ,  Toshiyuki Kokubo ,  Yoshihiro Miyoshi

    IPC分类号： C08F4/00 ,  C08F4/02 ,  C08F4/60 ,  C08F4/6192 ,  C08F4/62 ,  C08F10/00 ,  C08F4/64 ,  C08F4/68

    CPC分类号： C08F10/00

    摘要： A solid catalyst component for olefin polymerization which is produced by reacting (A) a silicon compound with (B) a compound of transition metal of Groups IVa, Va and VIa of the periodic table to obtain a reaction mixture (I), reacting the reaction mixture (I) with (C) an organomagnesium compound selected from organomagnesium compounds or hydrocarbon-soluble complexes between an organomagnesium compound and an organometal compound capable of allowing said organomagnesium compound to be soluble in hydrocarbons to obtain an intermediate product (II), and contacting the intermediate product (II) with (D) an organoaluminum halide compound represented by the general formula R.sub.c.sup.1 AlX.sub.3-c (wherein R.sup.1 is an organic group containing 1 to 20 carbon atoms, X is a halogen and c is a number defined by 0

    摘要翻译： 一种用于烯烃聚合的固体催化剂组分，其通过使（A）硅化合物与（B）元素周期表的IVa，Va和VIa族的过渡金属的化合物反应得到反应混合物（I），使反应 混合物（I）与（C）选自有机镁化合物的有机镁化合物或有机镁化合物和能够使所述有机镁化合物可溶于烃的有机金属化合物之间的烃溶性络合物，以获得中间产物（II），并且 中间产物（II）与（D）由通式Rc1AlX3-c表示的有机铝卤化物（其中R1是含有1-20个碳原子的有机基团，X是卤素，c是0

    Method for manufacturing SiC semiconductor device
    9.
    发明授权
    Method for manufacturing SiC semiconductor device 有权
    SiC半导体器件的制造方法

    公开(公告)号：US07569496B2

    公开(公告)日：2009-08-04

    申请号：US11730600

    申请日：2007-04-03

    申请人： Hiroki Nakamura ,  Yoshihiro Miyoshi ,  Eiichi Okuno

    发明人： Hiroki Nakamura ,  Yoshihiro Miyoshi ,  Eiichi Okuno

    IPC分类号： H01L21/265 ,  H01L31/0312

    CPC分类号： H01L21/046 ,  H01L21/324 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7828 ,  Y10S438/931

    摘要： A method for manufacturing a SiC semiconductor device includes: forming an impurity layer in a SiC layer; and forming an oxide film on the SiC layer. The forming the impurity layer includes: implanting an impurity ion in the SiC layer; forming a carbon layer on the SiC layer; heating the SiC layer for activating the implanted impurity in the SiC layer covered with the carbon layer; and removing the carbon layer from the SiC layer. The forming the carbon layer includes: coating a resist on the SiC layer; and heating the resist for evaporating organic matter in the resist so that the resist is carbonized. The forming the oxide film is performed after the removing the carbon layer.

    摘要翻译： 一种制造SiC半导体器件的方法包括：在SiC层中形成杂质层; 在SiC层上形成氧化膜。 形成杂质层包括：在SiC层中注入杂质离子; 在所述SiC层上形成碳层; 加热SiC层以激活被碳层覆盖的SiC层中的注入杂质; 并从SiC层除去碳层。 形成碳层包括：在SiC层上涂覆抗蚀剂; 并加热抗蚀剂以蒸发抗蚀剂中的有机物质，使得抗蚀剂被碳化。 在去除碳层之后进行氧化膜的形成。

    Method for manufacturing SiC semiconductor device
    10.
    发明申请
    Method for manufacturing SiC semiconductor device 有权
    SiC半导体器件的制造方法

    公开(公告)号：US20080090383A1

    公开(公告)日：2008-04-17

    申请号：US11730600

    申请日：2007-04-03

    申请人： Hiroki Nakamura ,  Yoshihiro Miyoshi ,  Eiichi Okuno

    发明人： Hiroki Nakamura ,  Yoshihiro Miyoshi ,  Eiichi Okuno

    IPC分类号： H01L21/265 ,  H01L21/304

    CPC分类号： H01L21/046 ,  H01L21/324 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7828 ,  Y10S438/931

    摘要： A method for manufacturing a SiC semiconductor device includes: forming an impurity layer in a SiC layer; and forming an oxide film on the SiC layer. The forming the impurity layer includes: implanting an impurity ion in the SiC layer; forming a carbon layer on the SiC layer; heating the SiC layer for activating the implanted impurity in the SiC layer covered with the carbon layer; and removing the carbon layer from the SiC layer. The forming the carbon layer includes: coating a resist on the SiC layer; and heating the resist for evaporating organic matter in the resist so that the resist is carbonized. The forming the oxide film is performed after the removing the carbon layer.

    摘要翻译： 一种制造SiC半导体器件的方法包括：在SiC层中形成杂质层; 在SiC层上形成氧化膜。 形成杂质层包括：在SiC层中注入杂质离子; 在所述SiC层上形成碳层; 加热SiC层以激活被碳层覆盖的SiC层中的注入杂质; 并从SiC层除去碳层。 形成碳层包括：在SiC层上涂覆抗蚀剂; 并加热抗蚀剂以蒸发抗蚀剂中的有机物质，使得抗蚀剂被碳化。 在去除碳层之后进行氧化膜的形成。