公开(公告)号：US20080160750A1

公开(公告)日：2008-07-03

申请号：US11953127

申请日：2007-12-10

申请人： Toshiyuki TAKEWAKI ,  Manabu Iguchi ,  Daisuke Oshida ,  Hironori Toyoshima ,  Masayuki Hiroi ,  Takuji Onuma ,  Hiroaki Nanba ,  Ichiro Honma ,  Mieko Hasegawa ,  Yasuaki Tsuchiya ,  Toshiji Taiji ,  Takahara Kunugi

发明人： Toshiyuki TAKEWAKI ,  Manabu Iguchi ,  Daisuke Oshida ,  Hironori Toyoshima ,  Masayuki Hiroi ,  Takuji Onuma ,  Hiroaki Nanba ,  Ichiro Honma ,  Mieko Hasegawa ,  Yasuaki Tsuchiya ,  Toshiji Taiji ,  Takahara Kunugi

IPC分类号： H01L21/302 ,  H01L21/44

CPC分类号： H01L21/02074 ,  H01L21/76883

摘要： A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.

摘要翻译： 如下进行铜层的CMP后清洗工序。 依次使碱性水溶液，多元羧酸，BTA和碱性水溶液与设置有铜层的硅基板的主面接触。

公开(公告)号：US07955980B2

公开(公告)日：2011-06-07

申请号：US12543128

申请日：2009-08-18

申请人： Toshiyuki Takewaki ,  Manabu Iguchi ,  Daisuke Oshida ,  Hironori Toyoshima ,  Masayuki Hiroi ,  Takuji Onuma ,  Hiroaki Nanba ,  Ichiro Honma ,  Mieko Hasegawa ,  Yasuaki Tsuchiya ,  Toshiji Taiji ,  Takaharu Kunugi

发明人： Toshiyuki Takewaki ,  Manabu Iguchi ,  Daisuke Oshida ,  Hironori Toyoshima ,  Masayuki Hiroi ,  Takuji Onuma ,  Hiroaki Nanba ,  Ichiro Honma ,  Mieko Hasegawa ,  Yasuaki Tsuchiya ,  Toshiji Taiji ,  Takaharu Kunugi

IPC分类号： H01L21/44

CPC分类号： H01L21/02074 ,  H01L21/76883

摘要： A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.

摘要翻译： 如下进行铜层的CMP后清洗工序。 依次使碱性水溶液，多元羧酸，BTA和碱性水溶液与设置有铜层的硅基板的主面接触。

公开(公告)号：US08329584B2

公开(公告)日：2012-12-11

申请号：US13151867

申请日：2011-06-02

申请人： Toshiyuki Takewaki ,  Manabu Iguchi ,  Daisuke Oshida ,  Hironori Toyoshima ,  Masayuki Hiroi ,  Takuji Onuma ,  Hiroaki Nanba ,  Ichiro Honma ,  Mieko Hasegawa ,  Yasuaki Tsuchiya ,  Toshiji Taiji ,  Takaharu Kunugi

发明人： Toshiyuki Takewaki ,  Manabu Iguchi ,  Daisuke Oshida ,  Hironori Toyoshima ,  Masayuki Hiroi ,  Takuji Onuma ,  Hiroaki Nanba ,  Ichiro Honma ,  Mieko Hasegawa ,  Yasuaki Tsuchiya ,  Toshiji Taiji ,  Takaharu Kunugi

IPC分类号： H01L21/44

CPC分类号： H01L21/02074 ,  H01L21/76883

摘要： A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.

摘要翻译： 如下进行铜层的CMP后清洗工序。 依次使碱性水溶液，多元羧酸，BTA和碱性水溶液与设置有铜层的硅基板的主面接触。

公开(公告)号：US07601640B2

公开(公告)日：2009-10-13

申请号：US11953127

申请日：2007-12-10

申请人： Toshiyuki Takewaki ,  Manabu Iguchi ,  Daisuke Oshida ,  Hironori Toyoshima ,  Masayuki Hiroi ,  Takuji Onuma ,  Hiroaki Nanba ,  Ichiro Honma ,  Mieko Hasegawa ,  Yasuaki Tsuchiya ,  Toshiji Taiji ,  Takaharu Kunugi

发明人： Toshiyuki Takewaki ,  Manabu Iguchi ,  Daisuke Oshida ,  Hironori Toyoshima ,  Masayuki Hiroi ,  Takuji Onuma ,  Hiroaki Nanba ,  Ichiro Honma ,  Mieko Hasegawa ,  Yasuaki Tsuchiya ,  Toshiji Taiji ,  Takaharu Kunugi

IPC分类号： H01L21/44

CPC分类号： H01L21/02074 ,  H01L21/76883

摘要： A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.

摘要翻译： 如下进行铜层的CMP后清洗工序。 依次使碱性水溶液，多元羧酸，BTA和碱性水溶液与设置有铜层的硅基板的主面接触。

公开(公告)号：US08486836B2

公开(公告)日：2013-07-16

申请号：US13228123

申请日：2011-09-08

申请人： Daisuke Oshida ,  Toshiyuki Takewaki ,  Takuji Onuma ,  Koichi Ohto

发明人： Daisuke Oshida ,  Toshiyuki Takewaki ,  Takuji Onuma ,  Koichi Ohto

IPC分类号： H01L21/02

CPC分类号： H01L23/53238 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76883 ,  H01L21/76886 ,  H01L23/5223 ,  H01L23/5329 ,  H01L23/53295 ,  H01L28/60 ,  H01L2924/0002 ,  Y10S438/937 ,  H01L2924/00

摘要： A semiconductor device including: a substrate; an insulating film formed over the substrate; a copper interconnect, having a plurality of hillocks formed over the surface thereof, buried in the insulating film; a first insulating interlayer formed over the insulating film and the copper interconnect; a second insulating interlayer formed over the first insulating interlayer; and an electroconductive layer formed over the second insulating interlayer, wherein the top surface of at least one hillock highest of all hillocks is brought into contact with the lower surface of the second insulating interlayer is provided.

摘要翻译： 一种半导体器件，包括：衬底; 形成在基板上的绝缘膜; 铜互连，其表面上形成有多个隐藏在绝缘膜中的小丘; 形成在所述绝缘膜和所述铜互连上的第一绝缘夹层; 形成在所述第一绝缘夹层上的第二绝缘夹层; 以及形成在所述第二绝缘中间层上的导电层，其中提供了所有小丘中至少一个小丘的最高顶部表面与所述第二绝缘中间层的下表面接触。

公开(公告)号：US08030737B2

公开(公告)日：2011-10-04

申请号：US11971925

申请日：2008-01-10

申请人： Daisuke Oshida ,  Toshiyuki Takewaki ,  Takuji Onuma ,  Koichi Ohto

发明人： Daisuke Oshida ,  Toshiyuki Takewaki ,  Takuji Onuma ,  Koichi Ohto

IPC分类号： H01L21/02 ,  H01L29/92

CPC分类号： H01L23/53238 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76883 ,  H01L21/76886 ,  H01L23/5223 ,  H01L23/5329 ,  H01L23/53295 ,  H01L28/60 ,  H01L2924/0002 ,  Y10S438/937 ,  H01L2924/00

摘要： A semiconductor device including: a substrate; an insulating film formed over the substrate; a copper interconnect, having a plurality of hillocks formed over the surface thereof, buried in the insulating film; a first insulating interlayer formed over the insulating film and the copper interconnect; a second insulating interlayer formed over the first insulating interlayer; and an electroconductive layer formed over the second insulating interlayer, wherein the top surface of at least one hillock highest of all hillocks is brought into contact with the lower surface of the second insulating interlayer is provided.

摘要翻译： 一种半导体器件，包括：衬底; 形成在基板上的绝缘膜; 铜互连，其表面上形成有多个隐藏在绝缘膜中的小丘; 形成在所述绝缘膜和所述铜互连上的第一绝缘夹层; 形成在所述第一绝缘夹层上的第二绝缘夹层; 以及形成在所述第二绝缘中间层上的导电层，其中提供了所有小丘中至少一个小丘的最高顶部表面与所述第二绝缘中间层的下表面接触。

公开(公告)号：US09337093B2

公开(公告)日：2016-05-10

申请号：US13182944

申请日：2011-07-14

申请人： Daisuke Oshida ,  Ippei Kume ,  Makoto Ueki ,  Manabu Iguchi ,  Naoya Inoue ,  Takuya Maruyama ,  Toshiji Taiji ,  Hirokazu Katsuyama

发明人： Daisuke Oshida ,  Ippei Kume ,  Makoto Ueki ,  Manabu Iguchi ,  Naoya Inoue ,  Takuya Maruyama ,  Toshiji Taiji ,  Hirokazu Katsuyama

IPC分类号： H01L21/283 ,  H01L21/768 ,  H01L21/3105 ,  H01L23/532 ,  H01L21/02

CPC分类号： H01L21/76883 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/3105 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device includes an insulating film that is formed using a cyclic siloxane having a six-membered ring structure as a raw material; a trench that is formed in the insulating film; and a interconnect that is configured by a metal film embedded in the trench. In the semiconductor device, a modified layer is formed on a bottom surface of the trench, in which the number of carbon atoms and/or the number of nitrogen atoms per unit volume is larger than that inside the insulating film.

摘要翻译： 半导体器件包括使用具有六元环结构的环状硅氧烷作为原料形成的绝缘膜; 在绝缘膜中形成的沟槽; 以及由嵌入在沟槽中的金属膜构成的互连。 在半导体装置中，在沟槽的底面上形成改性层，其中每单位体积的碳原子数和/或氮原子数大于绝缘膜内部。

公开(公告)号：US07821101B2

公开(公告)日：2010-10-26

申请号：US12081194

申请日：2008-04-11

申请人： Toshiyuki Takewaki ,  Daisuke Oshida ,  Takuji Onuma

发明人： Toshiyuki Takewaki ,  Daisuke Oshida ,  Takuji Onuma

IPC分类号： H01L29/92

CPC分类号： H01L28/40

摘要： A semiconductor device includes a lower electrode provided on a semiconductor substrate, an upper electrode provided on the lower electrode to overlap a part of the lower electrode, a first insulating film provided between the lower electrode and the upper electrode, and a second insulating film provided in contact with an upper part of the upper electrode and on the upper part of the lower electrode, and having a density higher than that of the first insulating film, the second insulating film covering a side surface and a top surface of the upper electrode.

摘要翻译： 半导体器件包括设置在半导体衬底上的下电极，设置在下电极上以与下电极的一部分重叠的上电极，设置在下电极和上电极之间的第一绝缘膜和设置在下电极和上电极之间的第二绝缘膜 与上电极的上部和下电极的上部接触，并且具有比第一绝缘膜高的密度，第二绝缘膜覆盖上电极的侧表面和顶表面。

公开(公告)号：US20080237793A1

公开(公告)日：2008-10-02

申请号：US12073545

申请日：2008-03-06

申请人： Daisuke Oshida ,  Toshiyuki Takewaki ,  Takuji Onuma ,  Koichi Ohto

发明人： Daisuke Oshida ,  Toshiyuki Takewaki ,  Takuji Onuma ,  Koichi Ohto

IPC分类号： H01L29/00 ,  H01L21/20

CPC分类号： H01L28/84

摘要： A method of forming a semiconductor device, includes forming a lower electrode including a metal and a nitrogen on a semiconductor substrate, irradiating a reducing gas to a surface of the lower electrode, and irradiating a gas containing silicon to the surface of the lower electrode to form a projection containing silicide by reacting the metal with the silicon in an island shape on the surface of the lower electrode. Then, a capacitor film is formed on the lower electrode and the projection, and an upper electrode is formed on the capacitor film.

摘要翻译： 一种形成半导体器件的方法，包括在半导体衬底上形成包括金属和氮的下电极，将还原气体照射到下电极的表面，并将含硅的气体照射到下电极的表面，以 通过在下电极的表面上使金属与岛状的硅反应形成包含硅化物的突起。 然后，在下电极和突起上形成电容器膜，并且在电容器膜上形成上电极。

公开(公告)号：US07897475B2

公开(公告)日：2011-03-01

申请号：US12073545

申请日：2008-03-06

申请人： Daisuke Oshida ,  Toshiyuki Takewaki ,  Takuji Onuma ,  Koichi Ohto

发明人： Daisuke Oshida ,  Toshiyuki Takewaki ,  Takuji Onuma ,  Koichi Ohto

IPC分类号： H01L21/20

CPC分类号： H01L28/84

摘要： A method of forming a semiconductor device, includes forming a lower electrode including a metal and a nitrogen on a semiconductor substrate, irradiating a reducing gas to a surface of the lower electrode, and irradiating a gas containing silicon to the surface of the lower electrode to form a projection containing silicide by reacting the metal with the silicon in an island shape on the surface of the lower electrode. Then, a capacitor film is formed on the lower electrode and the projection, and an upper electrode is formed on the capacitor film.

摘要翻译： 一种形成半导体器件的方法，包括在半导体衬底上形成包括金属和氮的下电极，将还原气体照射到下电极的表面，并将含硅的气体照射到下电极的表面，以 通过在下电极的表面上使金属与岛状的硅反应形成包含硅化物的突起。 然后，在下电极和突起上形成电容器膜，并且在电容器膜上形成上电极。