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    CMOS compatible process for making a tunable negative differential resistance (NDR) device
    1.
    发明授权
    CMOS compatible process for making a tunable negative differential resistance (NDR) device 有权
    CMOS兼容过程，用于制造可调负差分电阻（NDR）器件

    公开(公告)号：US06596617B1

    公开(公告)日：2003-07-22

    申请号：US09602658

    申请日：2000-06-22

    申请人： Tsu-Jae King ,  David K.Y. Liu

    发明人： Tsu-Jae King ,  David K.Y. Liu

    IPC分类号： H01L2128

    CPC分类号： H01L29/7881 ,  G11C5/142 ,  H01L29/788 ,  H01L29/792

    摘要： A method of making an n-channel metal-insulator-semiconductor field-effect transistor (MISFET) that exhibits negative differential resistance in its output characteristic (drain current as a function of drain voltage) is disclosed. By implanting ions into a substrate that is later thermally oxidized, a number of temporary charge trapping sites can be established above a channel region of a transistor. The channel is also heavily doped, so that a strong electrical field can be generated to accelerate hot carriers into the temporary charge trapping sites. The insulating layer formed during the oxidation step is made sufficiently thick to prevent quantum tunnelingo of the hot carriers into a gate electrode. Other suitable and conventional processing steps are used to finalize completion of the fabrication of the NDR device so that the entire process is compatible and achieved with CMOS processing techniques.

    摘要翻译： 公开了一种制造在其输出特性（作为漏极电压的函数的漏极电流）中呈现负的差分电阻的n沟道金属 - 绝缘体 - 半导体场效应晶体管（MISFET）的方法。 通过将离子注入到稍后被热氧化的衬底中，可以在晶体管的沟道区上方建立许多临时电荷捕获位点。 该通道也是重掺杂的，因此可以产生强电场以将热载流子加速到临时电荷捕获位置。 在氧化步骤期间形成的绝缘层足够厚以防止热载流子的量子隧穿进入栅电极。 使用其它合适的和常规的处理步骤来完成NDR设备的制造完成，使得整个过程与CMOS处理技术相兼容并实现。

    NON-VOLATILE ONE-TIME-PROGRAMMABLE AND MULTIPLE-TIME PROGRAMMABLE MEMORY CONFIGURATION CIRCUIT
    2.
    发明申请
    NON-VOLATILE ONE-TIME-PROGRAMMABLE AND MULTIPLE-TIME PROGRAMMABLE MEMORY CONFIGURATION CIRCUIT 有权
    非易失性一次可编程和多时间可编程存储器配置电路

    公开(公告)号：US20120140564A1

    公开(公告)日：2012-06-07

    申请号：US13362687

    申请日：2012-01-31

    申请人： David K.Y. Liu

    发明人： David K.Y. Liu

    IPC分类号： G11C16/04 ,  G11C17/00

    CPC分类号： H03K19/0002 ,  G11C16/0441 ,  G11C17/14 ,  G11C2216/10 ,  G11C2216/26 ,  H01L27/11521 ,  H01L27/11558 ,  H01L27/11803 ,  H01L29/7885 ,  H03K19/177

    摘要： A programmable non-volatile configuration circuit uses a pair of non-volatile memory devices arranged in a pull-up and pull-down arrangement. The non-volatile memory devices have floating gates that overlaps a variable portion of a source/drain region. This allows a programming voltage for the device to be imparted to the floating gate through variable capacitive coupling, thus changing the state of the device. The invention can be used in environments to store configuration data for programmable logic devices, field programmable arrays, and many other applications.

    摘要翻译： 可编程非易失性配置电路使用以上拉和下拉布置布置的一对非易失性存储器件。 非易失性存储器件具有与源极/漏极区域的可变部分重叠的浮动栅极。 这允许通过可变电容耦合将器件的编程电压赋予浮置栅极，从而改变器件的状态。 本发明可用于存储用于可编程逻辑器件，现场可编程阵列和许多其它应用的配置数据的环境中。

    METHOD OF OPERATING INTEGRATED CIRCUIT EMBEDDED WITH NON-VOLATILE PROGRAMMABLE MEMORY HAVING VARIABLE COUPLING RELATED APPLICATION DATA
    3.
    发明申请
    METHOD OF OPERATING INTEGRATED CIRCUIT EMBEDDED WITH NON-VOLATILE PROGRAMMABLE MEMORY HAVING VARIABLE COUPLING RELATED APPLICATION DATA 有权
    使用具有可变耦合的非易失性可编程存储器嵌入的集成电路的操作方法相关应用数据

    公开(公告)号：US20110116314A1

    公开(公告)日：2011-05-19

    申请号：US13011606

    申请日：2011-01-21

    申请人： David K.Y. Liu ,  John Nicholas Gross

    发明人： David K.Y. Liu ,  John Nicholas Gross

    IPC分类号： G11C16/04

    CPC分类号： G11C16/0408 ,  G11C16/0416 ,  G11C2216/10 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11558 ,  H01L29/0696 ,  H01L29/42324 ,  H01L29/7883

    摘要： A programmable non-volatile device is operated with a floating gate that functions as a FET gate that overlaps a portion of a source/drain region and allows for variable coupling through geometry and/or biasing conditions. This allows a programming voltage for the device to be imparted to the floating gate through variable capacitive coupling, thus changing the state of the device. Multi-state embodiments are also possible. The invention can be used in environments such as data encryption, reference trimming, manufacturing ID, security ID, and many other applications.

    摘要翻译： 可编程非易失性器件用浮置栅极操作，该浮栅用作与源极/漏极区域的一部分重叠的FET栅极，并允许通过几何形状和/或偏置条件进行可变耦合。 这允许通过可变电容耦合将器件的编程电压赋予浮置栅极，从而改变器件的状态。 多状态实施例也是可能的。 本发明可以用于诸如数据加密，参考修整，制造ID，安全ID等许多应用的环境中。

    Integrated Circuit Embedded With Non-Volatile One-Time-Programmable And Multiple-Time Programmable Memory
    5.
    发明申请
    Integrated Circuit Embedded With Non-Volatile One-Time-Programmable And Multiple-Time Programmable Memory 有权
    嵌入非易失性一次性可编程和多时间可编程存储器的集成电路

    公开(公告)号：US20090114972A1

    公开(公告)日：2009-05-07

    申请号：US12264029

    申请日：2008-11-03

    申请人： David K.Y. Liu

    发明人： David K.Y. Liu

    IPC分类号： H01L29/788

    CPC分类号： H01L29/42324 ,  G11C16/0408 ,  G11C2216/10 ,  H01L27/11521 ,  H01L27/11558 ,  H01L29/66825 ,  H01L29/7885

    摘要： A programmable non-volatile device uses a floating gate that functions as a FET gate that overlaps a portion of a source/drain region. This allows a programming voltage for the device to be imparted to the floating gate through capacitive coupling, thus changing the state of the device. The invention can be used in environments such as data encryption, reference trimming, manufacturing ID, security ID, and many other applications.

    摘要翻译： 可编程非易失性器件使用浮置栅极，其作为与源极/漏极区域的一部分重叠的FET栅极。 这允许通过电容耦合将器件的编程电压赋予浮置栅极，从而改变器件的状态。 本发明可以用于诸如数据加密，参考修整，制造ID，安全ID等许多应用的环境中。

    NON-VOLATILE MEMORY PROGRAMMABLE THROUGH AREAL CAPACITIVE COUPLING
    7.
    发明申请
    NON-VOLATILE MEMORY PROGRAMMABLE THROUGH AREAL CAPACITIVE COUPLING 有权
    非易失性存储器可编程通过电容耦合

    公开(公告)号：US20100322010A1

    公开(公告)日：2010-12-23

    申请号：US12869469

    申请日：2010-08-26

    申请人： David K.Y. Liu

    发明人： David K.Y. Liu

    IPC分类号： G11C16/04

    CPC分类号： H01L29/42324 ,  G11C16/0408 ,  G11C2216/10 ,  H01L27/11521 ,  H01L27/11558 ,  H01L29/66825 ,  H01L29/7885

    摘要： A programmable non-volatile device is made which uses a floating gate that functions as a FET gate that overlaps a portion of a source/drain region. This allows a programming voltage for the device to be imparted to the floating gate through capacitive coupling, thus changing the state of the device. The invention can be used in environments such as data encryption, reference trimming, manufacturing ID, security ID, and many other applications.

    摘要翻译： 制造了一种可编程的非易失性器件，其使用用作与源极/漏极区域的一部分重叠的FET栅极的浮动栅极。 这允许通过电容耦合将器件的编程电压赋予浮置栅极，从而改变器件的状态。 本发明可以用于诸如数据加密，参考修整，制造ID，安全ID等许多应用的环境中。

    NON-VOLATILE ONE-TIME - PROGRAMMABLE AND MULTIPLE-TIME PROGRAMMABLE MEMORY CONFIGURATION CIRCUIT
    8.
    发明申请
    NON-VOLATILE ONE-TIME - PROGRAMMABLE AND MULTIPLE-TIME PROGRAMMABLE MEMORY CONFIGURATION CIRCUIT 有权
    非易失性一次性 - 可编程和多时间可编程存储器配置电路

    公开(公告)号：US20100165698A1

    公开(公告)日：2010-07-01

    申请号：US12650238

    申请日：2009-12-30

    申请人： David K.Y. Liu

    发明人： David K.Y. Liu

    IPC分类号： G11C17/00 ,  H03K19/177

    CPC分类号： H03K19/0002 ,  G11C16/0441 ,  G11C17/14 ,  G11C2216/10 ,  G11C2216/26 ,  H01L27/11521 ,  H01L27/11558 ,  H01L27/11803 ,  H01L29/7885 ,  H03K19/177

    摘要： A programmable non-volatile configuration circuit uses a pair of non-volatile memory devices arranged in a pull-up and pull-down arrangement. The non-volatile memory devices have floating gates that overlaps a variable portion of a source/drain region. This allows a programming voltage for the device to be imparted to the floating gate through variable capacitive coupling, thus changing the state of the device. The invention can be used in environments to store configuration data for programmable logic devices, field programmable arrays, and many other applications.

    摘要翻译： 可编程非易失性配置电路使用以上拉和下拉布置布置的一对非易失性存储器件。 非易失性存储器件具有与源极/漏极区域的可变部分重叠的浮动栅极。 这允许通过可变电容耦合将器件的编程电压赋予浮置栅极，从而改变器件的状态。 本发明可用于存储用于可编程逻辑器件，现场可编程阵列和许多其它应用的配置数据的环境中。

    METHOD OF OPERATING INTEGRATED CIRCUIT EMBEDDED WITH NON-VOLATILE ONE-TIME - PROGRAMMABLE AND MULTIPLE-TIME PROGRAMMABLE MEMORY
    10.
    发明申请
    METHOD OF OPERATING INTEGRATED CIRCUIT EMBEDDED WITH NON-VOLATILE ONE-TIME - PROGRAMMABLE AND MULTIPLE-TIME PROGRAMMABLE MEMORY 有权
    使用非易失性一次性可编程和多时间可编程存储器嵌入的集成电路的操作方法

    公开(公告)号：US20090116295A1

    公开(公告)日：2009-05-07

    申请号：US12264076

    申请日：2008-11-03

    申请人： David K.Y. Liu

    发明人： David K.Y. Liu

    IPC分类号： G11C16/06 ,  G11C17/00

    CPC分类号： H01L29/42324 ,  G11C16/0408 ,  G11C2216/10 ,  H01L27/11521 ,  H01L27/11558 ,  H01L29/66825 ,  H01L29/7885

    摘要： A programmable non-volatile device is operated using a floating gate that functions as a FET gate that overlaps a portion of a source/drain region. This allows a programming voltage for the device to be imparted to the floating gate through capacitive coupling, thus changing the state of the device. The invention can be used in environments such as data encryption, reference trimming, manufacturing ID, security ID, and many other applications.

    摘要翻译： 使用浮动栅极操作可编程非易失性器件，该浮栅用作与源极/漏极区域的一部分重叠的FET栅极。 这允许通过电容耦合将器件的编程电压赋予浮置栅极，从而改变器件的状态。 本发明可以用于诸如数据加密，参考修整，制造ID，安全ID等许多应用的环境中。