公开(公告)号：US07943981B2

公开(公告)日：2011-05-17

申请号：US12233073

申请日：2008-09-18

申请人： Tsunehiro Ino ,  Naoki Yasuda ,  Koichi Muraoka ,  Jun Fujiki ,  Shoko Kikuchi ,  Keiko Ariyoshi

发明人： Tsunehiro Ino ,  Naoki Yasuda ,  Koichi Muraoka ,  Jun Fujiki ,  Shoko Kikuchi ,  Keiko Ariyoshi

IPC分类号： H01L29/788

CPC分类号： H01L29/792 ,  H01L29/42348 ,  H01L29/513 ,  H01L29/518

摘要： A semiconductor memory element includes: a tunnel insulating film formed on a semiconductor substrate; a HfON charge storage film with Bevan clusters formed on the tunnel insulating film; a blocking film formed on the HfON charge storage film; and a gate electrode formed on the blocking film.

摘要翻译： 半导体存储元件包括：形成在半导体衬底上的隧道绝缘膜; 在隧道绝缘膜上形成具有Bevan簇的HfON电荷存储膜; 形成在HfON电荷存储膜上的阻挡膜; 以及形成在阻挡膜上的栅电极。

公开(公告)号：US20090212346A1

公开(公告)日：2009-08-27

申请号：US12233073

申请日：2008-09-18

申请人： Tsunehiro INO ,  Naoki Yasuda ,  Koichi Muraoka ,  Jun Fujiki ,  Shoko Kikuchi ,  Keiko Ariyoshi

发明人： Tsunehiro INO ,  Naoki Yasuda ,  Koichi Muraoka ,  Jun Fujiki ,  Shoko Kikuchi ,  Keiko Ariyoshi

IPC分类号： H01L47/00

CPC分类号： H01L29/792 ,  H01L29/42348 ,  H01L29/513 ,  H01L29/518

摘要： A semiconductor memory element includes: a tunnel insulating film formed on a semiconductor substrate; a HfON charge storage film with Bevan clusters formed on the tunnel insulating film; a blocking film formed on the HfON charge storage film; and a gate electrode formed on the blocking film.

摘要翻译： 半导体存储元件包括：形成在半导体衬底上的隧道绝缘膜; 在隧道绝缘膜上形成具有Bevan簇的HfON电荷存储膜; 形成在HfON电荷存储膜上的阻挡膜; 以及形成在阻挡膜上的栅电极。

公开(公告)号：US20100078704A1

公开(公告)日：2010-04-01

申请号：US12404648

申请日：2009-03-16

申请人： Tsunehiro Ino ,  Shosuke Fujii ,  Jun Fujiki ,  Akira Takashima ,  Masao Shingu ,  Daisuke Matsushita ,  Naoki Yasuda ,  Koichi Muraoka

发明人： Tsunehiro Ino ,  Shosuke Fujii ,  Jun Fujiki ,  Akira Takashima ,  Masao Shingu ,  Daisuke Matsushita ,  Naoki Yasuda ,  Koichi Muraoka

IPC分类号： H01L29/792 ,  H01L21/28

CPC分类号： H01L29/792 ,  H01L29/517 ,  H01L29/66833

摘要： A semiconductor storage element includes: a source region and a drain region provided in a semiconductor substrate; a tunnel insulating film provided on the semiconductor substrate between the source region and the drain region; a charge storage film provided on the tunnel insulating film; a block insulating film provided on the charge storage film; a gate electrode provided on the block insulating film; and a region containing a gas molecule, the region provided in a neighborhood of an interface between the charge storage film and the block insulating film.

摘要翻译： 半导体存储元件包括：设置在半导体衬底中的源极区域和漏极区域; 设置在所述源极区域和所述漏极区域之间的所述半导体衬底上的隧道绝缘膜; 设置在所述隧道绝缘膜上的电荷存储膜; 设置在电荷存储膜上的块状绝缘膜; 设置在所述块绝缘膜上的栅电极; 以及包含气体分子的区域，所述区域设置在电荷存储膜和块绝缘膜之间的界面附近。

公开(公告)号：US08569823B2

公开(公告)日：2013-10-29

申请号：US13235970

申请日：2011-09-19

申请人： Tsunehiro Ino ,  Masao Shingu ,  Shosuke Fujii ,  Akira Takashima ,  Daisuke Matsushita ,  Jun Fujiki ,  Naoki Yasuda ,  Yasushi Nakasaki ,  Koichi Muraoka

发明人： Tsunehiro Ino ,  Masao Shingu ,  Shosuke Fujii ,  Akira Takashima ,  Daisuke Matsushita ,  Jun Fujiki ,  Naoki Yasuda ,  Yasushi Nakasaki ,  Koichi Muraoka

IPC分类号： H01L29/788

CPC分类号： H01L29/513 ,  H01L21/28282 ,  H01L27/11568 ,  H01L29/517 ,  H01L29/66833 ,  H01L29/792

摘要： According to one embodiment, a semiconductor device includes a semiconductor region, a tunnel insulating film provided on the semiconductor region, a charge storage insulating film provided on the tunnel insulating film and having a hafnium oxide including a cubic region, a block insulating film provided on the charge storage insulating film, and a control gate electrode provided on the block insulating film.

摘要翻译： 根据一个实施例，半导体器件包括半导体区域，设置在半导体区域上的隧道绝缘膜，设置在隧道绝缘膜上并具有包含立方体区域的氧化铪的电荷存储绝缘膜，设置在 电荷存储绝缘膜和设置在块绝缘膜上的控制栅电极。

公开(公告)号：US20120068250A1

公开(公告)日：2012-03-22

申请号：US13235970

申请日：2011-09-19

申请人： Tsunehiro Ino ,  Masao Shingu ,  Shosuke Fujii ,  Akira Takashima ,  Daisuke Matsushita ,  Jun Fujiki ,  Naoki Yasuda ,  Yasushi Nakasaki ,  Koichi Muraoka

发明人： Tsunehiro Ino ,  Masao Shingu ,  Shosuke Fujii ,  Akira Takashima ,  Daisuke Matsushita ,  Jun Fujiki ,  Naoki Yasuda ,  Yasushi Nakasaki ,  Koichi Muraoka

IPC分类号： H01L29/788 ,  H01L21/28

CPC分类号： H01L29/513 ,  H01L21/28282 ,  H01L27/11568 ,  H01L29/517 ,  H01L29/66833 ,  H01L29/792

摘要： According to one embodiment, a semiconductor device includes a semiconductor region, a tunnel insulating film provided on the semiconductor region, a charge storage insulating film provided on the tunnel insulating film and having a hafnium oxide including a cubic region, a block insulating film provided on the charge storage insulating film, and a control gate electrode provided on the block insulating film.

摘要翻译： 根据一个实施例，半导体器件包括半导体区域，设置在半导体区域上的隧道绝缘膜，设置在隧道绝缘膜上并具有包含立方体区域的氧化铪的电荷存储绝缘膜，设置在 电荷存储绝缘膜和设置在块绝缘膜上的控制栅电极。

公开(公告)号：US07956405B2

公开(公告)日：2011-06-07

申请号：US12404648

申请日：2009-03-16

申请人： Tsunehiro Ino ,  Shosuke Fujii ,  Jun Fujiki ,  Akira Takashima ,  Masao Shingu ,  Daisuke Matsushita ,  Naoki Yasuda ,  Koichi Muraoka

发明人： Tsunehiro Ino ,  Shosuke Fujii ,  Jun Fujiki ,  Akira Takashima ,  Masao Shingu ,  Daisuke Matsushita ,  Naoki Yasuda ,  Koichi Muraoka

IPC分类号： H01L29/788

CPC分类号： H01L29/792 ,  H01L29/517 ,  H01L29/66833

摘要： A semiconductor storage element includes: a source region and a drain region provided in a semiconductor substrate; a tunnel insulating film provided on the semiconductor substrate between the source region and the drain region; a charge storage film provided on the tunnel insulating film; a block insulating film provided on the charge storage film; a gate electrode provided on the block insulating film; and a region containing a gas molecule, the region provided in a neighborhood of an interface between the charge storage film and the block insulating film.

摘要翻译： 半导体存储元件包括：设置在半导体衬底中的源极区域和漏极区域; 设置在所述源极区域和所述漏极区域之间的所述半导体衬底上的隧道绝缘膜; 设置在隧道绝缘膜上的电荷存储膜; 设置在电荷存储膜上的块状绝缘膜; 设置在所述块绝缘膜上的栅电极; 以及包含气体分子的区域，所述区域设置在电荷存储膜和块绝缘膜之间的界面附近。

公开(公告)号：US08415736B2

公开(公告)日：2013-04-09

申请号：US13527813

申请日：2012-06-20

申请人： Yasushi Nakasaki ,  Koichi Muraoka ,  Naoki Yasuda ,  Shoko Kikuchi

发明人： Yasushi Nakasaki ,  Koichi Muraoka ,  Naoki Yasuda ,  Shoko Kikuchi

IPC分类号： H01L29/788

CPC分类号： H01L29/792 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/513 ,  H01L29/7881

摘要： A MONOS type non-volatile semiconductor memory device which is capable of electrically writing, erasing, reading and retaining data, the memory device including source/drain regions, a first gate insulating layer, a first charge trapping layer formed on the first gate insulating layer, a second gate insulating layer formed on the first charge trapping layer, and a controlling electrode formed on the second gate insulating layer. The first charge trapping layer includes an insulating film containing Al and O as major elements and having a defect pair formed of a complex of an interstitial O atom and a tetravalent cationic atom substituting for an Al atom, the insulating film also having electron unoccupied levels within the range of 2 eV-6 eV as measured from the valence band maximum of Al2O3.

公开(公告)号：US20120256249A1

公开(公告)日：2012-10-11

申请号：US13527813

申请日：2012-06-20

申请人： Yasushi NAKASAKI ,  Koichi Muraoka ,  Naoki Yasuda ,  Shoko Kikuchi

发明人： Yasushi NAKASAKI ,  Koichi Muraoka ,  Naoki Yasuda ,  Shoko Kikuchi

IPC分类号： H01L29/792

CPC分类号： H01L29/792 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/513 ,  H01L29/7881

摘要： A MONOS type non-volatile semiconductor memory device which is capable of electrically writing, erasing, reading and retaining data, the memory device including source/drain regions, a first gate insulating layer, a first charge trapping layer formed on the first gate insulating layer, a second gate insulating layer formed on the first charge trapping layer, and a controlling electrode formed on the second gate insulating layer. The first charge trapping layer includes an insulating film containing Al and O as major elements and having a defect pair formed of a complex of an interstitial O atom and a tetravalent cationic atom substituting for an Al atom, the insulating film also having electron unoccupied levels within the range of 2 eV-6 eV as measured from the valence band maximum of Al2O3.

摘要翻译： 一种能够电写入，擦除，读取和保留数据的MONOS型非易失性半导体存储器件，所述存储器件包括源极/漏极区，第一栅极绝缘层，形成在第一栅极绝缘层上的第一电荷俘获层 形成在第一电荷俘获层上的第二栅极绝缘层，以及形成在第二栅极绝缘层上的控制电极。 第一电荷俘获层包括含有Al和O作为主要元素并且具有由间隙O原子和四价阳离子原子的复合物形成的缺陷对的绝缘膜，代替Al原子，绝缘膜还具有电子未占有的含量 从Al2O3的价带最大值测量的2eV-6eV的范围。

公开(公告)号：US08217444B2

公开(公告)日：2012-07-10

申请号：US13194099

申请日：2011-07-29

申请人： Yasushi Nakasaki ,  Koichi Muraoka ,  Naoki Yasuda ,  Shoko Kikuchi

发明人： Yasushi Nakasaki ,  Koichi Muraoka ,  Naoki Yasuda ,  Shoko Kikuchi

IPC分类号： H01L29/788

CPC分类号： H01L29/792 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/513 ,  H01L29/7881

摘要： A MONOS type non-volatile semiconductor memory device which is capable of electrically writing, erasing, reading and retaining data, the memory device including source/drain regions, a first gate insulating layer, a first charge trapping layer formed on the first gate insulating layer, a second gate insulating layer formed on the first charge trapping layer, and a controlling electrode formed on the second gate insulating layer. The first charge trapping layer includes an insulating film containing Al and O as major elements and having a defect pair formed of a complex of an interstitial O atom and a tetravalent cationic atom substituting for an Al atom, the insulating film also having electron unoccupied levels within the range of 2 eV-6 eV as measured from the valence band maximum of Al2O3.

摘要翻译： 一种能够电写入，擦除，读取和保留数据的MONOS型非易失性半导体存储器件，所述存储器件包括源极/漏极区，第一栅极绝缘层，形成在第一栅极绝缘层上的第一电荷俘获层 形成在第一电荷俘获层上的第二栅极绝缘层，以及形成在第二栅极绝缘层上的控制电极。 第一电荷俘获层包括含有Al和O作为主要元素并且具有由间隙O原子和四价阳离子原子的复合物形成的缺陷对的绝缘膜，代替Al原子，绝缘膜还具有电子未占有的含量 从Al2O3的价带最大值测量的2eV-6eV的范围。

公开(公告)号：US20090078983A1

公开(公告)日：2009-03-26

申请号：US12212128

申请日：2008-09-17

申请人： Yasushi Nakasaki ,  Koichi Muraoka ,  Naoki Yasuda ,  Shoko Kikuchi

发明人： Yasushi Nakasaki ,  Koichi Muraoka ,  Naoki Yasuda ,  Shoko Kikuchi

IPC分类号： H01L29/788 ,  H01L29/792

CPC分类号： H01L29/792 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/513 ,  H01L29/7881

摘要： A MONOS type non-volatile semiconductor memory device which is capable of electrically writing, erasing, reading and retaining data, the memory device including source/drain regions, a first gate insulating layer, a first charge trapping layer formed on the first gate insulating layer, a second gate insulating layer formed on the first charge trapping layer, and a controlling electrode formed on the second gate insulating layer. The first charge trapping layer includes an insulating film containing Al and O as major elements and having a defect pair formed of a complex of an interstitial O atom and a tetravalent cationic atom substituting for an Al atom, the insulating film also having electron unoccupied levels within the range of 2 eV-6 eV as measured from the valence band maximum of Al2O3.

摘要翻译： 一种能够电写入，擦除，读取和保留数据的MONOS型非易失性半导体存储器件，所述存储器件包括源极/漏极区，第一栅极绝缘层，形成在第一栅极绝缘层上的第一电荷俘获层 形成在第一电荷俘获层上的第二栅极绝缘层，以及形成在第二栅极绝缘层上的控制电极。 第一电荷俘获层包括含有Al和O作为主要元素并且具有由间隙O原子和四价阳离子原子的复合物形成的缺陷对的绝缘膜，代替Al原子，绝缘膜还具有电子未占有的含量 从Al2O3的价带最大值测量的2eV-6eV的范围。