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61 条记录 (耗时 0.022 秒)

    Method and apparatus for inspecting reticle
    1.
    发明授权
    Method and apparatus for inspecting reticle 有权
    检查掩模版的方法和装置

    公开(公告)号：US08064681B2

    公开(公告)日：2011-11-22

    申请号：US12292660

    申请日：2008-11-24

    申请人： Nobuhiro Okai ,  Shinji Okazaki ,  Yasunari Sohda ,  Yoshinori Nakayama

    发明人： Nobuhiro Okai ,  Shinji Okazaki ,  Yasunari Sohda ,  Yoshinori Nakayama

    IPC分类号： G06K9/00

    CPC分类号： G06K9/00 ,  G06K2209/19 ,  G06T7/0004

    摘要： The present invention provides a reticle inspection technology that enables a relative position between patterns to be evaluated for a pattern that may become a defect at the time of exposure to a sample, such as a wafer, in the double patterning technology on the same layer. An apparatus for inspecting a reticle for inspecting two reticles that are used in order to form patterns in the same layer on a substrate using the double patterning technology has: a coordinate information input unit for inputting coordinate information of a pattern of a measuring object; an image input unit for acquiring images of patterns of the two reticles based on the obtained coordinate information; an image overlay unit for overlaying the images of the two reticles at the same coordinates; a relative position calculation unit for finding the relative position between the patterns on the two reticles; an evaluation unit for assigning an index of the overlaying accuracy based on the relative position and evaluates whether the two reticles need repair; and an evaluation result output unit for outputting an evaluation result.

    摘要翻译： 本发明提供了一种掩模版检查技术，其能够在同一层上的双重图案化技术中，使图案之间的相对位置能够在暴露于样品（例如晶片）时成为缺陷的图案被评估。 用于检查用于检查用于使用双重图案形成技术在基板上形成图案的图案的两个掩模版的掩模版的装置具有：用于输入测量对象的图案的坐标信息的坐标信息输入单元; 图像输入单元，用于基于所获得的坐标信息获取两个标线图案的图像; 用于在相同坐标处叠加两个光罩的图像的图像叠加单元; 相对位置计算单元，用于找到两个标线之间的图案之间的相对位置; 评估单元，用于基于所述相对位置分配所述重叠精度的指标，并评估所述两个标线是否需要修理; 以及评价结果输出单元，用于输出评估结果。

    Electron beam lithography system and method
    6.
    发明授权
    Electron beam lithography system and method 失效

    公开(公告)号：US5424173A

    公开(公告)日：1995-06-13

    申请号：US158820

    申请日：1993-11-26

    申请人： Hiroaki Wakabayashi ,  Osamu Suga ,  Yoshinori Nakayama ,  Shinji Okazaki

    发明人： Hiroaki Wakabayashi ,  Osamu Suga ,  Yoshinori Nakayama ,  Shinji Okazaki

    IPC分类号： H01L21/027 ,  H01J37/317 ,  G03F7/20

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/0453 ,  H01J2237/31769 ,  H01J2237/31776 ,  Y10S430/143

    摘要： A system and method are provided for compensating for proximity effects between selected adjacent portions of pattern elements on an integrated circuit wafer where it is determined by simulation that undesirable resist patterns will result. The subject lithography system includes projecting an electron beam onto the wafer through an aperture plate of pattern elements to obtain the desired beam pattern. An aperture mask includes a plurality of first portions corresponding to first wafer circuit element portions spaced for avoiding proximity effects on the wafer and a plurality of second portions corresponding to second element portions spaced for obtaining proximity effects between elements on the wafer. The plurality of second portions are sized to have an increased adjacent spacing relative to a resultant adjacent spacing of the corresponding second element portions whereby the resultant adjacent spacing of the second element portions on the wafer is selectively reduced by the proximity effects. Alternatively, or in addition, a wire mesh is provided at the second portions of the aperture plate to reduce the beam intensity for corresponding reduction of the proximity effects.

    Electronic beam drawing apparatus
    8.
    发明授权
    Electronic beam drawing apparatus 失效
    电子束描绘装置

    公开(公告)号：US4983864A

    公开(公告)日：1991-01-08

    申请号：US328854

    申请日：1989-03-27

    申请人： Fumio Murai ,  Shinji Okazaki

    发明人： Fumio Murai ,  Shinji Okazaki

    IPC分类号： H01L21/027 ,  H01J37/02 ,  H01J37/248

    CPC分类号： H01J37/026 ,  H01J37/248

    摘要： An electron beam drawing apparatus having a grounded conductor for a screening operation in the neighborhood of a detection surface of a detector to detect a reflected electrons obtained by irradiating an electron onto a specimen and a secondary electron generated through the electron irradiation. The conductor has openings to pass therethrough the reflected electron and the secondary electron. As a result, the electric charge accumulated on an organic substance fixed onto the front surface of the detector through the electron irradiation is prevented from exerting an influence on the drawing electron beam.

    摘要翻译： 一种电子束描绘装置，具有用于在检测器的检测表面附近进行筛选操作的接地导体，以检测通过将电子照射到样本上获得的反射电子和通过电子辐射产生的二次电子。 导体具有通过反射电子和二次电子的开口。 结果，防止了通过电子照射固定在检测器的前表面上的有机物上累积的电荷对绘制电子束的影响。

    Method of forming extrinsic base by diffusion from polysilicon/silicide source and emitter by lithography
    9.
    发明授权
    Method of forming extrinsic base by diffusion from polysilicon/silicide source and emitter by lithography 失效
    通过光刻法从多晶硅/硅化物源和发射极扩散形成外部基极的方法

    公开(公告)号：US4729965A

    公开(公告)日：1988-03-08

    申请号：US855616

    申请日：1986-04-09

    申请人： Yoichi Tamaki ,  Kazuhiko Sagara ,  Norio Hasegawa ,  Shinji Okazaki ,  Toshihiko Takakura ,  Hirotaka Nishizawa

    发明人： Yoichi Tamaki ,  Kazuhiko Sagara ,  Norio Hasegawa ,  Shinji Okazaki ,  Toshihiko Takakura ,  Hirotaka Nishizawa

    IPC分类号： H01L29/73 ,  H01L21/033 ,  H01L21/28 ,  H01L21/285 ,  H01L21/331 ,  H01L29/08 ,  H01L29/732 ,  H01L27/12 ,  H01L21/265

    CPC分类号： H01L21/033 ,  H01L21/28525 ,  H01L29/0804 ,  Y10S438/98

    摘要： This invention relates to a method of producing a semiconductor device which is suitable for forming a bipolar transistor having less fluctuation of characteristics at a high production yield.In accordance with the present invention, a graft base (or an extrinsic base) 20 is formed by doping an impurity from a polycrystalline silicon film 13, while an emitter is formed by lithographic technique.Since the emitter is formed by lithographic technique, the position at which the emitter is to be formed unavoidably changes at the time of mask alignment, but its influence upon transistor characteristics is negligible. Therefore, bipolar transistors having far more uniform characteristics can be formed far more easily than with the method which forms the emitter by self-alignment.

    摘要翻译： PCT No.PCT / JP85 / 00432 Sec。 371日期：1986年4月9日 102（e）日期1986年4月9日PCT提交1985年7月31日PCT公布。 第WO86 / 01338号公报 日期：1986年2月27日。本发明涉及一种制造半导体器件的方法，该半导体器件适于形成具有较低产量波动特性的双极晶体管，其产率高。 根据本发明，通过从多晶硅膜13掺杂杂质形成移植物基底（或非本征基底）20，同时通过光刻技术形成发射体。 由于发射极是通过光刻技术形成的，因此在掩模取向时发射极的形成位置不可避免地会发生变化，但是它对晶体管特性的影响可以忽略不计。 因此，与通过自对准形成发射极的方法相比，可以形成具有更均匀特性的双极晶体管。

    Method of forming patterns
    10.
    发明授权
    Method of forming patterns 失效
    形成图案的方法

    公开(公告)号：US4403151A

    公开(公告)日：1983-09-06

    申请号：US250217

    申请日：1981-04-02

    申请人： Kozo Mochiji ,  Yozi Maruyama ,  Shinji Okazaki ,  Fumio Murai

    发明人： Kozo Mochiji ,  Yozi Maruyama ,  Shinji Okazaki ,  Fumio Murai

    IPC分类号： G03F7/039 ,  G03F7/20 ,  H05K3/00 ,  H05K3/06

    CPC分类号： G03F7/7045 ,  G03F7/039 ,  G03F7/2022 ,  H05K3/0082 ,  H05K3/064 ,  Y10S430/143

    摘要： Desired portions of the positive-type photoresist film are irradiated with an electron beam, and regions including at least the regions irradiated with the electron beam are further irradiated with ultraviolet light, followed by developing.The photosensitive radicals are destroyed in the regions which are irradiated with the electron beam. Therefore, the solubility of the photoresist film is not increased even when it is irradiated with ultraviolet light, and resist patterns are formed by developing.

    摘要翻译： 用电子束照射正型光致抗蚀剂膜的所需部分，并且至少使用电子束照射的区域的区域进一步用紫外线照射，然后显影。 在用电子束照射的区域中，感光性基团被破坏。 因此，即使用紫外线照射也不会增加光致抗蚀剂膜的溶解度，并且通过显影形成抗蚀剂图案。