摘要:
According to one embodiment, a memory management device includes a history management unit, an address translation table, an address management unit, and a data management unit. The history management unit manages an access history for data stored in a nonvolatile semiconductor memory. The address translation table includes a translation table of a logical address and a physical address corresponding to the data. The address management unit specifies, based on the access history, second data to be accessed after access to first data being stored in the nonvolatile semiconductor memory, and registers a second physical address corresponding to the second data in the address translation table in association with a first logical address corresponding to the first data. The data management unit reads out the second data from the nonvolatile semiconductor memory to a buffer.
摘要:
According to one embodiment, an interface control apparatus controls an interface to which a calibration is required in use. The interface control apparatus includes an interface controller configured to drive the interface, a storage device that stores a predicted value of a setting value after the calibration is carried out on the interface, the setting value to be set to the interface controller, and a setting unit configured to set the setting value to the interface controller based on the predicted value stored in the storage device.
摘要:
According to one embodiment, an information processing device includes a first determination section and a setting section. The first determination section determines inconsistency between first data and second data. The first data is stored in a nonvolatile semiconductor memory. The second data is corresponding to the first data and stored in a semiconductor memory. The setting section sets execution timing of write back based on access frequency information associated with the second data.
摘要:
According to one embodiment, a semiconductor device includes a NAND flash memory, an error correction unit, and a table. The NAND flash memory is configured to hold data. The error correction unit detects and corrects errors in the data. The table holds information on an error correction method associated with each piece of data. The error correction unit selects an error correction method to be applied for each piece of data in accordance with the information in the table.