公开(公告)号：US07679136B2

公开(公告)日：2010-03-16

申请号：US11334446

申请日：2006-01-19

申请人： Tsuyoshi Kachi ,  Yoshinori Hoshino

发明人： Tsuyoshi Kachi ,  Yoshinori Hoshino

IPC分类号： H01L23/62

CPC分类号： H01L29/7811 ,  H01L29/0653 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/456 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： The on-resistance of a semiconductor device having a power transistor with a trench gate structure is reduced. A power MIS-FET with a trench gate structure is so formed that the relation expressed as 0≦b≦a holds, where a is the distance between an end of an interlayer insulating layer over the upper face of a semiconductor region for source and the end (position on the periphery of a trench) of the upper face of the semiconductor region for source farther from the gate electrode; and b is the length of the overlap between the interlayer insulating layer and the upper face of the semiconductor region for source. (b is the distance between the position of the end of the interlayer insulating layer over the upper face of the semiconductor region for source and position on the periphery of a trench). As a result, the area of contact between source pads and the semiconductor regions for source is increased, and further the distance between the source pads and a channel forming region can be shortened. Therefore, the on-resistance of the power MIS-FET with a trench gate structure can be reduced.

摘要翻译： 具有沟槽栅极结构的功率晶体管的半导体器件的导通电阻减小。 具有沟槽栅极结构的功率MIS-FET被形成为使得表示为0＆nlE; b＆nlE; a的关系成立，其中a是源极半导体区域的上表面上的层间绝缘层的端部与 用于远离栅电极的源极的半导体区域的上表面的端部（沟槽的外围的位置）; b是层间绝缘层与源极半导体区域的上表面之间的重叠长度。 （b是在源极的半导体区域的上表面上的层间绝缘层的端部的位置与沟槽的周边上的位置之间的距离）。 结果，源极焊盘与源极半导体区域之间的接触面积增加，并且可以缩短源极焊盘与沟道形成区域之间的距离。 因此，可以减小具有沟槽栅极结构的功率MIS-FET的导通电阻。

公开(公告)号：US20060157779A1

公开(公告)日：2006-07-20

申请号：US11334446

申请日：2006-01-19

申请人： Tsuyoshi Kachi ,  Yoshinori Hoshino

发明人： Tsuyoshi Kachi ,  Yoshinori Hoshino

IPC分类号： H01L29/94

CPC分类号： H01L29/7811 ,  H01L29/0653 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/456 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： The on-resistance of a semiconductor device having a power transistor with a trench gate structure is reduced. A power MIS-FET with a trench gate structure is so formed that the relation expressed as 0≦b≦a holds, where a is the distance between an end of an interlayer insulating layer over the upper face of a semiconductor region for source and the end (position on the periphery of a trench) of the upper face of the semiconductor region for source farther from the gate electrode; and b is the length of the overlap between the interlayer insulating layer and the upper face of the semiconductor region for source. (b is the distance between the position of the end of the interlayer insulating layer over the upper face of the semiconductor region for source and position on the periphery of a trench). As a result, the area of contact between source pads and the semiconductor regions for source is increased, and further the distance between the source pads and a channel forming region can be shortened. Therefore, the on-resistance of the power MIS-FET with a trench gate structure can be reduced.

摘要翻译： 具有沟槽栅极结构的功率晶体管的半导体器件的导通电阻减小。 具有沟槽栅极结构的功率MIS-FET被形成为使得表示为0 <= b <= a的关系成立，其中a是源极半导体区域的上表面之间的层间绝缘层的端部之间的距离 以及用于远离栅电极的源极的半导体区域的上表面的端部（沟槽的外围的位置）; b是层间绝缘层与源极半导体区域的上表面之间的重叠长度。 （b是在源极的半导体区域的上表面上的层间绝缘层的端部的位置与沟槽的周边上的位置之间的距离）。 结果，源极焊盘与源极半导体区域之间的接触面积增加，并且可以缩短源极焊盘与沟道形成区域之间的距离。 因此，可以减小具有沟槽栅极结构的功率MIS-FET的导通电阻。

公开(公告)号：US08741699B2

公开(公告)日：2014-06-03

申请号：US13479360

申请日：2012-05-24

申请人： Daisuke Arai ,  Yoshito Nakazawa ,  Ikuo Hara ,  Tsuyoshi Kachi ,  Yoshinori Hoshino ,  Tsuyoshi Tabata

发明人： Daisuke Arai ,  Yoshito Nakazawa ,  Ikuo Hara ,  Tsuyoshi Kachi ,  Yoshinori Hoshino ,  Tsuyoshi Tabata

IPC分类号： H01L21/332

CPC分类号： H01L29/66325 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/66333 ,  H01L29/7395

摘要： Techniques capable of improving the yield of IGBTs capable of reducing steady loss, turn-off time, and turn-off loss are provided. Upon formation of openings in an interlayer insulting film formed on a main surface of a substrate, etching of a laminated insulating film of a PSG film and an SOG film and a silicon oxide film is once stopped at a silicon nitride film. Then, the silicon nitride film and the silicon oxide film are sequentially etched to form the openings. As a result, the openings are prevented from penetrating through an n-type source layer and a p+-type emitter layer having a thickness of 20 to 100 nm and reaching the substrate.

摘要翻译： 提供了能够提高能够降低稳定损耗，关断时间和关断损耗的IGBT的产量的技术。 在形成在基板的主表面上的层间绝缘膜中形成开口时，在氮化硅膜上一次停止对PSG膜的叠层绝缘膜，SOG膜和氧化硅膜的蚀刻。 然后，依次蚀刻氮化硅膜和氧化硅膜以形成开口。 结果，防止了开口穿过厚度为20至100nm的n型源极层和p +型发射极层并到达衬底。

公开(公告)号：US20070242420A1

公开(公告)日：2007-10-18

申请号：US11808324

申请日：2007-06-08

申请人： Yoshinori Hoshino ,  Tomoyuki Hongoh

发明人： Yoshinori Hoshino ,  Tomoyuki Hongoh

IPC分类号： H02B1/00

CPC分类号： G02B6/4453 ,  G02B6/4452

摘要： A rack mount apparatus is provided in an optical transmission apparatus. The rack mount apparatus includes a rack, a shelf mounted in the rack and a cross-sectional L-shaped Panel installed in the rack under a device to be rotatable so as to take an opened position and a closed position. This enables not only an easy and reliable connection of an interface cable in the rack mount apparatus without imposing a stress thereon but also a flexible determination or change of a connection position of the interface cable and even considerable improvement of the working efficiency.

摘要翻译： 在光传输装置中设置有机架安装装置。 机架安装装置包括机架，安装在机架中的搁架和安装在机架下方的可横向旋转以便打开位置和闭合位置的横截面的L形面板。 这不仅能够容易且可靠地将接口电缆连接到机架安装设备中，而不会在其上施加应力，而且可以灵活地确定或改变接口电缆的连接位置，甚至可以显着提高工作效率。

公开(公告)号：US5375652A

公开(公告)日：1994-12-27

申请号：US103683

申请日：1993-08-10

申请人： Katsuki Matsunaga ,  Yasushi Kojima ,  Naoya Yamazaki ,  Kiyoshi Yoshida ,  Yoshinori Hoshino

发明人： Katsuki Matsunaga ,  Yasushi Kojima ,  Naoya Yamazaki ,  Kiyoshi Yoshida ,  Yoshinori Hoshino

IPC分类号： F28F3/02 ,  H01L23/40 ,  H05K7/20 ,  F28F7/00

CPC分类号： F28F3/02 ,  H01L23/4093 ,  H01L2924/0002

摘要： A heat radiating apparatus for a semiconductor device, in which said semiconductor device mounted on a circuit board is cooled by a radiator. The radiator is provided with a stepped portion, and fixing spring hardware having slit grooves is provided with a notch engaging with the stepped portion, so that the end of radiator is brought into contact with the outer surface of the semiconductor device when the stepped portion of the radiator engages with the notch portion of the fixing spring hardware. The stepped portion of the radiator is constituted of two stages, and the notch of the fixing spring hardware is provided with two notch portions engaging with the two-stage stepped portions of the radiator, respectively, so that the larger-diameter portion of the two-stage stepped portions of the radiator engages with the farthermost portion of the notch. Further, a male threaded portion is installed near the end of the radiator so that the male threaded portion of the radiator is threadedly fixed to the farthermost portion of the notch of the fixing spring hardware.

摘要翻译： 一种用于半导体器件的散热装置，其中安装在电路板上的所述半导体器件由散热器冷却。 散热器设置有阶梯部，具有狭缝槽的固定弹簧五金具有与台阶部接合的切口，使得散热器的端部与半导体器件的外表面接触， 散热器与固定弹簧五金件的切口部接合。 散热器的台阶部分由两段构成，固定弹簧五金件的槽口分别设置有与散热器的两级台阶部分相接合的两个切口部分，使得两者的较大直径部分 - 散热器的台阶部分与凹口的最远部分接合。 此外，阳螺纹部分安装在散热器的端部附近，使得散热器的阳螺纹部分螺纹固定到固定弹簧五金件的凹口的最远部分。

公开(公告)号：US08469203B2

公开(公告)日：2013-06-25

申请号：US11808324

申请日：2007-06-08

申请人： Yoshinori Hoshino ,  Tomoyuki Hongoh

发明人： Yoshinori Hoshino ,  Tomoyuki Hongoh

IPC分类号： A47F7/00

CPC分类号： G02B6/4453 ,  G02B6/4452

摘要： A rack mount apparatus is provided in an optical transmission apparatus. The rack mount apparatus includes a rack, a shelf mounted in the rack and a cross-sectional L-shaped Panel installed in the rack under a device to be rotatable so as to take an opened position and a closed position. This enables not only an easy and reliable connection of an interface cable in the rack mount apparatus without imposing a stress thereon but also a flexible determination or change of a connection position of the interface cable and even considerable improvement of the working efficiency.

摘要翻译： 在光传输装置中设置有机架安装装置。 机架安装装置包括机架，安装在机架中的搁架和安装在机架下方的可横向旋转以便打开位置和闭合位置的横截面的L形面板。 这不仅能够容易且可靠地将接口电缆连接到机架安装设备中，而不会在其上施加应力，而且可以灵活地确定或改变接口电缆的连接位置，甚至可以显着提高工作效率。

公开(公告)号：US08465331B2

公开(公告)日：2013-06-18

申请号：US13247511

申请日：2011-09-28

申请人： Keishi Shimowake ,  Yoshinori Hoshino

发明人： Keishi Shimowake ,  Yoshinori Hoshino

IPC分类号： H01R9/22

CPC分类号： H01R9/24 ,  H01R4/34 ,  Y10T307/25

摘要： A power terminal block includes a base made of an insulator, a plurality of power terminals electrically insulated from each other and disposed on the base, and a plurality of terminal bases, each terminal base including a base connecting part made of a conductor and electrically coupled to the power terminals, and a first conductor connecting part made of a conductor, the first conductor connecting part being physically and electrically coupled to the base connecting part, the base connecting part and the first conductor connecting part being provided at different heights, wherein adjoining terminal bases, electrically coupled to power terminals supplied with currents with different electrical potentials, are coupled with the first conductor connecting parts of adjoining terminal bases disposed in different directions.

摘要翻译： 电源端子块包括由绝缘体制成的基座，彼此电绝缘并设置在基座上的多个电源端子和多个端子基座，每个端子基座包括由导体制成的基座连接部分，并且电耦合 电源端子和由导体制成的第一导体连接部分，第一导体连接部分物理地和电耦合到基座连接部分，基座连接部分和第一导体连接部分设置在不同的高度处，其中邻接的 电连接到提供有不同电位的电流的电源端子的端子台与设置在不同方向上的相邻端子台的第一导体连接部分耦合。

公开(公告)号：US20100209063A1

公开(公告)日：2010-08-19

申请号：US12702558

申请日：2010-02-09

申请人： Yoshinori Hoshino ,  Hideo Araki ,  Hiroshi Katagiri

发明人： Yoshinori Hoshino ,  Hideo Araki ,  Hiroshi Katagiri

IPC分类号： G02B6/00

CPC分类号： G02B6/3897 ,  G02B6/3825

摘要： A patch panel system includes a base panel having an array of openings and an array of engageable portions provided adjacent to the openings, and a first panel having a first opening and a first engageable portion which is arranged to be cooperatively engageable with the corresponding one of the engageable portions of the base panel, the first opening being configured to accommodate a first adapter, the corresponding of the openings in the base panel being configured to receive the first adapter therein.

摘要翻译： 接线板系统包括具有开口阵列和与开口相邻设置的可接合部分的阵列的基板，以及具有第一开口和第一可接合部分的第一面板，该第一开口和第一可接合部分被配置为可以与相应的一个 所述基板的可接合部分，所述第一开口构造成容纳第一适配器，所述基板中的所述开口对应的构造成在其中容纳所述第一适配器。

公开(公告)号：US20080163482A1

公开(公告)日：2008-07-10

申请号：US12003937

申请日：2008-01-03

申请人： Yoshinori Hoshino ,  Naoya Yamazaki ,  Hiroshi Katagiri ,  Hideaki Matsumoto

发明人： Yoshinori Hoshino ,  Naoya Yamazaki ,  Hiroshi Katagiri ,  Hideaki Matsumoto

IPC分类号： H01R43/00 ,  B23P19/00

CPC分类号： H01R9/223 ,  H01R9/2416

摘要： According to an aspect of an embodiment, a wiring connection apparatus comprises a tray including a plurality of wiring connection members for connecting a plurality of wiring and a tray holder body, which holds the tray, wherein the tray is rotatably provided in the tray holder body, and a wiring introduction opening for introducing the plurality of wiring into the tray is formed in proximity to an axis of rotation of the tray.

摘要翻译： 根据实施例的一个方面，一种布线连接装置包括托盘，托盘包括用于连接多个布线的多个布线连接构件和保持托盘的托盘托架主体，其中托盘可旋转地设置在托盘托架主体中 并且用于将多个布线引入托盘的布线引入开口形成在托盘的旋转轴线附近。

公开(公告)号：US07027595B2

公开(公告)日：2006-04-11

申请号：US09814226

申请日：2001-03-21

申请人： Takehide Miyazaki ,  Kazuhiro Iino ,  Naoya Yamazaki ,  Tomoyuki Hongoh ,  Yoshinori Hoshino ,  Yoshiaki Tada

发明人： Takehide Miyazaki ,  Kazuhiro Iino ,  Naoya Yamazaki ,  Tomoyuki Hongoh ,  Yoshinori Hoshino ,  Yoshiaki Tada

IPC分类号： H04M1/00 ,  H04M9/00

CPC分类号： H05K7/1452 ,  H04Q1/035 ,  H04Q1/10 ,  H04Q1/116 ,  H04Q2201/02 ,  H04Q2201/12 ,  H04Q2201/14

摘要： A telecommunications apparatus that has a substantially box-shaped subrack having a back wiring board mounting a connector and a plurality of shell-type plug-in units inserted in the subrack so that a connector of each of the plug-in units is connected to the connector of the subrack, further includes a flexible, electrically conductive seal member elastically deformedly disposed between a lateral surface of the plug-in unit inserted into the subrack and an interior portion of the subrack so as to enclose both the plug-in unit connector.