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16 条记录 (耗时 0.034 秒)

    SUBSTRATE PROCESSING APPARATUS AND SIDE WALL COMPONENT
    5.
    发明申请
    SUBSTRATE PROCESSING APPARATUS AND SIDE WALL COMPONENT 审中-公开
    基板加工装置和侧壁组件

    公开(公告)号：US20070227663A1

    公开(公告)日：2007-10-04

    申请号：US11691863

    申请日：2007-03-27

    申请人： Shosuke Endoh ,  Tsuyoshi Moriya ,  Akitaka Shimizu

    发明人： Shosuke Endoh ,  Tsuyoshi Moriya ,  Akitaka Shimizu

    IPC分类号： C23F1/00

    CPC分类号： H01J37/32477

    摘要： a substrate processing apparatus that enables abnormal electrical discharges and metal contamination to be prevented from occurring. A processing chamber is configured to house and carry out predetermined plasma processing on a substrate. A lower electrode is disposed on a bottom portion of the processing chamber and has the substrate mounted thereon. An upper electrode is disposed in a ceiling portion of the processing chamber. A side wall component covering a side wall of the processing chamber faces onto a processing space between the upper electrode and the lower electrode. The side wall component has at least one electrode layer to which a DC voltage is applied. An insulating portion made of an insulating material is present at least between the electrode layer and the processing space and covers the electrode layer. The insulating portion is formed by thermally spraying the insulating material.

    摘要翻译： 能够防止发生异常放电和金属污染的基板处理装置。 处理室配置成容纳并执行衬底上的预定等离子体处理。 下电极设置在处理室的底部，并且其上安装有基板。 上电极设置在处理室的顶部。 覆盖处理室的侧壁的侧壁部件面向上电极和下电极之间的处理空间。 侧壁部件具有至少一个施加了直流电压的电极层。 至少在电极层和处理空间之间存在由绝缘材料制成的绝缘部分并且覆盖电极层。 绝缘部分通过热喷涂绝缘材料形成。

    Plasma processing apparatus and focus ring
    8.
    发明授权
    Plasma processing apparatus and focus ring 有权
    等离子体处理装置和聚焦环

    公开(公告)号：US08114247B2

    公开(公告)日：2012-02-14

    申请号：US12941701

    申请日：2010-11-08

    申请人： Shosuke Endoh ,  Shinji Himori

    发明人： Shosuke Endoh ,  Shinji Himori

    IPC分类号： H01L21/3065 ,  H01L21/205

    CPC分类号： H01L21/67069 ,  H01J37/32642 ,  Y10T279/23

    摘要： A plasma processing apparatus and a focus ring enables to perform uniform plasma processing over the entire surface of a substrate to be processed to thereby improve in-surface uniformity of plasma processing compared with conventional cases. The focus ring is disposed on a susceptor 2, which serves to mount thereon a semiconductor wafer W and further functions as a lower electrode, to surround a periphery of the semiconductor wafer W. The focus ring 6 includes a ring member of a thin plate shape disposed to surround the periphery of the wafer W while maintaining a gap therebetween and a lower ring body installed below the semiconductor wafer and the ring member of the thin plate shape.

    摘要翻译： 等离子体处理装置和聚焦环能够在待处理的基板的整个表面上进行均匀的等离子体处理，从而提高等离子体处理的表面均匀性，与常规情况相比。 聚焦环设置在基座2上，该基座2用于在其上安装半导体晶片W，并且还用作下部电极，以围绕半导体晶片W的周围。聚焦环6包括薄板形状的环形构件 设置成围绕晶片W的周边保持间隙，并且安装在半导体晶片下方的下环体和薄板形状的环构件。

    PLASMA PROCESSING APPARATUS AND FOCUS RING
    9.
    发明申请
    PLASMA PROCESSING APPARATUS AND FOCUS RING 有权
    等离子体加工设备和聚焦环

    公开(公告)号：US20110048643A1

    公开(公告)日：2011-03-03

    申请号：US12941701

    申请日：2010-11-08

    申请人： Shosuke Endoh ,  Shinji Himori

    发明人： Shosuke Endoh ,  Shinji Himori

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/67069 ,  H01J37/32642 ,  Y10T279/23

    摘要： A plasma processing apparatus and a focus ring enables to perform uniform plasma processing over the entire surface of a substrate to be processed to thereby improve in-surface uniformity of plasma processing compared with conventional cases. The focus ring is disposed on a susceptor 2, which serves to mount thereon a semiconductor wafer W and further functions as a lower electrode, to surround a periphery of the semiconductor wafer W. The focus ring 6 includes a ring member of a thin plate shape disposed to surround the periphery of the wafer W while maintaining a gap therebetween and a lower ring body installed below the semiconductor wafer and the ring member of the thin plate shape.

    摘要翻译： 等离子体处理装置和聚焦环能够在待处理的基板的整个表面上进行均匀的等离子体处理，从而提高等离子体处理的表面均匀性，与常规情况相比。 聚焦环设置在基座2上，该基座2用于在其上安装半导体晶片W，并且还用作下部电极，以围绕半导体晶片W的周围。聚焦环6包括薄板形状的环形构件 设置成围绕晶片W的周边保持间隙，并且安装在半导体晶片下方的下环体和薄板形状的环构件。

    Processing apparatus and gas discharge suppressing member
    10.
    发明授权
    Processing apparatus and gas discharge suppressing member 有权
    处理装置和气体放电抑制构件

    公开(公告)号：US07622017B2

    公开(公告)日：2009-11-24

    申请号：US10856797

    申请日：2004-06-01

    申请人： Shinji Himori ,  Shosuke Endoh ,  Kazuya Nagaseki ,  Tomoya Kubota ,  Daisuke Hayashi

    发明人： Shinji Himori ,  Shosuke Endoh ,  Kazuya Nagaseki ,  Tomoya Kubota ,  Daisuke Hayashi

    IPC分类号： C23C16/509 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306

    CPC分类号： H01L21/6831 ,  H01J2237/2001 ,  H01L21/67069

    摘要： A processing apparatus for performing a process on a surface of an object to be processed by applying a high frequency power to an electrode installed in an airtight processing chamber to convert a processing gas introduced therein into a plasma, includes a thermal transfer gas feed pathway for supplying a thermal transfer gas for controlling a temperature of the object to be processed to a minute space between the object to be processed and a holding unit installed on the electrode for attracting and holding the object to be processed through an inner portion of an insulating member disposed under the electrode. A portion of the thermal transfer gas feed pathway, which passes through the inner portion of the insulating member, is formed in a zigzag shape or a spiral shape with respect to a normal direction of a holding surface of the holding unit.

    摘要翻译： 一种处理装置，用于通过向安装在气密处理室中的电极施加高频功率以将其中引入的等离子体中的处理气体转换为对等待处理对象的表面进行处理，所述处理装置包括：热传递气体供给路径， 将待传送物体的温度控制在被处理体的微小空间和安装在电极上的保持单元之间的热转印气体，用于通过绝缘构件的内部吸引并保持待处理物体 设置在电极下方。 通过绝缘构件的内部的热传递气体供给路径的一部分相对于保持单元的保持面的法线方向形成Z字形或螺旋状。