公开(公告)号：US09552832B2

公开(公告)日：2017-01-24

申请号：US14972018

申请日：2015-12-16

Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I

Inventor： Alan S Edelstein

IPC: G11B7/135 ,  G11B5/02 ,  G11B5/09 ,  G11B5/012 ,  G11B5/48 ,  G11C11/16 ,  G11C13/00 ,  H01L27/22 ,  G11C13/04 ,  G11C19/08 ,  G11B5/00

CPC classification number: G11B5/09 ,  G11B5/012 ,  G11B5/4866 ,  G11B2005/0021 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/0004 ,  G11C13/0061 ,  G11C13/0069 ,  G11C13/04 ,  G11C19/0808 ,  G11C2013/0078 ,  G11C2013/008 ,  G11C2013/0092 ,  H01L27/222

Abstract: A nonvolatile memory comprising at least one ferromagnetic region having permeability which changes from a first state to a second state of lower permeability upon heating; at least one laser operatively associated with the at least one ferromagnetic region which selectively provides heat to the ferromagnetic region to change its p permeability; and a plurality of connectors operatively connected to the at least one laser and adapted to be connected to a current source that provides a current which causes the laser to change the at least one ferromagnetic region from a first state to a second state. Optionally, the memory is arranged as an array of memory cells. Optionally, each cell has a magnetic field sensor operatively associated therewith. Optionally, the nonvolatile memory is radiation hard. Also, a method of recording data by heating at least one ferromagnetic region to change its permeability.

Abstract translation: 一种非易失性存储器，包括至少一个具有从加热时的第一状态变为低渗透性的第二状态的磁导率的铁磁区域; 至少一个激光器，其与所述至少一个铁磁区域可操作地相关联，所述至少一个铁磁区域选择性地向所述铁磁区域提供热量以改变其p导磁率; 以及可操作地连接到所述至少一个激光器并且适于连接到电流源的多个连接器，所述电流源提供使所述激光器将所述至少一个铁磁区域从第一状态改变到第二状态的电流。 可选地，存储器被布置为存储器单元的阵列。 可选地，每个单元具有与其可操作地相关联的磁场传感器。 可选地，非易失性存储器是辐射硬的。 另外，通过加热至少一个铁磁区域来改变其磁导率来记录数据的方法。

公开(公告)号：US20160104502A1

公开(公告)日：2016-04-14

申请号：US14972018

申请日：2015-12-16

Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I

Inventor： Alan S Edelstein

IPC: G11B5/09 ,  G11B5/48 ,  G11B5/012

CPC classification number: G11B5/09 ,  G11B5/012 ,  G11B5/4866 ,  G11B2005/0021 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/0004 ,  G11C13/0061 ,  G11C13/0069 ,  G11C13/04 ,  G11C19/0808 ,  G11C2013/0078 ,  G11C2013/008 ,  G11C2013/0092 ,  H01L27/222

Abstract: A nonvolatile memory comprising at least one ferromagnetic region having permeability which changes from a first state to a second state of lower permeability upon heating; at least one laser operatively associated with the at least one ferromagnetic region which selectively provides heat to the ferromagnetic region to change its p permeability; and a plurality of connectors operatively connected to the at least one laser and adapted to be connected to a current source that provides a current which causes the laser to change the at least one ferromagnetic region from a first state to a second state. Optionally, the memory is arranged as an array of memory cells. Optionally, each cell has a magnetic field sensor operatively associated therewith. Optionally, the nonvolatile memory is radiation hard. Also, a method of recording data by heating at least one ferromagnetic region to change its permeability.

Abstract translation: 一种非易失性存储器，包括至少一个具有从加热时的第一状态变为低渗透性的第二状态的磁导率的铁磁区域; 至少一个与所述至少一个铁磁区域可操作地相关联的激光器，其选择性地向所述铁磁区域提供热量以改变其p透过率; 以及可操作地连接到所述至少一个激光器并且适于连接到电流源的多个连接器，所述电流源提供使所述激光器将所述至少一个铁磁区域从第一状态改变到第二状态的电流。 可选地，存储器被布置为存储器单元的阵列。 可选地，每个单元具有与其可操作地相关联的磁场传感器。 可选地，非易失性存储器是辐射硬的。 另外，通过加热至少一个铁磁区域来改变其磁导率来记录数据的方法。