公开(公告)号：US09761785B2

公开(公告)日：2017-09-12

申请号：US14219028

申请日：2014-03-19

Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I

Inventor： Glen R Fox ,  Ronald G. Polcawich ,  Daniel M Potrepka ,  Luz M Sanchez

IPC: H01L41/08 ,  H01L41/319 ,  H01L41/187 ,  H01L41/316 ,  C30B29/32 ,  C30B23/02 ,  C30B25/18 ,  C23C18/12

CPC classification number: H01L41/081 ,  C23C18/1216 ,  C23C18/1291 ,  C23C18/1295 ,  C30B23/025 ,  C30B25/183 ,  C30B29/32 ,  H01L41/0815 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/316 ,  H01L41/318 ,  H01L41/319

Abstract: A ferroelectric device comprising a substrate;a textured layer; a first electrode comprising a thin layer of metallic material having a crystal lattice structure divided into granular regions; a seed layer; the seed layer being epitaxially deposited so as to form a column-like structure on top of the granular regions of the first electrode; at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the seed layer; the ferroelectric material layer, the seed layer, and first electrode each having granular regions in which column-like structures produce a high degree of polarization normal to the growth plane and a method of making.