公开(公告)号：US20160276215A1

公开(公告)日：2016-09-22

申请号：US14660967

申请日：2015-03-18

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： PEI-TING LEE ,  GUO-WEI CHEN ,  CHUN-LING LIN ,  CHI-MAO HSU ,  CHING-WEI HSU ,  HUEI-RU TSAI ,  JIA-RONG LI ,  SHANG NAN CHOU ,  PO CHIH WU

IPC: H01L21/768

CPC classification number: H01L21/76862 ,  C23C16/0245 ,  C23C16/045 ,  C23C16/18 ,  C23C28/023 ,  H01L21/28556 ,  H01L21/76849

Abstract: A method for manufacturing a semiconductor device is provided. The method comprises steps as follows. At least one trench is provided in a low-k dielectric layer on a substrate. The trench is filled with a copper (Cu) film. Pure cobalt (Co) is deposited on a surface of the Cu film by introducing a flow of a carrier gas carrying a Co-containing precursor and a reducing agent onto the surface of the Cu film. The flowrate of the flow is within a range from 5 to 19 sccm.

Abstract translation: 提供一种制造半导体器件的方法。 该方法包括以下步骤。 在衬底上的低k电介质层中提供至少一个沟槽。 沟槽填充有铜（Cu）膜。 通过将携带Co的前体和还原剂的载气流引入到Cu膜的表面上，在Cu膜的表面上沉积纯钴（Co）。 流量的流量在5至19sccm的范围内。