公开(公告)号：US20160093712A1

公开(公告)日：2016-03-31

申请号：US14515514

申请日：2014-10-16

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： SHIH-CHANG TSAI ,  TZU-CHIN TSENG ,  HSIAO-TING LIN ,  CHANG-YIH CHEN ,  SAM LAI

IPC: H01L29/51 ,  H01L29/423 ,  H01L21/02 ,  H01L21/321 ,  H01L21/768 ,  H01L29/49 ,  H01L21/28

CPC classification number: H01L29/511 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02244 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28158 ,  H01L21/3212 ,  H01L21/76897 ,  H01L21/823814 ,  H01L21/823828 ,  H01L29/42364 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

Abstract: A semiconductor device and a method for manufacturing the same. The method includes steps hereinafter. A substrate is provided with a first dielectric layer thereon. The first dielectric layer is provided with a trench. Then, a metal layer is formed to fill the trench and to cover the surface of the first dielectric layer. The metal layer is partially removed so that a remaining portion of the metal layer covers the first dielectric layer. A treatment process is performed to transform the remaining portion of the metal layer into a passivation layer on the top portion and a gate metal layer on the bottom portion. A chemical-mechanical polishing process is performed until the first dielectric layer is exposed so that a remaining portion of the passivation layer remains in the trench.

Abstract translation: 半导体器件及其制造方法。 该方法包括以下步骤。 衬底上设置有第一介电层。 第一电介质层设置有沟槽。 然后，形成金属层以填充沟槽并覆盖第一电介质层的表面。 金属层被部分去除，使得金属层的剩余部分覆盖第一介电层。 执行处理工艺以将金属层的剩余部分转变成顶部上的钝化层和底部上的栅极金属层。 执行化学 - 机械抛光工艺，直到暴露第一​​介电层，使得钝化层的剩余部分保留在沟槽中。