公开(公告)号：US09660086B2

公开(公告)日：2017-05-23

申请号：US15156363

申请日：2016-05-17

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Chun-Yu Chen ,  Chung-Ting Huang ,  Ming-Hua Chang ,  Tien-Chen Chan ,  Yen-Hsing Chen ,  Hsin-Chang Wu

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/16 ,  H01L29/49 ,  H01L29/51 ,  H01L21/265 ,  H01L29/165

CPC classification number: H01L29/785 ,  H01L21/26506 ,  H01L29/1604 ,  H01L29/165 ,  H01L29/4916 ,  H01L29/512 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

Abstract: The present invention provides a fin-shaped field effect transistor (FinFET), comprises: a substrate having a fin structure; a plurality trenches formed on the fin structure with an alloy grown in the trenches; a gate structure on the fin structure perpendicular to an extending direction of the fin structure in-between the plurality of trenches; and an amorphous layer on a surface of the fin structure exposed by the gate structure and disposed in-between the gate structure and the alloy. The invention also provides a manufacturing method of a fin-shaped field effect transistor (FinFET).

公开(公告)号：US09373705B1

公开(公告)日：2016-06-21

申请号：US14826218

申请日：2015-08-14

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Chun-Yu Chen ,  Chung-Ting Huang ,  Ming-Hua Chang ,  Tien-Chen Chan ,  Yen-Hsing Chen ,  Hsin-Chang Wu

IPC: H01L29/66 ,  H01L21/265 ,  H01L29/49 ,  H01L29/78 ,  H01L29/165

CPC classification number: H01L29/785 ,  H01L21/26506 ,  H01L29/1604 ,  H01L29/165 ,  H01L29/4916 ,  H01L29/512 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

Abstract: The present invention provides a manufacturing method of a fin-shaped field effect transistor (FinFET), comprises the following steps. Firstly, providing a substrate having a fin structure; forming a gate structure on the fin structure perpendicular to a extending direction of the fin structure; performing an amorphous implantation to form an amorphous layer on a exposed portion of the fin structure exposed by the gate structure and a light-doping implantation; forming a sacrificial spacer on sides of the gate structure covering a portion of the amorphous layer on the fin structure; forming a trench on the fin structure adjacent to the sacrificial spacer; growing an alloy in the trench; and then removing the sacrificial spacer. The invention also provides a FinFET device thereof.

Abstract translation: 本发明提供一种鳍状场效应晶体管（FinFET）的制造方法，包括以下步骤。 首先，提供具有翅片结构的基板; 在翅片结构上垂直于翼片结构的延伸方向形成栅极结构; 执行无定形注入以在由栅极结构暴露的鳍结构的暴露部分和掺杂注入物上形成非晶层; 在覆盖鳍片结构上的非晶层的一部分的栅极结构的侧面上形成牺牲隔离物; 在与所述牺牲隔离物相邻的翅片结构上形成沟槽; 在沟槽中生长合金; 然后去除牺牲隔离物。 本发明还提供了一种FinFET器件。