公开(公告)号：US20160260820A1

公开(公告)日：2016-09-08

申请号：US15156351

申请日：2016-05-17

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： JHEN-CYUAN LI ,  SHUI-YEN LU ,  MAN-LING LU ,  YU-CHENG TUNG ,  CHUNG-FU CHANG

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/311 ,  H01L21/306 ,  H01L21/3065 ,  H01L27/088 ,  H01L29/165

CPC classification number: H01L29/66795 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/3065 ,  H01L21/3083 ,  H01L21/823425 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/165 ,  H01L29/7848

Abstract: An etching method adapted to forming grooves in Si-substrate and FinFET transistor manufactured thereof are provided. The etching method includes providing a silicon substrate, at least two gate structures formed on the silicon substrate and at least two gate spacer structures disposed on the silicon substrate; performing a first etching process on the silicon substrate to form a first groove, which has a base and two inclined sidewalls, ascending to respective bottoms of the gate structures, and are interconnected with the base, respectively; and performing a second etching process on the silicon substrate at the base of the first groove, so as to form a second groove in a trench shape, wherein the two inclined sidewalls of the first groove are interconnected with the second groove respectively, and the first etching process is substantially different from the second etching process.

Abstract translation: 提供一种适于在Si衬底中形成凹槽的蚀刻方法和由其制造的FinFET晶体管。 蚀刻方法包括提供硅衬底，形成在硅衬底上的至少两个栅极结构和设置在硅衬底上的至少两个栅极间隔结构; 在硅衬底上执行第一蚀刻工艺以形成第一凹槽，其具有基部和两个倾斜侧壁，分别上升到栅极结构的各个底部，并分别与基底互连; 以及在所述第一凹槽的所述基底处对所述硅衬底进行第二蚀刻处理，以形成沟槽形状的第二凹槽，其中所述第一凹槽的两个倾斜侧壁分别与所述第二凹槽互连，并且所述第一凹槽 蚀刻工艺与第二蚀刻工艺基本不同。

公开(公告)号：US20160093737A1

公开(公告)日：2016-03-31

申请号：US14548239

申请日：2014-11-19

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： JHEN-CYUAN LI ,  SHUI-YEN LU ,  MAN-LING LU ,  YU-CHENG TUNG ,  CHUNG-FU CHANG

IPC: H01L29/78 ,  H01L29/161 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/311 ,  H01L27/088 ,  H01L29/165 ,  H01L21/306

CPC classification number: H01L29/7848 ,  H01L21/02118 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3083 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823425 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7851

Abstract: An etching method adapted to forming grooves in Si-substrate and FinFET transistor manufactured thereof are provided. The etching method includes providing a silicon substrate, at least two gate structures formed on the silicon substrate and at least two gate spacer structures disposed on the silicon substrate; performing a first etching process on the silicon substrate to form a first groove, which has a base and two inclined sidewalls, ascending to respective bottoms of the gate structures, and are interconnected with the base, respectively; and performing a second etching process on the silicon substrate at the base of the first groove, so as to form a second groove in an inverted -symbol shape, wherein the two inclined sidewalls of the first groove are interconnected with the second groove respectively, and the first etching process is substantially different from the second etching process.

Abstract translation: 提供一种适于在Si衬底中形成凹槽的蚀刻方法和由其制造的FinFET晶体管。 蚀刻方法包括提供硅衬底，形成在硅衬底上的至少两个栅极结构和设置在硅衬底上的至少两个栅极间隔结构; 在硅衬底上执行第一蚀刻工艺以形成第一凹槽，其具有基部和两个倾斜侧壁，分别上升到栅极结构的各个底部，并分别与基底互连; 以及在所述第一槽的底部对所述硅基板进行第二蚀刻处理，以形成倒立符形状的第二槽，其中所述第一槽的两个倾斜侧壁分别与所述第二槽互连，以及 第一蚀刻工艺与第二蚀刻工艺基本不同。